Patents by Inventor Hyoung Soo Ko
Hyoung Soo Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11010532Abstract: A simulation method includes storing a plurality of structure parameters of transistors for a semiconductor chip, imaging generating a first local layout which includes a first structure parameter extracted from a semiconductor device included in the first local layout, the first structure parameter being an actual parameter determined using the imaging equipment, generating second to n-th local layouts by modifying the first structure parameter included in the first local layout, wherein the second to n-th local layouts respectively have second to n-th structure parameters modified from the first structure parameter, calculating first to n-th effective density factors (EDF) respectively for the first to n-th structure parameters, determining a first effective open silicon density for a first chip using the first to n-th effective density factors and a layout of the first chip, and calculating first to m-th epitaxy times for first to m-th effective open silicon densities.Type: GrantFiled: February 18, 2020Date of Patent: May 18, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Alexander Schmidt, Dong-Gwan Shin, Anthony Payet, Hyoung Soo Ko, Seok Hoon Kim, Hyun-Kwan Yu, Si Hyung Lee, In Kook Jang
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Publication number: 20200342157Abstract: A simulation method and system which can determine a predictable epitaxy time by accurately reflecting layout characteristics of a chip and characteristics of a source/drain formation process are provided.Type: ApplicationFiled: February 18, 2020Publication date: October 29, 2020Inventors: Alexander SCHMIDT, Dong-Gwan SHIN, Anthony PAYET, Hyoung Soo KO, Seok Hoon KIM, Hyun-Kwan YU, Si Hyung LEE, In Kook JANG
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Patent number: 9118856Abstract: An image sensor includes a unit pixel including a plurality of color pixels with a depth pixel. A first signal line group of first signal lines is used to supply first control signals that control operation of the plurality of color pixels, and a separate second signal line group of second signal lines is used to supply second control signals that control operation of the depth pixel.Type: GrantFiled: July 5, 2012Date of Patent: August 25, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Won Joo Kim, Hyoung Soo Ko, Doo Cheol Park, Hee Woo Park, Kwang-Min Lee, Ju Hwan Jung
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Patent number: 9103722Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.Type: GrantFiled: November 14, 2014Date of Patent: August 11, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyoung-Soo Ko, Shin-Wook Yi, Won-Joo Kim, Ju-Hwan Jung
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Patent number: 9029785Abstract: A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.Type: GrantFiled: February 29, 2012Date of Patent: May 12, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Doo Cheol Park, Seung Hyuk Chang, Myung-Sun Kim, Won Joo Kim, Ju Hwan Jung, Seung Hoon Lee, Kwang-Min Lee, Hyoung Soo Ko
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Publication number: 20150069244Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.Type: ApplicationFiled: November 14, 2014Publication date: March 12, 2015Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyoung-Soo KO, Shin-Wook YI, Won-Joo KIM, Ju-Hwan JUNG
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Patent number: 8920153Abstract: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.Type: GrantFiled: September 3, 2013Date of Patent: December 30, 2014Assignee: Seagate Technology LLCInventors: Hae-sung Kim, Hyoung-soo Ko, Seung-bum Hong, Jin-seung Sohn, Sung-hoon Choa, Chee-kheng Lim
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Patent number: 8901498Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.Type: GrantFiled: May 4, 2012Date of Patent: December 2, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyoung-Soo Ko, Shin-Wook Yi, Won-Joo Kim, Ju-Hwan Jung
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Patent number: 8785982Abstract: A unit pixel of a depth sensor including a light-intensity output circuit configured to output a pixel signal according to a control signal, the pixel signal corresponding to a first electric charge and a second electric charge, a first light-intensity extraction circuit configured to generate the first electric charge and transmit the first electric charge to the light-intensity output circuit, the first electric charge varying according to an amount of light reflected from a target object and a second light-intensity extraction circuit configured to generate the second electric charge and transmit the second electric charge to the light-intensity output circuit, the second electric charge varying according to the amount of reflected light. The light-intensity output circuit includes a first floating diffusion node. Accordingly, it is possible to minimize waste of a space, thereby manufacturing a small-sized pixel.Type: GrantFiled: September 13, 2012Date of Patent: July 22, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Woo Joo Kim, Hyoung Soo Ko, Yoon Dong Park, Jung Bin Yun
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Publication number: 20140004325Abstract: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.Type: ApplicationFiled: September 3, 2013Publication date: January 2, 2014Inventors: Hae-sung Kim, Hyoung-soo Ko, Seung-bum Hong, Jin-seung Sohn, Sung-hoon Choa, Chee-kheng Lim
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Patent number: 8523555Abstract: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.Type: GrantFiled: September 15, 2012Date of Patent: September 3, 2013Assignee: Seagate Technology LLCInventors: Hae-sung Kim, Hyoung-soo Ko, Seung-bum Hong, Jin-seung Sohn, Sung-hoon Choa, Chee-kheng Lim
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Publication number: 20130148097Abstract: A distance measuring sensor includes a substrate doped with a first impurity, first and second charge storage regions spaced apart from each other in the substrate and doped with a second impurity, a photoelectric conversion region doped with the second impurity between the first and the second charge storage regions and configured to receive light to generate charges, a first dielectric layer covering the first and second charge storage regions and the photoelectric conversion region, a second dielectric layer on the first dielectric layer, and first and second transfer gates spaced apart from each other on the first dielectric layer and between the first and second charge storage regions. Each of the first and second transfer gates may cover a portion of the second dielectric layer and may be configured to selectively transfer the charges generated in the photoelectric conversion region to the first and second charge storage regions.Type: ApplicationFiled: September 5, 2012Publication date: June 13, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-sung SHIN, Hyoung-soo KO, Shin-wook Yi
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Publication number: 20130119438Abstract: A unit pixel of a depth sensor including a light-intensity output circuit configured to output a pixel signal according to a control signal, the pixel signal corresponding to a first electric charge and a second electric charge, a first light-intensity extraction circuit configured to generate the first electric charge and transmit the first electric charge to the light-intensity output circuit, the first electric charge varying according to an amount of light reflected from a target object and a second light-intensity extraction circuit configured to generate the second electric charge and transmit the second electric charge to the light-intensity output circuit, the second electric charge varying according to the amount of reflected light. The light-intensity output circuit includes a first floating diffusion node. Accordingly, it is possible to minimize waste of a space, thereby manufacturing a small-sized pixel.Type: ApplicationFiled: September 13, 2012Publication date: May 16, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Woo Joo KIM, Hyoung Soo KO, Yoon Dong PARK, Jung Bin YUN
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Patent number: 8432001Abstract: Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.Type: GrantFiled: May 10, 2007Date of Patent: April 30, 2013Assignee: Seagate Technology LLCInventors: Ju-hwan Jung, Hyoung-soo Ko, Hong-sik Park, Yong-su Kim, Seung-bum Hong
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Publication number: 20130064918Abstract: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.Type: ApplicationFiled: September 15, 2012Publication date: March 14, 2013Applicant: SEAGATE TECHNOLOGY LLCInventors: Hae-sung Kim, Hyoung-soo Ko, Seung-bum Hong, Jin-seung Sohn, Sung-hoon Choa, Chee-kheng Lim
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Publication number: 20130010072Abstract: An image sensor includes a unit pixel including a plurality of color pixels with a depth pixel. A first signal line group of first signal lines is used to supply first control signals that control operation of the plurality of color pixels, and a separate second signal line group of second signal lines is used to supply second control signals that control operation of the depth pixel.Type: ApplicationFiled: July 5, 2012Publication date: January 10, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Won Joo Kim, Hyoung Soo Ko, Doo Cheol Park, Hee Woo Park, Kwang-Min Lee, Ju Hwan Jung
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Patent number: 8349527Abstract: A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.Type: GrantFiled: May 23, 2011Date of Patent: January 8, 2013Inventors: Hae-sung Kim, Hyoung-soo Ko, Seung-bum Hong, Jin-seung Sohn, Sung-hoon Choa, Chee-kheng Lim
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Publication number: 20120294137Abstract: An apparatus can include a read head formed in a semiconductor layer of an air bearing surface, the read head comprising a channel region formed between a source and drain which are doped to a higher conductivity than the channel region; wherein the channel region is configured to generate a charge carrier depletion region in response to a first ferroelectric dipole direction, and to accumulate charge carriers in response to a second ferroelectric dipole direction.Type: ApplicationFiled: July 25, 2012Publication date: November 22, 2012Applicant: SEAGATE TECHNNOLOGY INTERNATIONALInventors: Seung-bum HONG, Sung-hoon CHOA, Ju-hwan JUNG, Hyoung-soo KO, Yong Kwan KIM
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Publication number: 20120281206Abstract: A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction.Type: ApplicationFiled: May 4, 2012Publication date: November 8, 2012Inventors: Hyoung-Soo Ko, Shin-Wook Yi, Won-Joo Kim, Ju-Hwan Jung
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Patent number: 8304808Abstract: Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.Type: GrantFiled: May 15, 2008Date of Patent: November 6, 2012Assignee: Seagate Technology LLCInventors: Ju-hwan Jung, Hyoung-soo Ko, Seung-bum Hong