Abstract: A method for identifying actions of an electric equipment is provided. The method includes: measuring a utility power signal of the electric equipment during a period of time; analyzing a waveform characteristic of the utility power signal in the period of time to acquire a set of characteristic values, and identifying a current control procedure corresponding to the utility power signal from a set of control procedures according to the set of characteristic values, the current control procedure including one or more action stages whose first action stage corresponds to a first action parameter; determining whether a deviation between the waveform characteristic of the utility power signal corresponding to the first action stage and the first action parameter is within a tolerance range; triggering a warning event when the deviation between the waveform characteristic of the utility power signal and the first action parameter is outside the tolerance range.

Abstract: A brewing quality measuring device including an electronic scale, a thermometer, a position maintaining device and an operating/control unit is provided. The electronic scale includes a platform used for placing a container having a brew therein. The thermometer has a measuring portion. The position maintaining device is used for holding the measuring portion of the thermometer at a measuring position. The operating/control unit is used for receiving measuring signals from each of the electronic scale and the thermometer. The measuring position corresponds to a specific position of the container when the container is placed on the platform, so that the thermometer measures the temperature of the brew at the measuring position.

Abstract: A method for identifying actions of an electric equipment is provided. The method includes: measuring a utility power signal of the electric equipment during a period of time; analyzing a waveform characteristic of the utility power signal in the period of time to acquire a set of characteristic values, and identifying a current control procedure corresponding to the utility power signal from a set of control procedures according to the set of characteristic values, the current control procedure including one or more action stages whose first action stage corresponds to a first action parameter; determining whether a deviation between the waveform characteristic of the utility power signal corresponding to the first action stage and the first action parameter is within a tolerance range; triggering a warring event when the deviation between the waveform characteristic of the utility power signal and the first action parameter is outside the tolerance range.

Abstract: A computer system and a method for adaptive thermal resistance-capacitance (RC) network analysis of a semiconductor device for use in a portable device are provided. The method includes the steps of: receiving a device input file and a plurality of specific effective heat transfer coefficients (HTCs) associated with the portable device; repeatedly performing a thermal analysis of the portable device based on the device input file and a current effective HTC to estimate a target die temperature of the semiconductor device; calculating a target effective HTC based on the device input file and the target die temperature; and updating the current effective HTC with the target effective HTC; and generating an output file recording the target die temperature of the semiconductor device.

Abstract: A fault detection system comprises a data server configured to collect parameters incoming from at least one apparatus, at least one fault-sensing module configured to generate an alarm signal if the parameter exceeds a predetermined specification, a monitoring module configured to restart the fault-sensing module if the fault-sensing module operates abnormally, and a remote controller configured to control the data server, the fault-sensing module, and the monitoring module.

Abstract: A method for managing application programs includes: monitoring whether there is at least an application program which is unresponsive in a plurality of started application programs; and automatically restarting the application program which is unresponsive, and averagely allocating a system resource for the plurality of application programs according to a number of the plurality of application programs.

Abstract: A data collector control system for semiconductor manufacturing comprises a data collector and a automatic communication port switch control circuit. The control system is placed between an equipment and an equipment automation programming (EAP) system. The data collector processes and transmits communication messages between the equipment and the EAP system while the data collector operates normally. The communication messages between the equipment and the EAP system are transmitted through the control circuit instead of the data collector while the data collector operates abnormally.

Abstract: A dynamic fault detection method comprises the steps of acquiring a data curve from a machine, performing a waveform-recognition process to check if the data curve includes an effective waveform, performing a data-diagnosing process to check if the value of the effective waveform in an effective region falls outside a predetermined range, and generating an alarm signal if the value of the effective waveform in the effective region falls outside the predetermined range. The waveform-recognition process comprises the steps of checking if the data curve includes a first segment, a second segment and a third segment sandwiched between the first segment and the second segment, and checking if the length of the third segment is larger than a predetermined value. The waveform is determined to include the effective waveform if the checking results are true.

Abstract: A system for detecting a plasma reaction and a method for using the same are provided. When the plasma reaction changes its reaction power, a lightness variation accompanies the power change. The system comprises a sensing device with a resistance that the resistance of the sensing device will be changed in response to the lightness variation; thereby the system can detect the status of the plasma reaction.

Abstract: A run-to-run control system and a run-to-run controlling method are proposed. The tool process parameters are real-time collected during the semiconductor process is performed and are regarded as the effective factors in the process for providing an optimal operation variables to the tool for the next process run. After modeling the metrology parameters with a set of the tool process parameters with respect to the semiconductor process for its corresponding process run, a set of optimal operation variables is determined by the controller and output to the tool to modify the process recipe of the process. Hence, the process recipe is real-time changed with the process environment to obtain the optimal process performance.

Abstract: A run-to-run control system and a run-to-run controlling method are proposed. The tool process parameters are real-time collected during the semiconductor process is performed and are regarded as the effective factors in the process for providing an optimal operation variables to the tool for the next process run. After modeling the metrology parameters with a set of the tool process parameters with respect to the semiconductor process for its corresponding process run, a set of optimal operation variables is determined by the controller and output to the tool to modify the process recipe of the process. Hence, the process recipe is real-time changed with the process environment to obtain the optimal process performance.

Abstract: An operating method for a fault detection of a semiconductor process and a diagnostic system for fault detection in a semiconductor process are described. By using the method and the diagnostic system, the real-time process parameters collected during the process is performed by the tool become meaningful and are correlated with the historic process performance data obtained by the post process metrology process. Moreover, the method and the diagnostic system further provide an alarm index for the process performed on the tool to actually reflect the process environment during the process is performed after correlating the real-time process parameters and the historic process performance data. With referring to the alarm index, the current process performance under the real-time process parameters in the tool can be accurately diagnosed.

Abstract: A new computer based method is provided for the evaluation of dielectric film properties. These properties are for a given dielectric derived from measurements of the chemical bonding of that dielectric. Previously collected reference data are maintained in a reference data base from where data are extracted and used as input to mathematical modeling software that predicts thin film properties. The output of these prediction algorithms is used, together with chemical bonding measurements of the dielectric that is being investigated, as input to a program that computers the dielectric properties of the dielectric.

Abstract: The present invention provides a method for signal vibration alert. The method of the present invention recognizes significant substantial swerves and corresponding substantial edge-to-edge differences by eliminating the adverse effect of noise among signals generated by an apparatus. When the frequency of the substantial edge-to-edge differences that exceed an acceptable range of the frequency limit is too large, the method of the present invention automatically generates an alert to indicate aberration in the apparatus such that the monitoring staff is informed and allowed to take necessary measures responding to the aberration.

Abstract: A method and system for in-line monitoring process performance during wafer fabrication. First signals generated by a fabrication tool are collected and filtered to exclude abnormal signals while a model wafer is processed. The filtered first signals are regulated and normalized to generate model wafer data. After the fabrication process is completed, the model wafer is measured to generate a measured value representing the process quality thereof. The model wafer data and the measured value of the model wafer are used to build a correlation model by a correlation unit. Second signals generated by the fabrication tool are collected when a run wafer is processed, and then filtered to exclude abnormal signals. The filtered second signals are regulated and normalized to generate run wafer data. A predicted value representing the process quality of the run wafer is generated by inputting the run wafer data into the correlation model.

Abstract: The present invention provides a method of tool matching for a semiconductor manufacturing process having a first and second path completed by serial combinations of tools for processing of wafers. The method comprises the steps of providing a target value, obtaining a first and second test result of the wafers processed through the first and second path respectively, calculating differences between the first and second test result and the target value to obtain a first and second estimate respectively, and selecting one of the first and second paths according to the estimates.

Abstract: A method and system for in-line monitoring process performance during wafer fabrication. First signals generated by a fabrication tool are collected and filtered to exclude abnormal signals while a model wafer is processed. The filtered first signals are regulated and normalized to generate model wafer data. After the fabrication process is completed, the model wafer is measured to generate a measured value representing the process quality thereof. The model wafer data and the measured value of the model wafer are used to build a correlation model by a correlation unit. Second signals generated by the fabrication tool are collected when a run wafer is processed, and then filtered to exclude abnormal signals. The filtered second signals are regulated and normalized to generate run wafer data. A predicted value representing the process quality of the run wafer is generated by inputting the run wafer data into the correlation model.

Abstract: The present invention provides a method of tool matching for a semiconductor manufacturing process having a first and second path completed by serial combinations of tools for processing of wafers. The method comprises the steps of providing a target value, obtaining a first and second test result of the wafers processed through the first and second path respectively, calculating differences between the first and second test result and the target value to obtain a first and second estimate respectively, and selecting one of the first and second paths according to the estimates.

Abstract: A deposition process for silicon oxycarbide films suitable for use as anti-reflection coatings is described. The, process is based on plasma enhanced CVD of silane mixed with methyl-silane, trimethyl-silane, or tetramethyl-silane (together with a carrier gas). Provided the relative gas flow rates are maintained within the ranges specified, films having excellent ARL properties are obtained, with photoresist patterns formed on said films being free of overhangs and footings.

Abstract: The invention provides a chemical-mechanical abrasive composition for semiconductor processing, which composition is characterized by comprising a water-soluble anionic chemical. According to the invention, said water-soluble anionic chemical would be coated on the surface of a metal film during the polishing of said metal film so as to inhibit the formation of depressions on the resultant metal circuits. In another aspect, the invention provides a chemical-mechanical abrasive composition in the form of a slurry comprising 70-99.5% by weight of an aqueous medium; 0.1-25% by weight of an abrasive particle; 0.01-2.0% by weight of an abrasion enhancer; and 0.01-1% by weight of a water-soluble anionic chemical. The chemical-mechanical abrasive composition of the invention may further comprise an oxidant to enhance the abrasion rate.