Abstract: A method of calibrating an optical sensor may include acquiring a first characteristic for an external light source through a detector of an optical sensor while an internal light source of the optical sensor is turned off; driving the internal light source; acquiring a second characteristic for the internal light source and the external light source through the detector, based on driving the internal light source; and acquiring a reference characteristic of the internal light source, for calculation of an absorbance of an object, based on the first characteristic and the second characteristic.

Abstract: A method of manufacturing a nitrogen (N)-face nitride semiconductor and an N-face nitride semiconductor device manufactured using the method are provided. The method includes preparing a substrate, and forming a nitrogen-polarization (N-polar) nitride semiconductor layer on the substrate, using a pulse growth mode. The forming of the N-polar nitride semiconductor layer may include supplying a Group V element precursor, a Group III element precursor, or both in a pulse mode in a vapor deposition process.

Abstract: Cathodes and lithium secondary batteries including the cathodes are disclosed. In some implementations, a cathode may include a cathode current collector and a cathode active material layer disposed on the cathode current collector and including cathode active material particles such that the cathode active material layer satisfies a specific equation. The cathode active material particles may include lithium metal oxide particles that include nickel, and may have a mole fraction of cobalt of 0.02 or less with respect to all elements except for lithium and oxygen.

Abstract: A method of manufacturing a nitride semiconductor and a nitride semiconductor thin film prepared using the method are provided. The method includes preparing a substrate, forming a buffer layer by growing a thin film having a three-dimensional (3D) structure on the substrate, and forming a nitride semiconductor layer on the buffer layer.

Abstract: The present disclosure relates to an expanded foam solution for forming a thermosetting expanded foam having excellent flame retardancy produced using the same. According to the present disclosure, nanoclay is mixed with a polyol-based compound using ultrasonic waves, an isocyanate-based compound is added, and a trimerization catalyst or an isocyanurate compound is mixed with the polyol-based compound so that an isocyanurate structure is formed.

Abstract: A propulsion module of an air mobility vehicle may include a door provided in the housing and opening or closing the opening portion of the housing by a sliding motion of the door; a propeller for providing propulsion to the air mobility vehicle; a link assembly having a first end portion connected to the housing and a second end portion connected to the propeller to pull the propeller into the internal space of the housing through the opening portion or pull the propeller outside the internal space through the opening portion; and a door opening and closing portion coupled to the door and configured for providing an opening and closing force to the door according to an inward-pulling motion or an outward-pulling motion of the propeller.

Abstract: The present invention relates to a method of manufacturing an AlN-based transistor. An AlN-based high electron mobility transistor (HEMT) element according to the present invention may use an AlN buffer layer, and include an AlGaN composition change layer inserted into a GaN/AlN interface to remove or suppress a degree of generation of a two-dimensional hole gas (2DHG), thereby decreasing an influence of a coulomb drag on a two-dimensional electron gas (2DEG) layer and improving mobility of a two-dimensional electron gas (2DEG).

Abstract: The present disclosure relates to a medical image analysis method using a processor and a memory which are hardware. The method includes generating predicted second metadata for a medical image by using a prediction model, and determining a processing method of the medical image based on one of first metadata stored corresponding to the medical image and the second metadata.

Abstract: A sputtering apparatus includes a back plate supporting a sputtering target, a magnet module disposed under the back plate and including a magnet unit reciprocating in a first direction, a first shielding member attached on a portion of the magnet unit, moving together with the magnet unit, and covering at least a portion of the magnet unit, a protective sheet disposed between the back plate and the magnet module, and a second shielding member disposed between the back plate and the magnet module, and having a fixed position.

Abstract: Disclosed are a metal thin film precursor composition, a method of forming a thin film using the metal thin film precursor composition, and a semiconductor substrate fabricated using the method. The metal thin film precursor composition includes a metal thin film precursor compound and a growth regulator including a predetermined terminal group and structure. In a thin film deposition process, by using the metal thin film precursor composition, side reactions may be suppressed and thin film growth rate may be controlled appropriately. Since process by-products in a thin film are removed, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the crystallinity of the thin film may be improved, thereby improving the electrical properties of the thin film.

Abstract: The sintered body including silicon oxide and carbon, wherein the sintered body has a D band peak at a wave number of 1,311 cm?1 to 1,371 cm?1 and a G band peak at a wave number of 1,572 cm?1 to 1,632 cm?1 in a Raman spectrum, and wherein the D band peak or the G band peak have a higher intensity than a fifth peak present at a wave number of 1,027 cm?1 to 1,087 cm?1 in the Raman spectrum, is disclosed.

Abstract: The present invention relates to an auxiliary precursor, a thin film precursor composition, a method of forming a thin film using the thin film precursor composition, and a semiconductor substrate fabricated using the method. The present invention provides the thin film precursor composition including a thin film precursor compound and a compound having a predetermined structure that exhibits reaction stability as the auxiliary precursor. By using the thin film precursor composition in a thin film deposition process, side reactions may be suppressed, and thin film growth rate may be appropriately controlled. In addition, since process by-products are removed from a thin film, even when a thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved.

Abstract: A display device comprises a display panel comprising an image display area and a non-display area, display pixels comprising light-emitting elements in the image display area and pixel driving units connected to the light-emitting elements, light-sensing pixels comprising photo-detecting units in a fingerprint sensing area in the image display area, and sense driving units connected to the photo-detecting units, a light-sensing reset driver configured to supply reset signals to the sense driving units of the light-sensing pixels for at least each horizontal line among the light-sensing pixels in response to a line select signal from a display driving circuit; and a fingerprint scan driver configured to sequentially supply a fingerprint scan signal to the sense driving units of the light-sensing pixels in response to a fingerprint scan control signal from the display driving circuit.

Abstract: A display device may include a substrate, and a display element layer disposed on the substrate and including a light emitting element that emits light in a display direction. The display element layer may include a first contact electrode electrically connected to the light emitting element, a second contact electrode electrically connected to the light emitting element, and a bank pattern having a shape extending in the display direction. At least one of the first contact electrode, the second contact electrode, and the bank pattern may include a transparent conductive polymer.

Abstract: The austenitic stainless steel that does not cause defects such as aging crack or delayed fracture even after the expansion and curling process of 5 steps or more is disclosed. In accordance with an aspect of the present disclosure, an austenitic stainless steel with excellent pipe expanding workability and aging crack resistance includes, in percent (%) by weight of the entire composition, C: 0.01 to 0.04%, Si: 0.1 to 1.0%, Mn: 0.1 to 2.0%, Cr: 16 to 20%, Ni: 6 to 10%, Cu: 0.1 to 2.0%, Mo: 0.2% or less, N: 0.035 to 0.07%, the remainder of iron (Fe) and other inevitable impurities, and the C+N satisfies 0.1% or less, the product of the Md30 (° C.) value and average grain size (?m) satisfies less than ?500.

Abstract: A shoes care device includes an inner cabinet configured to accommodate shoes inside; a outlet configured to suck air inside the inner cabinet; a nozzle duct having one end hinge-coupled to the inner cabinet so as to protrude into the inner cabinet, and which forms a passage for air; a nozzle hinge-coupled to the other end of the nozzle duct so that the shoes can be inserted into the inner cabinet, and configured to inject air into the shoes; a nozzle connector, of which one end is hinge-coupled to the inner cabinet and of which the other end is hinge-coupled to the nozzle; a connection path from the suction to the nozzle; a blowing part in the connection path and configured to ventilate air from the outlet to the nozzle; and a dehumidifying part in the connection path and capable of dehumidifying the ventilated air.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.