Abstract: Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.

Abstract: A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.

Abstract: Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

Abstract: An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

Abstract: An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head.

Abstract: A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.

Abstract: A data reading/writing head reading/writing data from/to a ferroelectric recording medium by using an electric field effect, includes a semiconductor body having a first plane on which an air bearing pattern is formed and a second plane crossing the first plane. A sensing unit is located on the second plane and reads data written to the ferroelectric recording medium, wherein the second plane is separated from the first plane, and a floating gate is disposed on the sensing unit, wherein an end of the floating gate extends to the first plane to guide an electric field from the ferroelectric recording medium to the sensing unit.

Abstract: An electric field effect read/write head for recording/reproducing information on/from a ferroelectric recording medium using an electric field effect includes a semiconductor substrate, a recess portion formed in an upper surface of the semiconductor substrate facing the ferroelectric recording medium, and a recording/reproduction portion provided in the recess portion.

Abstract: A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.

Abstract: A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

Abstract: An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.

Abstract: Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.

Abstract: A storage apparatus includes a ferroelectric recording medium, an electric field sensor including a source region, a drain region and a resistance region electrically connecting the source region to the drain region and having a resistance, which varies according to an intensity of an electric field due to a polarization voltage of an electric domain of the recording medium, a voltage applying unit applying a drain voltage between the source region and the drain region, and a reproducing signal detection unit including at least one negative resistor installed in an electric circuit connecting the drain region to the voltage applying unit, and detecting a change in a voltage between the drain region and the at least one negative resistor.

Abstract: An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.

Abstract: An electric field read/write head, a method of manufacturing the same, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a resistance region formed in a substrate which comprises an end surface facing a recording medium; a source and a drain formed in the substrate and disposed on both sides of the resistance region, respectively; and an insulating layer and a write electrode formed sequentially on the resistance region, wherein the length (l) to width (w) ratio (l/w) of the resistance region satisfies (l/w)?0.2.

Abstract: A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.

Abstract: Provided are an electric field read/write device and a method of driving an electric field read/write device. The method including an electric field read/write head comprising a resistance region disposed between a source region and a drain region and a writing electrode disposed on the resistance region, wherein the method includes: applying a controlling voltage to the writing electrode, wherein the controlling voltage is smaller than a threshold voltage which causes polarization of a recording medium, and reproducing data recorded in the recording medium according to change of an amount of a current flowing through the resistance region according to a polarization direction of electric domains of the recording medium.

Abstract: A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer.

Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

Abstract: A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.