Patents by Inventor Ichiro Hayashida
Ichiro Hayashida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8900371Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.Type: GrantFiled: September 14, 2011Date of Patent: December 2, 2014Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Hironori Mizuta, Masahiko Kakizawa, Ichiro Hayashida
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Patent number: 8871653Abstract: An etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film on a semiconductor substrate and an etching method using the etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive. An etching method for etching a titanium (Ti)-based metal film on a semiconductor substrate using the etching agent. A solution comprising (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive.Type: GrantFiled: March 18, 2013Date of Patent: October 28, 2014Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Osamu Matsuda, Nobuyuki Kikuchi, Ichiro Hayashida, Satoshi Shirahata
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Patent number: 8513139Abstract: The present invention is directed to provide an etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate and an etching method using relevant etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) 0.Type: GrantFiled: December 19, 2008Date of Patent: August 20, 2013Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Osamu Matsuda, Nobuyuki Kikuchi, Ichiro Hayashida, Satoshi Shirahata
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Publication number: 20120000485Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.Type: ApplicationFiled: September 14, 2011Publication date: January 5, 2012Applicant: WAKO PURE CHEMICAL INDUSTRIES, LTD.Inventors: Hironori Mizuta, Masahiko Kakizawa, Ichiro Hayashida
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Publication number: 20110230053Abstract: The present invention is directed to provide an etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate and an etching method using relevant etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) 0.Type: ApplicationFiled: December 19, 2008Publication date: September 22, 2011Applicant: WAKO PURE CHEMICAL INDUSTRIES, LTD.Inventors: Osamu Matsuda, Nobuyuki Kikuchi, Ichiro Hayashida, Satoshi Shirahata
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Patent number: 7700532Abstract: The present invention relates to a liquid cleaner for a semiconductor substrate on which metal wiring may be provided, comprising each component of a chelating agent or a salt thereof shown by the following general formula (1), an alkaline compound and pure water, wherein pH is 8 to 13: (wherein, Y1 and Y2 are lower alkylene groups, n is an integer of 0 to 4, at least 4 of R1 to R4 and n R5s are alkyl groups having phosphonic acid group(s) and the rest are alkyl groups) and a cleaning method using the same. The present invention provides a liquid cleaner which can efficiently remove fine particles or impurities derived from various metals at semiconductor substrate surface, even when used after a process adopting an alkaline polishing agent or alkaline etching liquid, without generating problems of causing difficult-to-remove gelled particles at the substrate surface or easy generation of rough semiconductor substrate surface, and a cleaning method using the same.Type: GrantFiled: November 7, 2003Date of Patent: April 20, 2010Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Ichiro Hayashida, Hironori Mizuta, Takehisa Kato
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Publication number: 20090227115Abstract: Disclosed are an etching solution for a substrate and a substrate-etching method, which can prevent the contamination of a substrate, particularly a semiconductor substrate, with metal impurities. The etching solution comprises a dicarboxylic acid represented by the general formula (1) or a salt thereof and 20% (W/W) or more of an alkali metal hydroxide. The substrate-etching method comprises the step of etching a substrate with said etching solution.Type: ApplicationFiled: May 22, 2007Publication date: September 10, 2009Applicant: WAKO PURE CHEMICAL INDUSTRIES, LTD.Inventors: Takehisa Kato, Masahiko Kakizawa, Ichiro Hayashida
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Patent number: 7481949Abstract: A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a chelating agent, an alkali compound, silicon dioxide and water. The rinsing composition includes a chelating agent, an alkali compound and water. The chelating agent contained in the polishing composition and the rinsing composition is an acid represented by the following chemical formula (1) or a salt thereof. In the chemical formula (1), each of Y2 and Y3 represents an alkylene group, n is an integer of 0 to 4, each of 4+n substituents represented by R8 to R12 is an alkyl group. At least four of the alkyl groups have a phosphonic acid group.Type: GrantFiled: November 7, 2003Date of Patent: January 27, 2009Assignee: Wako Pure Chemical Industries, LtdInventors: Akihiro Kawase, Toshihiro Miwa, Kenji Sakamoto, Ichiro Hayashida
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Patent number: 7375066Abstract: A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent. The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiO2 of the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface of the Cu-CMP step.Type: GrantFiled: March 19, 2001Date of Patent: May 20, 2008Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Masahiko Kakizawa, Mayumi Kimura, Hironori Mizuta, Ichiro Hayashida
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Publication number: 20070235061Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.Type: ApplicationFiled: October 13, 2004Publication date: October 11, 2007Applicant: WAKO PURE CHEMICAL INDUSTRIES, LTD.Inventors: Hironori Mizuta, Masahiko Kakizawa, Ichiro Hayashida
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Publication number: 20060154838Abstract: The present invention relates to a liquid cleaner for a semiconductor substrate on which metal wiring may be provided, comprising each component of a chelating agent or a salt thereof shown by the following general formula (1), an alkaline compound and pure water, wherein pH is 8 to 13: (wherein, Y1 and Y2 are lower alkylene groups, n is an integer of 0 to 4, at least 4 of R1 to R4 and n R5s are alkyl groups having phosphonic acid group(s) and the rest are alkyl groups) and a cleaning method using the same. The present invention provides a liquid cleaner which can efficiently remove fine particles or impurities derived from various metals at semiconductor substrate surface, even when used after a process adopting an alkaline polishing agent or alkaline etching liquid, without generating problems of causing difficult-to-remove gelled particles at the substrate surface or easy generation of rough semiconductor substrate surface, and a cleaning method using the same.Type: ApplicationFiled: November 7, 2003Publication date: July 13, 2006Applicant: WAKO PURE CHEMICAL INDUSTRIESInventors: Ichiro Hayashida, Hironori Mizuta, Takehisa Kato
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Publication number: 20060151854Abstract: A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a chelating agent, an alkali compound, silicon dioxide and water. The rinsing composition includes a chelating agent, an alkali compound and water. The chelating agent contained in the polishing composition and the rinsing composition is an acid represented by the following chemical formula (1) or a salt thereof. In the chemical formula (1), each of Y2 and Y3 represents an alkylene group, n is an integer of 0 to 4, each of 4+n substituents represented by R8 to R12 is an alkyl group. At least four of the alkyl groups have a phosphonic acid group.Type: ApplicationFiled: November 7, 2003Publication date: July 13, 2006Inventors: Akihiro Kawase, Toshihiro Miwa, Kenji Sakamoto, Ichiro Hayashida
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Publication number: 20040077512Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same.Type: ApplicationFiled: October 14, 2003Publication date: April 22, 2004Applicant: WAKO PURE CHEMICAL INDUSTRIES, LTD.Inventors: Masahiko Kakizawa, Ken-Ichi Umekita, Ichiro Hayashida
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Patent number: 6716803Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.Type: GrantFiled: August 8, 2001Date of Patent: April 6, 2004Assignee: Wako Pure Chemcial Industries, Ltd.Inventors: Masahiko Kakizawa, Ken-ichi Umekita, Ichiro Hayashida
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Publication number: 20030083214Abstract: A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiO2 of the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface at the Cu-CMP step.Type: ApplicationFiled: August 27, 2002Publication date: May 1, 2003Inventors: Masahiko Kakizawa, Mayumi Kimura, Hironori Mizuta, Ichiro Hayashida
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Patent number: 6534458Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.Type: GrantFiled: November 16, 2000Date of Patent: March 18, 2003Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Masahiko Kakizawa, Ken-ichi Umekita, Ichiro Hayashida
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Patent number: 6514921Abstract: Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.Type: GrantFiled: September 11, 2000Date of Patent: February 4, 2003Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Masahiko Kakizawa, Osamu Ichikawa, Ichiro Hayashida
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Patent number: 6410494Abstract: Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.Type: GrantFiled: February 22, 2001Date of Patent: June 25, 2002Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Masahiko Kakizawa, Osamu Ichikawa, Ichiro Hayashida
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Publication number: 20020016272Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same.Type: ApplicationFiled: August 8, 2001Publication date: February 7, 2002Applicant: WAKO PURE CHEMICAL INDUSTRIES, LTD.Inventors: Masahiko Kakizawa, Ken-Ichi Umekita, Ichiro Hayashida
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Patent number: 6310019Abstract: This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. The said cleaning agent and the method have made it possible to control a speed of etching on silicone oxide so as to remove impurities adsorbed on copper wirings and silicone oxide on a surface of a semi-conductor substrate having copper wirings on its surface, such as copper oxides and particles, without causing corrosion or oxidation of copper wirings nor causing roughness on the surface.Type: GrantFiled: July 5, 2000Date of Patent: October 30, 2001Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Masahiko Kakizawa, Ken-ichi Umekita, Ichiro Hayashida