Abstract: The present invention relates to an arc processing method and device with simultaneous chemical etching wherein the device comprises a conductive electrode, being the cathode, an auxiliary electrode, being the anode, an conductive fluid, and an non-conductive work piece for processing. Processing, and precision processing in particular, of non-conductive materials is obtained by simultaneous arc discharge and etching that are brought about by chemical reactions associated with cathode and anode. Moreover, the present invention discloses simultaneous arc processing and chemical etching that offers improved processing efficiency over conventional arc processing.

Abstract: The present invention provides an integrated circuit with high-frequency signals immune from noises. The integrated circuit has a chip having a first pad and a plurality of second pads, wherein an AC signal and DC signals are transmitted through the first pad and the second pads respectively, a substrate having a first finger and a plurality of second fingers, a first conducting line connected between the first pad and finger respectively of the chip and substrate, and a plurality of second conducting lines connected between the second pads and fingers respectively of the chip and substrate, and surrounding the first conducting line.

Abstract: The present invention is to provide a kind of multilayer microstructure macrocapacitor, wherein on one side of an electrode substrate after it forms slots with an appropriate aspect ratio, sequentially forms a high dielectric layer and a conducting material layer to give a basic composition unit, laminates the conducting material layers of two groups of basic composition unit to form a monolayer microstructure macrocapacitor, and stacking laminates the plural groups of the monolayer microstructure macrocapacitor to obtain a multilayer microstructure macrocapacitor; on two sides of an electrode substrate it forms a basic composition unit of a microstructure macrocapacitor through the process described above, and laminates the plural groups of the monolayer microstructure macrocapacitor to obtain a multilayer microstructure macrocapacitor.

Abstract: The present invention is to provide a kind of a ductile grinding processing technique for the diamond material, wherein it comprises of: after giving a heat energy to heat the diamond material, there gives a force to the heated diamond material, and by giving a heat and a force it is able to proceed a ductile grinding processing technique for the diamond material; for the diamond film to proceed a ductile grinding processing technique comprises of: there gives a heat energy to heat the diamond film, and then grinds the heated diamond material with a grinding wheel, and by use of heating and grinding with a grinding wheel it is able to proceed a ductile grinding processing technique for the diamond material.

Abstract: A grid array packaged integrated circuit includes a substrate and a chip with a core circuit. The chip is disposed on the substrate. The chip includes I/O devices, bonding pad arranged on the chip in a multi-tier manner surrounding the I/O devices, metal traces and vias on metal layers of the chip for electrically connecting each I/O device and each bonding pad, rings and fingers surrounding the chip on the substrate, and bonding wires for electrically connecting each bonding pad to a corresponding finger or to a corresponding ring. Bonding pads electrically connected to different voltage levels can share the same I/O device.

Abstract: The present invention relates to an electrochemical discharge method and device with self-acting bubble layers, wherein the device comprises an electrode, being the cathode, capable of supplying self-acting bubble layers, an auxiliary electrode, being the anode, an conducting fluid, and an non-conductive work piece for processing. Processing, and precision processing in particular, of non-conductive materials is obtained by arc discharge caused by high voltage application and chemical reactions associated with cathode and anode.

Abstract: A conductive wiring layer structure, applied to the conductive wiring layer structure under bonding pads of a die. The die has a substrate and can be partitioned into a central core circuit and a peripheral bonding pad area. The conductive wire layer structure has a plurality of trapezium conductive wiring regions and a plurality of inverse trapezium conductive wiring regions alternately arranged in the bonding pad area. Each of the equilateral and inverse trapezium conductive wiring regions has a plurality of dielectric layers and a plurality of conductive wiring layers alternately overlaying each other on the substrate. The conductive wiring layers of the trapezium conductive wiring region are wider as approaching the substrate, and become narrower as distant away from the substrate. The conductive wiring layers of the inverse trapezium conductive wiring region are narrower as approaching the substrate, and wider as distant away from the substrate.

Abstract: The present invention relates to an arc processing method and device with simultaneous chemical etching wherein the device comprises a conductive electrode, being the cathode, an auxiliary electrode, being the anode, an conductive fluid, and an non-conductive work piece for processing. Processing, and precision processing in particular, of non-conductive materials is obtained by simultaneous arc discharge and etching that are brought about by chemical reactions associated with cathode and anode. Moreover, the present invention discloses simultaneous arc processing and chemical etching that offers improved processing efficiency over conventional arc processing.

Abstract: A process method of using excimer laser for forming micro spherical and non-spherical polymeric structure array includes a photomask which has a selected curved pattern formed thereon. The curved pattern has non-constant widths along a straight line direction. An excimer laser beam source is deployed to project through the photomask on a substrate coated with a polymeric material while the substrate is moving in a direction normal to the straight line direction for the polymeric material to receive laser beam projection with different time period. The polymeric material thus may be etched to different depth to form a three dimensional pattern desired. By projecting and etching the polymeric material two times at different directions or through different photomask patterns, a sphere like or non-sphere like surface of micro array structure may be obtained.

Abstract: The present invention relates to an electrochemical discharge method and device with self-acting bubble layers, wherein the device comprises an electrode, being the cathode, capable of supplying self-acting bubble layers, an auxiliary electrode, being the anode, an conducting fluid, and an non-conductive work piece for processing. Processing, and precision processing in particular, of non-conductive materials is obtained by arc discharge caused by high voltage application and chemical reactions associated with cathode and anode.

Abstract: A process method of using excimer laser for forming micro spherical and non-spherical polymeric structure array includes a photomask which has a selected curved pattern formed thereon. The curved pattern has non-constant widths along a straight line direction. An excimer laser beam source is deployed to project through the photomask on a substrate coated with a polymeric material while the substrate is moving in a direction normal to the straight line direction for the polymeric material to receive laser beam projection with different time period. The polymeric material thus may be etched to different depth to form a three dimensional pattern desired. By projecting and etching the polymeric material two times at different directions or through different photomask patterns, a sphere like or non-sphere like surface of micro array structure may be obtained.

Abstract: The invention discloses a micro-structure capacitor formed by joining the metal layer of a multi-porous micro-structure. A substrate is used as an etching stop layer when producing the capacitor. Therefore, pores with low aspect ratio and uniform size are formed on the surface of the substrate. The efficiency of the subsequent thin film coating process is increased. The porous three-dimensional structure increases the capacitance. Micro-structures are stacked up so the capacitor produced features small size and high capacitance.