Abstract: Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The time of the memory cell's set-current pulse can be 100 ns, much longer than read or reset times. The write time thus depends on the write data and is relatively long. A page-mode caching PCM device has a lookup table (LUT) that caches write data that is later written to an array of PCM banks. Host data is latched into a line FIFO and written into the LUT, reducing write delays to the relatively slow PCM. Host read data can be supplied by the LUT or fetched from the PCM banks. A multi-line page buffer between the PCM banks and LUT allows for larger block transfers using the LUT. Error-correction code (ECC) checking and generation is performed for data in the LUT, hiding ECC delays for data writes into the PCM banks.

Abstract: Peripheral devices store data in non-volatile phase-change memory (PCM). PCM cells have alloy resistors with high-resistance amorphous states and low-resistance crystalline states. The peripheral device can be a Serial AT-Attachment (SATA) or integrated device electronics (IDE) PCM solid-state disk or a Multi-Media Card/Secure Digital (MMC/SD) card. A peripheral PCM controller accesses PCM mass storage devices containing PCM memory chips that form a mass-storage device that is block-addressable rather than randomly-addressable. SATA, IDE, or MMC/SD transactions from a host bus are read by a bus transceiver on the peripheral PCM controller. Various routines that execute on a CPU in the peripheral PCM controller are activated in response to commands in the host-bus transactions. A PCM controller in the peripheral controller transfers data from the bus transceiver to the PCM mass storage devices for storage.

Abstract: A hybrid storage device comprises both solid-state disk (SDD) and at least one hard disk drive (HDD). The hybrid storage device has at least two operational modes: concatenation and safe. According to one aspect, the total capacity of hybrid storage device is the sum of SSD and at least one HDD in a concatenation or big mode, while the total capacity is the capacity of the HDD in a safe mode.

Abstract: A Bose, Ray-Chaudhuri, Hocquenghem (BCH) decoder is employed in non-volatile memory applications for determining the number of errors and locating the errors in a page of information. The decoder includes a syndrome calculator responsive to a sector of information. The sector includes data and overhead, with the data being organized into data sections and the overhead being organized into overhead sections. The syndrome calculator generates a syndrome for each of the data sections. A root finder is coupled to receive the calculated syndrome and to generate at least two roots. A polynomial calculator responds to the two roots and generates at least two error addresses, each identifying a location in the data wherein the error lies.

Abstract: High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.

Abstract: A flash memory device includes one or two panels that are attached solely by a thermal bond adhesive to either a frame or integrated circuits (e.g., flash memory devices) disposed on a PCBA. The frame is disposed around the PCBA and supports peripheral edges of the panels. The thermal bond adhesive is either heat-activated or heat-cured, and is applied to either the memory devices, the frame or the panels, and then compressed between the panels and flash memory devices/frame using a fixture. The fixture is then passed through an oven to activate/cure the adhesive. An optional insulating layer is disposed between the panels and the ICs. An optional conforming coating layer is formed over the ICs for preventing oxidation of integrated circuit leads or soldering area, covering or protecting extreme temperature exposure either cold or hot, and waterproofing for certain military or industrial applications.

Abstract: Systems and methods for communicating using various protocols through the Secured Digital (SD) physical interface are disclosed. The invention covers, among others, single-mode and multi-mode hosts, single-mode and multi-mode devices, as well as techniques for initializing these hosts and devices in order to facilitate the aforementioned communication.

Abstract: Methods and systems of managing memory addresses in a large capacity multi-level cell based flash memory device are described. According to one aspect, a flash memory device comprises a processing unit to manage logical-to-physical address correlation using an indexing scheme. The flash memory is partitioned into N sets. Each set includes a plurality of entries (i.e., blocks). N sets of partial logical entry number to physical block number and associated page usage information (hereinafter ‘PLTPPUI’) are stored in the reserved area of the MLC based flash memory. Only one the N sets is loaded to address correlation and page usage memory (ACPUM), which is a limited size random access memory (RAM). In one embodiment, static RAM (SRAM) is implemented for fast access time for the address correlation. LSA received together with the data transfer request dictates which one of the N sets of PLTPPUI is loaded into ACPUM.

Abstract: A Multi-Media Card/Secure Digital (MMC/SD) single-chip flash device contains a MMC/SD flash microcontroller and flash mass storage blocks containing flash memory arrays that are block-addressable rather than randomly-addressable. MMC/SD transactions from a host MMC/SD bus are read by a bus transceiver on the MMC/SD flash microcontroller. Various routines that execute on a CPU in the MMC/SD flash microcontroller are activated in response to commands in the MMC/SD transactions. A flash-memory controller in the MMC/SD flash microcontroller transfers data from the bus transceiver to the flash mass storage blocks for storage. Rather than boot from an internal ROM coupled to the CPU, a boot loader is transferred by DMA from the first page of the flash mass storage block to an internal RAM. The flash memory is automatically read from the first page at power-on. The CPU then executes the boot loader from the internal RAM to load the control program.

Abstract: Peripheral devices store data in non-volatile phase-change memory (PCM). PCM cells have alloy resistors with high-resistance amorphous states and low-resistance crystalline states. The peripheral device can be a Multi-Media Card/Secure Digital (MMC/SD) card. A PCM controller accesses PCM memory devices. Various routines that execute on a CPU in the PCM controller are activated in response to commands in the host-bus transactions. The PCM system increases the throughput of one or more phase-change memory devices by performing one or more of a read-ahead memory operation, a write-ahead memory write operation, a larger page memory write operation, a wider data bus memory write operation, a multi-channel concurrent multi-bank interleaving memory read or write operation, a write-cache memory write operation, and any combination thereof.

Abstract: One embodiment of the present includes a electronic data storage card having a Reed Solomon (RS) decoder having a syndrome calculator block responsive to a page of information, the page being organized into a plurality of data sections and the overhead being organized into a plurality of overhead sections. The syndrome calculator generates a syndrome for each of the data sections. The decoder further includes a root finder block responsive to the calculated syndrome and for generating at least two roots, a polynomial calculator block responsive to the at least two roots and operative to generate at least one error address, identifying a location in the data wherein the error lies, and an error symbol values calculator block coupled to the root finder and the polynomial calculator block and for generating a second error address, identifying a second location in the data wherein the error(s) lie.

Abstract: Methods and systems of managing memory addresses in a large capacity multi-level cell based flash memory device are described. According to one aspect, a flash memory device comprises a processing unit to manage logical-to-physical address correlation using an indexing scheme. The flash memory is partitioned into N sets. Each set includes a plurality of entries (i.e., blocks). N sets of partial logical entry number to physical block number and associated page usage information (hereinafter ‘PLTPPUI’) are stored in the reserved area of the MLC based flash memory. Only one the N sets is loaded to address correlation and page usage memory (ACPUM), which is a limited size random access memory (RAM). In one embodiment, static RAM (SRAM) is implemented for fast access time for the address correlation. LSA received together with the data transfer request dictates which one of the N sets of PLTPPUI is loaded into ACPUM.

Abstract: Non-volatile memory based computer systems and methods are described. According to one aspect of the invention, at least one non-volatile memory module is coupled to a computer system as main storage. The non-volatile memory module is controlled by a northbridge controller configured to control the non-volatile memory as main memory. The page size of the at least one non-volatile memory module is configured to be the size of one of the cache lines associated with a microprocessor of the computer system. According to another aspect, at least one non-volatile memory module is coupled to a computer system as data read/write buffer of one or more hard disk drives. The non-volatile memory module is controlled by a southbridge controller configured to control the non-volatile memory as an input/out device. The page size of the at least one non-volatile memory module is configured in proportion to characteristics of the hard disk drives.

Abstract: According to certain embodiments of the invention, a single chip COB USB manufacturing is using chip-on-board (COB) processes on a PCB panel with multiple individual USB PCB substrates. This single chip COB USB is laid out in an array of N×M matrixes. The advantages of this method are: 1) use molding over PCBA, versus conventional of using SMT process to mount all necessary component on substrate to form PCBA; 2) simpler rectangular structure to fit any external decorative shell package for added value; and 3) package is moisture resistance if not water proof.

Abstract: High integration of a non-volatile memory device (NVMD) is disclosed. According to one aspect of the present invention, a non-volatile memory device comprises an intelligent non-volatile memory (NVM) controller and an intelligent non-volatile memory module. The NVM controller includes a central processing unit (CPU) configured to handle data transfer operations to the NVM module to ensure source synchronous interface, interleaved data operations and block abstracted addressing. The intelligent NVM module includes an interface logic, a block address manager and at least one non-volatile memory array. The interface logic is configured to handle physical block management. The block address manager is configured to ensure a physical address is converted to a transformed address that is accessible to the CPU of the intelligent NVM controller. The transformed address may be an address in blocks, pages, sectors or bytes either logically or physically.

Abstract: A low-profile Universal-Serial-Bus (USB) device includes a PCBA in which all passive components and unpackaged IC chips are attached to a single side of a PCB opposite to the metal contacts. The IC chips include, for example, a USB controller chip and a flash memory chip, or a single-chip (combined USB controller/flash memory) chip. Multiple flash IC chips are optionally stacked to increase storage capacity. The IC chip(s) are attached to the PCB by wire bonding or other chip-on-board (COB) technique. The passive components are attached by conventional surface mount technology (SMT) techniques. A molded housing is then formed over the IC chips and passive components such that the device has a uniform thickness. The low-profile USB device is optionally used as a modular insert that is mounted onto a metal case to provide a USB assembly having a plug shell similar to a standard USB male connector.

Abstract: Solid state drive (SSD) testing processes and methods are disclosed.

Abstract: An electronic data flash card includes a random number generator that generates a random number stored in the card and a host system each time the card is accessed by the host system. The random number is used by the host system to encrypt a logical branch address, a user password, and user data that is written to and stored in a secure area of the card. The random number is encrypted using a key associated with the card, and the encrypted random number is stored by the card with the associated encrypted data. The random number is not stored in the host system. A new random number is generated each time the card is queried. In a read process the host system decrypts the encrypted random number using the key, then uses the random number to decrypt the associated encrypted data. Access to read/write processes are password protected.

Abstract: An extended USB plug connector includes a connector substrate including a frontend having a first set of electrical contact pins disposed thereon and a backend having a second set of electrical contact pins disposed thereon. The first set includes a first row of electrical contact pins disposed on a top surface of the connector substrate and a second row of electrical contact pins disposed in parallel with the first row of electrical contact pins and interior to the first row of electrical contact pins, where the second row includes more electrical contact pins than the first row. The second set of electrical contact pins includes a number of electrical contact pins equal to the first row and second row of electrical contact pins in total. The second set of electrical contact pins are used to connect to corresponding electrical contact pads disposed on a printed circuit board assembly having a USB controller and flash memory devices disposed thereon.

Abstract: Data error detection and correction in non-volatile memory devices are disclosed. Data error detection and correction can be performed with software, hardware or a combination of both. Generally an error corrector is referred to as an ECC (error correction code). One of the most relevant codes using in non-volatile memory devices is based on BCH (Bose, Ray-Chaudhuri, Hocquenghem) code. In order to correct reasonable number (e.g., up to 8-bit (eight-bit)) of random errors in a chunk of data (e.g., a codeword of 4200-bit with 4096-bit information data), a BCH(4200,4096,8) is used in GF(213). ECC comprises encoder and decoder. The decoder further comprises a plurality of error detectors and one error corrector. The plurality of error decoders is configured for calculating odd terms of syndrome polynomial for multiple channels in parallel, while the error corrector is configured for sequentially calculating even terms of syndrome polynomial, key solver and error location.