Abstract: A method for fabricating an array substrate motherboard, an array substrate motherboard and a detection method are provided. The method for fabricating an array substrate motherboard includes depositing a first film on a substrate, wherein a first gap is present between the edge of the first film and the edge of the substrate, coating photoresist on the substrate on which the first film is deposited, and exposing and developing the photoresist to form a first scale pattern from the photoresist. One end of the first scale pattern is flush with the edge of the substrate and the other end covers the first film.

Abstract: An array substrate includes a base substrate and a metal wiring layer located on the base substrate, where the metal wiring layer includes a first molybdenum oxide substrate layer and a first metal layer on the first molybdenum oxide substrate layer.

Abstract: The present disclosure provides a display substrate and a method for manufacturing the same, a display panel and a display device. The display substrate includes a base substrate; and a composite film structure formed on the base substrate and composed of at least two thin films having different refractive indexes, wherein the composite film structure is capable of absorbing light with a wavelength in a predetermined wavelength range, and the predetermined wavelength range is located between two adjacent peaks of visible light waves.

Abstract: An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.

Abstract: Disclosed are a manufacturing method of a phase shift mask and a phase shift mask. The manufacturing method of a phase shift mask includes: forming a pattern of metal shielding layer on a base substrate; forming a phase shift layer and a first photoresist layer in sequence on the pattern of metal shielding layer; patterning the first photoresist layer with the pattern of metal shielding layer serving as a mask to form a pattern of first photoresist layer; and etching the phase shift layer with the pattern of first photoresist layer serving as a mask to form a pattern of phase shift layer.

Abstract: An array substrate includes a pixel circuit and a light-emitting diode. The pixel circuit includes a driving transistor including a first active medium made of polysilicon, and a switching transistor including a second active medium made of polysilicon. The first active medium has a first grain size. The second active medium has a second grain size larger than the first grain size. The light-emitting diode is coupled to the pixel circuit.

Abstract: There are provided a method of manufacturing a display substrate, a method of manufacturing a display device, and a display substrate. The method of manufacturing a display substrate comprises: providing a base substrate; forming a thin film transistor on the base substrate; forming a first conductive layer on the base substrate on which the thin film transistor is formed, the first conductive layer being electrically connected to a drain of the thin film transistor; forming a light-emitting material block; and transferring the light-emitting material block to a surface of the first conductive layer.

Abstract: The present disclosure relates to a metal electrode, an array substrate and a method of producing the same, and a display device. In an embodiment, the method includes: forming a protection layer on a metal layer; patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.

Abstract: An array substrate includes a base substrate, a plurality of signal lines disposed at a side of the base substrate, and an organic layer disposed at a side of the plurality of signal lines facing away from the base substrate. The organic layer includes at least one auxiliary portion and a reference portion surrounding the at least one auxiliary portion, and a thickness of each auxiliary portion is less than a thickness of the reference portion.

Abstract: The present disclosure provides a shift register unit, a gate scanning circuit, a driving method, and a display apparatus.

Abstract: The present invention provides an array substrate comprising a substrate, a metal conductive film layer, and an anti-reflective film layer located between the substrate and the metal conductive film layer, and a method for manufacturing the same, as well as a display device. The method comprises step S1: forming an anti-reflective film layer on a substrate by adjusting the reaction power and/or reactive gas flow during the formation of film by the chemical vapor deposition process; and step S2: forming a metal conductive film layer on the substrate finished in step S1. Through the preparation method of the array substrate, the anti-reflective film layer can have a sand-like granulation structure, such that light reflected from the metal conductive film layer can be blocked, thereby weakening or avoiding the light reflected from the surface of the metal conductive film layer, further improving the display effect of the array substrate.

Abstract: An array substrate motherboard, a manufacturing method thereof and a display device are provided. The manufacturing method includes forming a film layer pattern for a first display product at a first region of a base substrate and forming a film layer pattern for a second display product at a second region of the base substrate. The first display product has deep holes at a density larger than the second display product, and each deep hole is a via-hole penetrating through at least two insulation layers. Specifically, the manufacturing method include: prior to forming a second conductive pattern on an insulation layer, reducing a thickness of the insulation layer at the first region; and forming the second conductive pattern on the insulation layer, and enabling the second conductive pattern to be connected to a first conductive pattern under the insulation layer through a via-hole structure penetrating through the insulation layer.

Abstract: A method for fabricating an array substrate motherboard, an array substrate motherboard and a detection method are provided. The method for fabricating an array substrate motherboard includes depositing a first film on a substrate, wherein a first gap is present between the edge of the first film and the edge of the substrate, coating photoresist on the substrate on which the first film is deposited, and exposing and developing the photoresist to form a first scale pattern from the photoresist. One end of the first scale pattern is flush with the edge of the substrate and the other end covers the first film.

Abstract: The present disclosure provides a shift register unit, a gate scanning circuit, a driving method, and a display apparatus.

Abstract: An array substrate, a display device, and a method for manufacturing the array substrate are disclosed. The array substrate includes a base substrate and a pixel array structure disposed on the base substrate, the pixel array structure includes at least one light shielding layer made of a light shielding material, and the light shielding material can prevent light leakage or light reflection, thereby increasing an opening ratio of the display device.

Abstract: Embodiments of the present invention relate to a thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device. The TFT includes an active layer, an amorphous silicon (a-Si) connecting layer and a source-drain electrode layer. The active layer includes a channel region, a source region and a drain region; forming materials of the channel region include polycrystalline silicon (poly-Si); the a-Si connecting layer is disposed on a side of the active layer and includes a first connecting part and a second connecting part which are spaced from each other; the source-drain electrode layer includes a source electrode and a drain electrode which are spaced to each other; the source electrode is electrically connected with the source region through the first connecting part; and the drain electrode is electrically connected with the drain electrode through the second connecting part.

Abstract: This present disclosure provides an array substrate, a manufacturing method thereof, and a display apparatus, aiming at solving the issue of light reflection on the array substrates and improving the display effects of display apparatuses. The array substrate includes a transparent substrate; a plurality of components disposed on a first side of the transparent substrate; and a shielding pattern, disposed on a second side of the transparent substrate, and configured to shield light reflected from a surface of at least one of the plurality of components.

Abstract: Disclosed are a mask, a display substrate and a display device. The mask comprises a substrate, a first exposure structure, a second exposure structure located at one side of the substrate and disposed opposite to each other, the first exposure structure comprises a first light transmission film layer and a first light shielding film layer, an orthographic projection of the first light shielding film layer falls within an orthographic projection of the first light transmission film layer on the substrate; the second exposure structure comprises a second light transmission film layer and a second light shielding film layer, an orthographic projection of the second light shielding film layer falls within an orthographic projection of the second light transmission film layer on the substrate; a side edge of the first exposure structure has a first zigzag structure, and a side edge of the second exposure structure has a second zigzag structure.

Abstract: A method of manufacturing a thin-film transistor (TFT) array substrate, including: forming a gate layer, a gate insulating layer, an oxide semiconductor layer, a source/drain electrode layer and a pixel electrode layer on a base substrate. The step of forming the source/drain electrode layer and the pixel electrode layer includes: forming a transparent conductive film and a first metallic film on the oxide semiconductor layer in sequence, to form a stack layer of the transparent conductive film and the first metallic film, in which the transparent conductive film contacts the oxide semiconductor layer; and forming source electrodes, drain electrodes and pixel electrodes by a single patterning process on the stack layer of the transparent conductive film and the first metallic film. One patterning process is saved, the production time is shortened, and the production cost is reduced.

Abstract: There are provided a method of manufacturing a display substrate, a method of manufacturing a display device, and a display substrate. The method of manufacturing a display substrate comprises: providing a base substrate; forming a thin film transistor on the base substrate; forming a first conductive layer on the base substrate on which the thin film transistor is formed, the first conductive layer being electrically connected to a drain of the thin film transistor; forming a light-emitting material block; and transferring the light-emitting material block to a surface of the first conductive layer.