Abstract: A circuit includes a first node, a first inverter connected to the first node and a second node. A variable resistive element is connected to the second node and a third node. A first switch is connected to the second node, a first capacitive element is connected in series with the first switch and the third node, a second switch connected to the second node, a second capacitive element is connected in series with the second switch and the third node, and a second inverter is connected to the third node and a fourth node.

Abstract: A circuit includes a first node, a first inverter connected to the first node and a second node. A variable resistive element is connected to the second node and a third node. A first switch is connected to the second node, a first capacitive element is connected in series with the first switch and the third node, a second switch connected to the second node, a second capacitive element is connected in series with the second switch and the third node, and a second inverter is connected to the third node and a fourth node.

Abstract: A circuit includes a first node, a first inverter connected to the first node and a second node. A variable resistive element is connected to the second node and a third node. A first switch is connected to the second node, a first capacitive element is connected in series with the first switch and the third node, a second switch connected to the second node, a second capacitive element is connected in series with the second switch and the third node, and a second inverter is connected to the third node and a fourth node.

Abstract: A tunnel field effect transistor (TFET) including a first doped source region for a first type TFET or a second doped source region for a second type TFET; a second doped drain region for the first type TFET or a first doped drain region for the second type TFET; a body region that is either intrinsic or doped, with a doping concentration less than that of the first or second source region, separating the first or second source from the first or second drain regions; a self-aligned etch cavity separating the first or second doped source and drain regions; a thin epitaxial channel region that is grown within the self-aligned etch cavity, covering at least the first or the second source region; a replacement gate stack comprising a high-k gate dielectric and one or a combination of metals and polysilicon; and sidewall spacers adjacent to the replacement gate stack.

Abstract: A method of manufacturing a tunnel field effect transistor (TFET) includes forming on a substrate covered by an epitaxially grown source material a dummy gate stack surrounded by sidewall spacers; forming doped source and drain regions followed by forming an inter-layer dielectric surrounding the sidewall spacers; removing the dummy gate stack, etching a self-aligned cavity; epitaxially growing a thin channel region within the self-aligned etch cavity; conformally depositing gate dielectric and metal gate materials within the self-aligned etch cavity; and planarizing the top surface of the replacement metal gate stack to remove the residues of the gate dielectric and metal gate materials.

Abstract: Embodiments relate to peaking inductor array for a peaking control unit of a transceiver. An aspect includes the peaking inductor array comprising a plurality of cells connected in parallel, each cell comprising a respective active inductor. Another aspect includes each of the plurality of cells further comprising a decoupling capacitor.

Abstract: A method for controlling a semiconductor circuit, including forming an inductor and a capacitor on a substrate, which are inductively coupled to one another. The inductor has an inductance value while the capacitor has a capacitance value. The inductor and capacitor make up an oscillator circuit with two terminals. Eddy currents are generated through the capacitor when an operating current flows along the inductor. These eddy currents influence, by inductive coupling, the inductance value and performance of the oscillator circuit, thus simultaneously tuning the inductance and capacitance of the oscillator circuit.

Abstract: A method for controlling a semiconductor circuit, including forming an inductor and a capacitor on a substrate, which are inductively coupled to one another. The inductor has an inductance value while the capacitor has a capacitance value. The inductor and capacitor make up an oscillator circuit with two terminals. Eddy currents are generated through the capacitor when an operating current flows along the inductor. These eddy currents influence, by inductive coupling, the inductance value and performance of the oscillator circuit, thus simultaneously tuning the inductance and capacitance of the oscillator circuit.

Abstract: Embodiments relate to peaking inductor array for a peaking control unit of a transceiver. An aspect includes the peaking inductor array comprising a plurality of cells connected in parallel, each cell comprising a respective active inductor. Another aspect includes each of the plurality of cells further comprising a decoupling capacitor.

Abstract: Embodiments relate to peaking inductor array for a peaking control unit of a transceiver. An aspect includes the peaking inductor array comprising a plurality of cells connected in parallel, each cell comprising a respective active inductor. Another aspect includes each of the plurality of cells further comprising a decoupling capacitor.

Abstract: A circuit includes a first node, a first inverter connected to the first node and a second node. A variable resistive element is connected to the second node and a third node. A first switch is connected to the second node, a first capacitive element is connected in series with the first switch and the third node, a second switch connected to the second node, a second capacitive element is connected in series with the second switch and the third node, and a second inverter is connected to the third node and a fourth node.

Abstract: A circuit includes a first node, a first inverter connected to the first node and a second node. A variable resistive element is connected to the second node and a third node. A first switch is connected to the second node, a first capacitive element is connected in series with the first switch and the third node, a second switch connected to the second node, a second capacitive element is connected in series with the second switch and the third node, and a second inverter is connected to the third node and a fourth node.

Abstract: A circuit includes a first node, a first inverter connected to the first node and a second node. A variable resistive element is connected to the second node and a third node. A first switch is connected to the second node, a first capacitive element is connected in series with the first switch and the third node, a second switch connected to the second node, a second capacitive element is connected in series with the second switch and the third node, and a second inverter is connected to the third node and a fourth node.

Abstract: Embodiments relate to peaking inductor array for a peaking control unit of a transceiver. An aspect includes the peaking inductor array comprising a plurality of cells connected in parallel, each cell comprising a respective active inductor. Another aspect includes each of the plurality of cells further comprising a decoupling capacitor.

Abstract: Embodiments relate to peaking inductor array for a peaking control unit of a transceiver. An aspect includes the peaking inductor array comprising a plurality of cells connected in parallel, each cell comprising a respective active inductor. Another aspect includes each of the plurality of cells further comprising a decoupling capacitor.

Abstract: Embodiments relate to peaking inductor array for a peaking control unit of a transceiver. An aspect includes the peaking inductor array comprising a plurality of cells connected in parallel, each cell comprising a respective active inductor. Another aspect includes each of the plurality of cells further comprising a decoupling capacitor.

Abstract: A first pair of resistors formed in a first layer of material, and a second pair of resistors formed in the first layer or in a second layer can be wired into a Wheatstone bridge to form a temperature sensor. Either layer can include a semiconductor or a dielectric. In a semiconductor layer, a pair of resistors can be doped areas of the layer, while in a dielectric, a pair of resistors can be material deposited in cavities in the layer, such as material from an added “middle-of-line” (MOL) metallization layer.

Abstract: A circuit includes a first node, a first inverter connected to the first node and a second node. A variable resistive element is connected to the second node and a third node. A first switch is connected to the second node, a first capacitive element is connected in series with the first switch and the third node, a second switch connected to the second node, a second capacitive element is connected in series with the second switch and the third node, and a second inverter is connected to the third node and a fourth node.

Abstract: A circuit includes a first node, a first inverter connected to the first node and a second node. A variable resistive element is connected to the second node and a third node. A first switch is connected to the second node, a first capacitive element is connected in series with the first switch and the third node, a second switch connected to the second node, a second capacitive element is connected in series with the second switch and the third node, and a second inverter is connected to the third node and a fourth node.

Abstract: Embodiments relate to peaking inductor array for a peaking control unit of a transceiver. An aspect includes the peaking inductor array comprising a plurality of cells connected in parallel, each cell comprising a respective active inductor. Another aspect includes each of the plurality of cells further comprising a decoupling capacitor.