Abstract: Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.

Abstract: Removing particles and metallic contaminants without corrosing the metallized wirings and without giving adverse effect of planarization on the semiconductor substrate surface can be effectively achieved by use of a cleaning agent which comprises an organic acid having at least one carboxyl group and a complexing agent having chelating ability.

Abstract: The concentration of Al on silicon surface is reduced to lose its influence on the growth rate of an oxide film during thermal oxidation when semiconductor surface treatment is carried out by a process for treating semiconductor surfaces which comprises a step of cleaning surfaces of semiconductors with a semiconductor surface treating agent comprising an inorganic or organic alkali, hydrogen peroxide and water as major components, and a step of rinsing the resulting surfaces with ultra-pure water, at least one of the semiconductor surface treating agent and the ultra-pure water containing as a complexing agent a compound having three or more ##STR1## groups in the molecule or a salt thereof.

Abstract: The concentration of Al on silicon surface is reduced to lose its influence on the growth rate of an oxide film during thermal oxidation when semiconductor surface treatment is carried out by a process for treating semiconductor surfaces which comprises a step of cleaning surfaces of semiconductors with a semiconductor surface treating agent comprising an inorganic or organic alkali, hydrogen peroxide and water as major components, and a step of rinsing the resulting surfaces with ultra-pure water, at least one of the semiconductor surface treating agent and the ultra-pure water containing as a complexing agent a compound having three or more ##STR1## groups in the molecule or a salt thereof.

Abstract: A combination of a first surface treating solution comprising an inorganic or organic alkali such as ammonia or a quaternary ammonium hydroxide, hydrogen peroxide, water and a second surface treating solution of ultra-pure water, at least one of the first and second surface treating solutions containing as a complexing agent a compound having one or more phosphonic acid groups in the molecule and showing chelating ability, or an oxidized form thereof, or polyphosphoric acid or a salt thereof, is effective for making semiconductor surfaces free from harmful metallic impurities such as Fe, Al, Zn, etc.