Abstract: In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: An audio rendering method and an electronic device performing the same are disclosed. The disclosed audio rendering method includes determining an air absorption attenuation amount of an audio signal based on a recording distance included in metadata of the audio signal and a source distance between a sound source of the audio signal and a listener; and rendering the audio signal based on the air absorption attenuation amount.

Abstract: A rendering method of an object-based audio signal and an apparatus for performing the same are provided. The rendering method of an object-based audio signal includes obtaining a rendered audio signal, performing clipping prevention on the rendered audio signal using a first limiter, mixing a signal output by the first limiter using a mixer, and performing clipping prevention on the mixed signal using a second limiter.

Abstract: A method of rendering object-based audio and an electronic device performing the method are provided. The method includes identifying a bitstream, determining a reference distance of an object sound source based on the bitstream, determining a minimum distance for applying distance-dependent attenuation, based on the reference distance, and determining a gain of object-based audio included in the bitstream based on the reference distance and the minimum distance.

Abstract: The present disclosure relates to a portable printer including a main body in a portable form which is capable of accommodating a cartridge having a nozzle for delivering a printing material to a target having a soft or hard surface, a seating part which is provided to be exposed to an outside from a lower portion of the main body to face the surface of the target and at least partially surrounds the nozzle, a roller provided respectively at the front and rear of the nozzle at the lower portion of the main body with respect to a direction in which the main body moves along the surface of the target to deliver the printing material to the target, and a printing adjustment unit configured to adjust a height difference between the nozzle and the roller to adjust a height difference between the nozzle and the surface of the target.

Abstract: Disclosed is an apparatus and method for processing a multichannel audio signal. A multichannel audio signal processing method may include: generating an N-channel audio signal of N channels by down-mixing an M-channel audio signal of M channels; and generating a stereo audio signal by performing binaural rendering of the N-channel audio signal.

Abstract: The present invention relates to an immunogenic composition including multivalent pneumococcal polysaccharide-protein conjugates. Each conjugate includes capsular polysaccharides of different pneumococcus serotypes conjugated to a carrier protein. More concretely, the present invention is a multivalent immunogenic composition including polysaccharide-protein conjugates. Each of the polysaccharide-protein conjugates includes Streptococcus pneumoniae-derived capsular polysaccharides of different serotypes conjugated to a carrier protein. The capsular polysaccharides include a) capsular polysaccharides of one or more serotypes selected from the group consisting of serotypes 1, 3, 4, 5, 6A, 6B, 7F, 9V, 14, 18C, 19A, 19F, and 23F, and b) capsular polysaccharides of one or more serotypes selected from the group consisting of serotypes 10A, 11A, 12F, 15B, 22F, 23A, and 35B.

Abstract: In one example, an electronic device, comprises a substrate comprising a dielectric structure and a conductive structure, an electronic component over a top side of the substrate, wherein the electronic component is coupled with the conductive structure; an encapsulant over the top side of the substrate and contacting a lateral side of the electronic component, wherein the encapsulant comprises a first trench on a top side of the encapsulant adjacent to the electronic component, a lid over the top side of the encapsulant and covering the electronic component; and an interface material between the top side of the encapsulant and the lid, and in the first trench. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: An electrical connector assembly includes a housing defining an interior space and a slot and a spring pin terminal disposed within the slot of the housing. The spring pin terminal includes a first contact portion, a second contact portion, and an intermediate portion that extends between the first contact portion and the second contact portion. The first contact portion includes a contact point that engages a first electrically conductive structure and a retention force support that engages a portion of the intermediate portion of the spring pin terminal. The second contact portion includes a contact point that engages a second electrically conductive structure and a retention force and alignment support that engages the intermediate portion of the spring pin terminal.

Abstract: In one example, a semiconductor device, comprises a first redistribution layer (RDL) substrate comprising a first dielectric structure and a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers, an electronic component over the first RDL substrate, wherein the electronic component is coupled with the first conductive structure, a body over a top side of the first RDL substrate, wherein the electronic component is in the body, a second RDL substrate comprising a second dielectric structure over the body, and a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers, and an internal interconnect coupled between the first conductive structure and the second conductive structure. Other examples and related methods are also disclosed herein.

Abstract: An electrical connector assembly includes an electrically conductive structure having a flat flexible conductor with a plurality of end portions. Each of the plurality of end portions includes a plurality of electrically conductive traces. A plurality of wire contact wedges respectively support the plurality of end portions of the electrically conductive structure. A connector housing supports the plurality of wire contact wedges and the electrically conductive structure.

Abstract: A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

Abstract: In one example, a semiconductor device, comprises a first redistribution layer (RDL) substrate comprising a first dielectric structure and a first conductive structure through the first dielectric structure and comprising one or more first conductive redistribution layers, an electronic component over the first RDL substrate, wherein the electronic component is coupled with the first conductive structure, a body over a top side of the first RDL substrate, wherein the electronic component is in the body, a second RDL substrate comprising a second dielectric structure over the body, and a second conductive structure through the second dielectric structure and comprising one or more second conductive redistribution layers, and an internal interconnect coupled between the first conductive structure and the second conductive structure. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

Abstract: In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device includes a first substrate with a first substrate top side, a first substrate bottom side opposite to the first substrate top side, a first substrate lateral side interposed between the first substrate top side and the first substrate bottom side, and a first substrate conductive structure. An electronic component is coupled to the first substrate top side and coupled to the first substrate conductive structure. A support includes a support wall having a first ledge coupled to the first substrate top side, a first riser coupled to the first substrate lateral side, and a second ledge extending from the first riser away from the first substrate lateral side. Other examples and related methods are also disclosed herein.