Abstract: A new method is provided to edge and bevel the periphery of a semiconductor substrate. The wafer is positioned in a horizontal plane and held in place against two positioning pegs. The wafer is rotated and slurry is distributed over the periphery of the substrate surface. The periphery of the wafer is entered into one or more abrasive fixtures, also referred to as bevel/edge heads. These abrasive fixtures will create the desired edge and the desired bevel around the periphery of the substrate.

Abstract: A method and apparatus are described for Chemical Mechanical Polishing of wafers which achieves a constant removal rate of material from the wafer over the entire surface of the wafer. The wafer is held in a wafer carrier rotating at a wafer carrier angular velocity and is polished using a platen rotating at a platen angular velocity. The pressure exerted on the wafer by the wafer carrier is the largest at the wafer edge and smallest at the center of the wafer. The wafer carrier is divided into a number of wafer carrier circular segments so that the temperature of each wafer carrier circular segment can be controlled. The platen is divided into a number of platen circular segments so that the temperature of each platen circular segment can be controlled. The temperatures of the wafer carrier circular segments and the platen circular segments are then adjusted to provide a removal rate of material from the wafer which is uniform across the surface of the wafer.