Abstract: An electronic data storage device having a Reed Solomon (RS) decoder including a syndrome calculator block responsive to information including data and overhead and operative to generate a syndrome, in accordance with an embodiment of the present invention. The electronic data storage device further includes a root finder block coupled to receive said syndrome and operative to generate at least two roots, said RS decoder for processing said two roots to generate at least one error address identifying a location in said data wherein said error lies; and an erasure syndrome calculator block responsive to said information and operative to generate an erasure syndrome, said RS decoder responsive to said information identifying a disk crash, said RS decoder for processing said erasure syndrome to generate an erasure error to recover the data in said disk crash.

Abstract: In one embodiment of the present invention a Universal Serial Bus (USB) flash drive with locking swivel cap includes a USB device, a swivel cap having a top swivel cap face and a bottom swivel cap face. The swivel cap is connectably attached to the USB device, four locking pins, two of which disposed on the top swivel cap face and two of which disposed on the bottom swivel cap face, two top locking grooves disposed on a top surface of the USB device, and two bottom locking grooves disposed on a bottom surface of the USB device, wherein the locking pins disposed on top swivel cap face coupled with the two top locking grooves and the locking pins disposed on the bottom swivel cap face couple with the two bottom locking grooves allowing the swivel cap to lock in fully open (180 degrees) and fully closed (0 degree). A USB connector is connected to the USB device to couple the USB flash drive to a host device.

Abstract: A personal computer motherboard has a main memory of phase-change-memory (PCM) chips in PCM memory modules. An operating system (OS) image is stored in the PCM memory modules and is retained during suspend since the PCM chips are non-volatile. The microprocessor can directly read the OS image retained in the PCM memory modules without copying an OS image from a hard disk to the main memory upon resume. Therefore a boot loader program in the boot ROM does not have to be fetched to the microprocessor for suspend/resume. The video memory can also be PCM, allowing the frame buffer to be retained during suspend/resume, yet be directly addressable by the microprocessor. The display is quickly activated since the frame buffer does not have to be re-constructed after suspend/resume. PCM cells use amorphous and crystalline states of a variable resistor to store data.

Abstract: Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The memory cell's reset current can be double a set current, causing peak currents to depend on write data. When all data bits are reset to the amorphous state, a very high peak current is required. To reduce this worst-case peak current, the data is encoded before storage in the PCM cells. An 8/10 encoder adds 2 bits but ensures that no more than half of the data bits are reset. An 8/9 encoder adds an indicator bit, and inverts the 8 bits to ensure that no more than half of the bits are reset. The indicator bit indicates when the 8 bit are inverted, and when the 8 bits are uninverted. Peak currents are thus reduced by encoding to reduce reset data bits.

Abstract: A Universal Serial Bus (USB) flash drive includes a slim USB device having an end used to couple the USB flash drive to a host and an opposite end and a swivel cap having a side slit that serves as an opening into which the slim USB device travels horizontally, the side slit being disposed along a lateral side of the swivel cap. The USB flash drive also includes a USB device rivet placed into the slim USB device and the swivel cap to pivotally connect them at one of the ends of the slim USB device, so that the slim USB device is pivotally extendable outwardly from the side slit in a closed or open position.

Abstract: An extended Universal-Serial-Bus (USB) connector plug and socket each have a pin substrate with one surface that supports the four metal contact pins for the standard USB interface. An extension of the pin substrate carries another 8 extension metal contact pins that mate when both the connector plug and socket are extended. The extension can be an increased length of the plug's and socket's pin substrate or a reverse side of the substrate. Standard USB connectors do not make contact with the extension metal contacts that are recessed, retracted by a mechanical switch, or on the extension of the socket's pin substrate that a standard USB connector cannot reach. Standard USB sockets do not make contact with the extension metal contacts because the extended connector's extension contacts are recessed, or on the extension of the connector pin substrate that does not fit inside a standard USB socket.

Abstract: Phase-change memory (PCM) cells store data using alloy resistors in high-resistance amorphous and low-resistance crystalline states. The memory cell's reset current can be double a set current, causing peak currents to depend on write data. When all data bits are reset to the amorphous state, a very high peak current is required. To reduce this worst-case peak current, the data is encoded before storage in the PCM cells. An 8/10 encoder adds 2 bits but ensures that no more than half of the data bits are reset. An 8/9 encoder adds an indicator bit, and inverts the 8 bits to ensure that no more than half of the bits are reset. The indicator bit indicates when the 8 bit are inverted, and when the 8 bits are un-inverted. Peak currents are thus reduced by encoding to reduce reset data bits.

Abstract: Methods and systems of managing memory addresses in a large capacity multi-level cell based flash memory device are described. According to one aspect, a flash memory device comprises a processing unit to manage logical-to-physical address correlation using an indexing scheme. The flash memory is partitioned into N sets. Each set includes a plurality of entries (i.e., blocks). N sets of partial logical entry number to physical block number and associated page usage information (hereinafter ‘PLTPPUI’) are stored in the reserved area of the MLC based flash memory. Only one the N sets is loaded to address correlation and page usage memory (ACPUM), which is a limited size random access memory (RAM). In one embodiment, static RAM (SRAM) is implemented for fast access time for the address correlation. LSA received together with the data transfer request dictates which one of the N sets of PLTPPUI is loaded into ACPUM.

Abstract: Methods and systems of booting an intelligent non-volatile memory (NVM) microcontroller from various sources are described. According to one aspect of the present invention, a NVM microcontroller comprises multiple memory interfaces. Each of the memory interfaces may connect to one of the various sources for booting. The sources may include random access memory (RAM), read-only memory (ROM), Electrically Erasable Programmable ROM (EEPROM) (e.g., NOR flash memory, NAND flash memory). RAM may include static RAM (SRAM), dynamic RAM (DRAM), and synchronous dynamic RAM (SDRAM). Other sources include Secure Digital (SD) card and intelligent non-volatile memory devices. The NAND flash memory may include single-level cell (SLC) flash or multi-level cell (MLC) flash. SLC flash uses a single level per cell or two states per cell, while MLC flash stores four, eight or more states per cell.

Abstract: An embodiment of the present invention includes an extended memory card comprising memory circuitry, extended memory controller circuitry, a plurality of first format connection fingers, and a plurality of second format connection fingers. The memory circuitry is operable to store data files therein. The extended memory controller circuitry is operable to control data file storage and retrieval to and from the memory circuitry. The extended memory controller circuitry is further operable to control interface of the extended memory card through either the first format connection fingers or the second format connection fingers with a host device to transfer data files from the host device to be stored on the memory circuitry, and to retrieve data files from the memory circuitry to the host device.

Abstract: A portable USB device with an improved configuration is described herein. According to one embodiment, a portable USB device includes a core unit having a USB plug connector coupled to one or more multi-level cell (MLC) flash memory devices and an MLC flash controller disposed therein. The portable USB device further includes a housing for enclosing the core unit, including a front end opening to allow the USB plug connector to be deployed. The portable USB device further includes a core unit carrier for carrying the core unit for deploying and retracting the core unit, including a slide button to allow a finger of a user to slide the USB plug connector of the core unit in and out of the housing via the front end opening of the housing.

Abstract: A portable USB device is described herein. According to one embodiment, a portable USB device includes a core unit having a USB plug connector coupled to one or more multi-level cell (MLC) flash memory devices and an MLC flash controller disposed therein. The device further includes a housing for enclosing the core unit. The device further includes a swivel cap having a top surface and a bottom surface by bending a flat panel into a U-shape block having an opening end, a close end, and two side-openings, where the top and bottom surfaces of the swivel cap include a rivet opening align with each other. The housing having the core unit therein is sandwiched by the swivel cap using a set of rivets through the rivet openings of the housings and the swivel cap. The core unit can be rotated with respect to the rivet set in and out of the swivel cap.

Abstract: A Multi-Media Card/Secure Digital (MMC/SD) single-chip flash device contains a MMC/SD flash microcontroller and flash mass storage blocks containing flash memory arrays that are block-addressable rather than randomly-addressable. MMC/SD transactions from a host MMC/SD bus are read by a bus transceiver on the MMC/SD flash microcontroller. Various routines that execute on a CPU in the MMC/SD flash microcontroller are activated in response to commands in the MMC/SD transactions. A flash-memory controller in the MMC/SD flash microcontroller transfers data from the bus transceiver to the flash mass storage blocks for storage. Rather than boot from an internal ROM coupled to the CPU, a boot loader is transferred by DMA from the first page of the flash mass storage block to an internal RAM. The flash memory is automatically read from the first page at power-on. The CPU then executes the boot loader from the internal RAM to load the control program.

Abstract: A flash memory device includes one or two panels that are attached solely by a thermal bond adhesive to either a frame or integrated circuits (e.g., flash memory devices) disposed on a PCBA. The frame is disposed around the PCBA and supports peripheral edges of the panels. The thermal bond adhesive is either heat-activated or heat-cured, and is applied to either the memory devices, the frame or the panels, and then compressed between the panels and flash memory devices/frame using a fixture. The fixture is then passed through an oven to activate/cure the adhesive. An optional insulating layer is disposed between the panels and the ICs. An optional conforming coating layer is formed over the ICs for preventing oxidation of integrated circuit leads or soldering area, covering or protecting extreme temperature exposure either cold or hot, and waterproofing for certain military or industrial applications.

Abstract: Hybrid solid state drives (SSD) using a combination of single-level cell (SLC) and multi-level cell (MLC) flash memory arrays are described. According to one aspect of the present invention, a hybrid SSD is built using a combination SLC and MLC flash memory arrays. The SSD also includes a micro-controller to control and coordinate data transfer from a host computing device to either the SLC flash memory array of the MLC flash memory array. A memory selection indicator is determined by triaging data file based on one or more criteria, which include, but is not limited to, storing system files and user directories in the SLC flash memory array and storing user files in the MLC flash memory array; or storing more frequent access files in the SLC flash memory array, while less frequent accessed files in the MLC flash memory array.

Abstract: High integration of a non-volatile memory device (NVMD) is disclosed. According to one aspect of the present invention, a non-volatile memory device comprises an intelligent non-volatile memory (NVM) controller and an intelligent non-volatile memory module. The NVM controller includes a central processing unit (CPU) configured to handle data transfer operations to the NVM module to ensure source synchronous interface, interleaved data operations and block abstracted addressing. The intelligent NVM module includes an interface logic, a block address manager and at least one non-volatile memory array. The interface logic is configured to handle physical block management. The block address manager is configured to ensure a physical address is converted to a transformed address that is accessible to the CPU of the intelligent NVM controller. The transformed address may be an address in blocks, pages, sectors or bytes either logically or physically.

Abstract: High endurance non-volatile memory devices (NVMD) are described. A high endurance NVMD includes an I/O interface, a NVM controller, a CPU along with a volatile memory subsystem and at least one non-volatile memory (NVM) module. The volatile memory cache subsystem is configured as a data cache subsystem. The at least one NVM module is configured as a data storage when the NVMD is adapted to a host computer system. The I/O interface is configured to receive incoming data from the host to the data cache subsystem and to send request data from the data cache subsystem to the host. The at least one NVM module may comprise at least first and second types of NVM. The first type comprises SLC flash memory while the second type MLC flash. The first type of NVM is configured as a buffer between the data cache subsystem and the second type of NVM.

Abstract: Improved reliability high endurance non-volatile memory device with zone-based non-volatile memory file system is described. According to one aspect of the present invention, a zone-based non-volatile memory file system comprises a two-level address mapping scheme: a first level address mapping scheme maps linear or logic address received from a host computer system to a virtual zone address; and a second level address mapping scheme maps the virtual zone address to a physical zone address of a non-volatile memory module. The virtual zone address represents a number of zones each including a plurality of data sectors. Zone is configured as a unit smaller than data blocks and larger than data pages. Each of the data sector consists of 512-byte of data. The ratio between zone and the sectors is predefined by physical characteristics of the non-volatile memory module. A tracking table is used for correlating the virtual zone address with the physical zone address.

Abstract: Systems and methods of manufacturing and testing non-volatile memory (NVM) devices are described. According to one exemplary embodiment, a function test during manufacturing of the NVM modules is conducted with a system comprises a computer and a NVM tester coupling to the computer via an external bus. The NVM tester comprises a plurality of slots. Each of the slots is configured to accommodate respective one of the NVM modules to be tested. The NVM tester is configured to include an input/output interface, a microcontroller with associated RAM and ROM, a data generator, an address generator, a comparator, a comparison status storage space, a test result indicator and a NVM module detector. The data generator generates a repeatable sequence of data bits as a test vector. The known test vector is written to NVM of the NVM module under test. The known test vector is then compared with the data retrieved from the NVM module.

Abstract: Portable electronic storage devices with hardware based security are described. According to one exemplary embodiment of the present invention, a portable electronic storage device (PESD) comprises a security engine integrated thereon. The security engine is configured to provide data encryption, data decryption, and encryption/decryption key (referred to as a key) generation according to a security standard (e.g., Advance Encryption Standard (AES)). AES is a symmetric encryption algorithm processing data in block of 128 bits. Under the influence of a key, a 128-bit data block is encrypted by transforming the data block in a unique way into a new data block of the same size. AES is symmetric sine the same key is used for encryption and the reverse transformation (i.e., decryption). The only secret necessary to keep for security is the key. AES may use different key-lengths (i.e., 128-bit, 192-bits and 256-bits).