Abstract: A method of adjusting heat uniformity on a wafer mounting surface of a wafer mount having a ceramic base including the wafer mounting surface which can heat a wafer through energization and a cooling plate includes: a) preparing the wafer mount including the cooling plate including: a base including a flow path of a coolant; and a lid detachable from the base; b) measuring a temperature distribution with the lid being attached on the base while heating through the energization and cooling; c) detaching the lid and locally adjusting a shape of the flow path when the temperature distribution does not satisfy a predetermined criterion; and d) remeasuring the temperature distribution after adjusting the shape of the flow path, with the lid being attached on the base while heating through the energization and cooling, wherein the steps c) and d) are repeated until the remeasured temperature distribution satisfies the criterion.

Abstract: The wafer placement table includes a ceramic plate and a conductive substrate. The ceramic plate includes a plate annular portion at an outer circumference of a plate central portion having a wafer placement surface. The plate annular portion has an annular focus ring placement surface. The conductive substrate is provided on a lower surface of the ceramic plate and used as a radio-frequency source electrode. At the same height from the focus ring placement surface in the plate annular portion, a focus ring attraction electrode and a focus-ring-side radio-frequency bias electrode to which a bias radio frequency is supplied are embedded.

Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate provided on a lower surface side of the ceramic plate; an electrically conductive bonding layer that bonds the ceramic plate with the electrically conductive plate; a gas intermediate passage embedded in the electrically conductive bonding layer or provided at an interface between the electrically conductive bonding layer and the electrically conductive plate; a plurality of gas supply passages extending from the gas intermediate passage through the electrically conductive bonding layer and the ceramic plate to the wafer placement surface; and a gas introduction passage provided so as to extend through the electrically conductive plate and communicate with the gas intermediate passage, the number of the gas introduction passages being smaller than the number of the gas supply passages communicating with the gas intermediate passage.

Abstract: A wafer placement table has a wafer placement surface that allows a wafer to be placed thereon. The wafer placement table includes a ceramic substrate having a built-in electrode, a cooling substrate including a refrigerant flow path, a metal joining layer that joins the ceramic substrate to the cooling substrate, and a plurality of small protrusions disposed on a reference plane of the wafer placement surface. The top surfaces of the small protrusions can support the lower surface of a wafer. The top surfaces of all the small protrusions are located on the same plane. In a flow path overlapping range of the wafer placement surface in which the wafer placement surface overlaps the refrigerant flow path in plan view, an area ratio of the small protrusions is minimized in a portion facing a most upstream portion of the refrigerant flow path.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base having a refrigerant flow channel, and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a distance from a ceiling surface of the refrigerant flow channel to the wafer placement surface at a most downstream part of the refrigerant flow channel is shorter than the distance at a most upstream part of the refrigerant flow channel.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode; a cooling base having a refrigerant flow channel; and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a cross-sectional area of the refrigerant flow channel at a most downstream part of the refrigerant flow channel is less than the cross-sectional area at a most upstream part of the refrigerant flow channel.

Abstract: An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

Abstract: An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.

Abstract: An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

Abstract: An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.

Abstract: An electrostatic chuck with a heater includes: a base formed of a sintered body containing alumina; an ESC electrode provided in an upper portion side in the base; and a resistance heating body embedded in a lower portion side in the base. The base is composed of a dielectric layer from the ESC electrode to an upper surface of the base, and of a support member from the ESC electrode to a lower surface of the base. In the support member, a carbon content differs between an ESC electrode neighborhood in contact with the dielectric layer and a lower region below the ESC electrode neighborhood, a carbon content in the dielectric layer is 100 wt ppm or less, the carbon content in the ESC electrode neighborhood is 0.13 wt % or less, the carbon content in the lower region is 0.03 wt % or more and 0.5 wt % or less, and the carbon content in the ESC electrode neighborhood is smaller than the carbon content in the lower region. The resistance heating body contains niobium or platinum.

Abstract: A heating device has a ceramic base with a heating surface, and a heating body embedded in the ceramic base. The heating device includes a thermal conductive member positioned between the heating surface and the heating body in the ceramic base. The thermal conductive member has a thermal conductivity that is higher than the ceramic base and as such, the heating device achieves superior temperature uniformity of a heated object particularly in a semiconductor device manufacturing process.

Abstract: An electrostatic chuck includes a ceramic base having an electrode embedded in vicinity to a holding face for holding a substrate. On a back side of this ceramic base, provided are a terminal connected to the electrode, a wafer temperature control member, and an insulating member for insulating the temperature control member from the terminal. This insulating member has a flange portion on its end portion in contact with the ceramic base, and is made of highly thermal conductive ceramics.

Abstract: A heating apparatus 10 includes a ceramic base 11 having a heating surface 11a and provided with a resistance heating body 12 embedded therein, and a temperature adjusting member 21 fixedly fastened proximal to a back surface of the ceramic base 11. A heat conductive member 14 having a thermal conductivity higher than the ceramic base 11 is provided between the heating surface of the ceramic base 11 and the resistance heating body 12. A gas is introduced to an air gap 31 between the ceramic base 11 and the temperature adjusting member 21 while controlling the gas pressure.

Abstract: A heating device has a ceramic base with a heating surface, and a heating body embedded in the ceramic base. The heating device includes a thermal conductive member between the heating surface and the heating body in the ceramic base. The thermal conductive member has thermal conductivity higher than the ceramic base. The present, heating device achieves superior temperature uniformity of a heated object, particularly in the semiconductor device manufacturing process.

Abstract: An electrostatic chuck including lower and upper regions of a ceramic base, an embedded electrode and a resin film formed on the surface of the base. Volume resistivity of the upper region is 1×109 ?·cm to 1×1012 ?·cm, surface roughness of the surface of the upper region is 0.4 ?m or less in centerline average roughness Ra, and the resin film is made of denatured fluorine resin. A thickness of the resin film is 1 ?m or more, variations of the thickness of the resin film are ±30% or less, static friction and dynamic friction coefficients of a surface of the resin film is 0.2 or less, hardness of the resin film is 3H to F in a pencil method, and a contact angle of the resin film with water is 85° or more.

Abstract: An electrostatic chuck with a heater includes: a base formed of a sintered body containing alumina; an ESC electrode provided in an upper portion side in the base; and a resistance heating body embedded in a lower portion side in the base. The base is composed of a dielectric layer from the ESC electrode to an upper surface of the base, and of a support member from the ESC electrode to a lower surface of the base. In the support member, a carbon content differs between an ESC electrode neighborhood in contact with the dielectric layer and a lower region below the ESC electrode neighborhood, a carbon content in the dielectric layer is 100 wt ppm or less, the carbon content in the ESC electrode neighborhood is 0.13 wt % or less, the carbon content in the lower region is 0.03 wt % or more but 0.5 wt % or less, and the carbon content in the ESC electrode neighborhood is smaller than the carbon content in the lower region. The resistance heating body contains niobium or platinum.

Abstract: An electrostatic chuck includes a ceramic base having an electrode embedded in vicinity to a holding face for holding a substrate. On a back side of this ceramic base, provided are a terminal connected to the electrode, a wafer temperature control member, and an insulating member for insulating the temperature control member from the terminal. This insulating member has a flange portion on its end portion in contact with the ceramic base, and is made of highly thermal conductive ceramics.

Abstract: An electrostatic chuck includes: a base body; an electrode formed on the base body and generating coulomb force; and a dielectric layer formed on the base body and electrode, having a plurality of projections on a first main face on the side supporting a substrate attracted by the coulomb force, and supporting the substrate on the upper surfaces of these projections. The projections are arranged at substantially uniform intervals. The surface roughness (Ra) of the projection upper faces is 0.5 ?m or smaller. The height of the projections is 5 to 20 ?m. The relation A1/2×B2>200 is satisfied where A (number/100 cm2) is the number of the projections per unit area of 100 cm2 in the first main face, and B (?m) is the height of the projections.

Abstract: An electrostatic adsorption device has a dielectric layer, electrodes, a cooling member and an insulating adhesive. The dielectric layer is made of a ceramic dielectric material and has an adsorption face and a back face. The electrodes are provided on the back face of the dielectric layer and gaps are defined between the portions of the electrodes. The insulating adhesive is provided between the back face of the dielectric layer and the cooling member. The insulating adhesive covers the electrodes and the back face and is provided in the gaps.