Abstract: A multi-stage amplifier including a first amplifier stage including a first transistor, the first transistor selected to provide an optimum noise characteristic, and a second amplifier stage including a second transistor, the second transistor selected to provide an optimum gain characteristic.

Abstract: A switch circuit including a first differential amplifier pair providing a portion of an isolation channel, a second differential amplifier pair providing a portion of a transmit channel, and a third differential amplifier pair providing a control bias for selecting either the transmit channel or the isolation channel. The switch circuit provides 35 dB isolation between input and output over a 15 GHz-26 GHz range, yet is only 500 ?m by 250 ?m in size.

Abstract: A radar based sensor detection system comprises a microwave source operative to provide a continuous wave signal at an output. A pulse-former is coupled to the output of the source and is operative to provide at an output a variable length pulse that increases the transmitted energy of the radar system according to the range of object detection. A modulator is coupled to the output of the pulse-former for providing a modulated pulse signal when required. A transmit/receive switch coupled to the output of the modulator is selectively operative between a first transmit position and a second receive position. A transmit channel coupled to the transmit/receive switch transmits the pulse signal when the switch is operated in the transmit position. A receiving channel coupled to the transmit/receive switch receives the modulator signal when the switch is operated in the receive position.

Abstract: A wide bandwidth bias tee including a high frequency terminal, a first resistor coupled between the high frequency terminal and a capacitor, a second resistor coupled to the capacitor, the second resistor coupled in series with the first resistor, and a low frequency terminal, the low frequency terminal coupled to the second resistor.

Abstract: A radar based sensor detection system comprises a microwave source operative to provide a continuous wave signal at an output. A pulse-former is coupled to the output of the source and is operative to provide at an output a variable length pulse that increases the transmitted energy of the radar system according to the range of object detection. A modulator is coupled to the output of the pulse-former for providing a modulated pulse signal. A transmit receive switch coupled to the output of the modulator is selectively operative between a first transmit position and a second receive position. A transmit channel coupled to the transmit receive switch transmits the pulse signal when the switch is operated in the transmit position. A receiving channel coupled to the transmit receive switch receives the modulator signal when the switch is operated in the receive position.

Abstract: A wide bandwidth bias tee including a high frequency terminal, a first resistor coupled between the high frequency terminal and a capacitor, a second resistor coupled to the capacitor, the second resistor coupled in series with the first resistor, and a low frequency terminal, the low frequency terminal coupled to the second resistor.

Abstract: A radar based sensor detection system comprises a microwave source operative to provide a continuous wave signal at an output. A pulse-former is coupled to the output of the source and is operative to provide at an output a variable length pulse that increases the transmitted energy of the radar system according to the range of object detection. A modulator is coupled to the output of the pulse-former for providing a modulated pulse signal. A transmit receive switch coupled to the output of the modulator is selectively operative between a first transmit position and a second receive position. A transmit channel coupled to the transmit receive switch transmits the pulse signal when the switch is operated in the transmit position. A receiving channel coupled to the transmit receive switch receives the modulator signal when the switch is operated in the receive position.

Abstract: A high frequency carrier is provided which comprises: (a) a planar ceramic substrate having first and second faces and (b) at least one feed-through extending from the first face to the second face. The at least one feed-through comprises a pedestal of doped semiconductor that is at least partially surrounded by a conductive metal layer. Also described is an electrical assembly, which comprises the above high frequency carrier and a metallized substrate. The first face of the carrier is attached to the metallized substrate such that the at least one feed-through is electrically connected to the metallized substrate. The electrical assembly can also comprise at least one electronic element (such as an electronic component or an electronic circuit) that is attached to the second face of the carrier such that the at least one electronic element is electrically connected to at least one feed-through.