Abstract: Provided is an optical system which may acquire a hyperspectral image by acquiring a spectral image of an object to be measured, which includes, to collect spectral data and train the neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, a slit moving to scan the incident image and passing and outputting a part of the formed image, and a first optical part obtaining spectral data by splitting light of the image received through the slit by wavelength. Also, the system includes, to decompose overlapped spectral data and to infer hyperspectral image data through the trained neural network, an image forming part forming an image from an object to be measured and transmitting collimated light, and a first optical part obtaining spectral data by splitting light of the received image by wavelength.

Abstract: A semiconductor device includes a substrate, a first active pattern disposed on the substrate, a second active pattern stacked on the first active pattern, a first gate structure extending to intersect the first active pattern and the second active pattern, a second gate structure spaced apart from the first gate structure and extending to intersect the first active pattern and the second active pattern, a first epitaxial pattern interposed between the first gate structure and the second gate structure, and connected to the first active pattern, a second epitaxial pattern interposed between the first gate structure and the second gate structure, and connected to the second active pattern, an insulating pattern interposed between the first epitaxial pattern and the second epitaxial pattern, and a semiconductor film interposed between the insulating pattern and the second epitaxial pattern, the semiconductor film extending along a top surface of the insulating pattern.

Abstract: A semiconductor device includes an active pattern on a substrate extending in a first horizontal direction, a gate electrode on the active pattern extending in a second horizontal direction, a source/drain region on the active pattern, an upper source/drain region apart from the lower source/drain region, a lower source/drain between upper and lower source/drain regions and connected to the lower source/drain region, an upper source/drain connected to an upper source/drain region, an interlayer insulating layer surrounding the upper source/drain region, a through-via on opposing sidewalls in the second horizontal direction extending through the interlayer insulating layer in the vertical direction, the through-via being spaced from the upper source/drain region and upper source/drain contact in the second horizontal direction, the through-via being connected to the lower source/drain contact, and a dam structure on each of the opposing sidewalls in the horizontal direction of the upper source/drain region.

Abstract: Disclosed herein are a garbage collection method and apparatus. The garbage collection method includes when an area dynamically allocated through a malloc( ) function or a new operator of a standard C library is deallocated through a free( ) function or a delete operator, inserting the deallocated area into a quarantine list, recording a base address and an end address of each of areas inserted into the quarantine list in a CSR_quarantined_chunks register, finding a physical address of a memory page used by a processor and searching data in the memory page for a value included in a quarantined area of the CSR_quarantined_chunks register, when a value included in the quarantined area is not present, setting a state flag bit of the register to 0, and deleting an area which the state flag bit is 0 from the quarantine list, and inserting the area into a free list.

Abstract: Provided are a tricyclodecane dimethanol composition, in which a ratio of structural isomers is controlled, and a preparation method thereof.

Abstract: Disclosed are an underwater optical communication aiming method and apparatus. The underwater optical communication aiming apparatus may include an optical communication module configured to transmit and receive laser beams and a plurality of acoustic modules spaced apart from one another at given intervals, disposed around the optical communication module, and configured to find a direction or relative distance of a counterpart light source under water. A direction of the optical communication module may be aimed at a counterpart light source found through the acoustic module in order to communicate with the counterpart light source by using the optical communication module.

Abstract: The present invention relates to a composition for preventing, improving, or treating diseases related to advanced glycation end products, comprising an indole derivative or a pharmaceutically acceptable salt thereof. Specifically, the composition of the present invention possesses the effect of trapping methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.

Abstract: The present invention relates to a novel indole derivative and a use thereof. The novel indole derivative according to the present invention traps methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.

Abstract: A semiconductor device includes a substrate, a first sheet pattern on the substrate, a gate electrode on the substrate and surrounding the first sheet pattern, a first source/drain pattern and a second source/drain pattern respectively connected to a first end and a second end of the first sheet pattern, a contact blocking pattern on a lower side of the second source/drain pattern, a first source/drain contact extending in a first direction and connected to the first source/drain pattern, and a second source/drain contact connected to the second source/drain pattern and extending in the first direction to contact an upper surface of the contact blocking pattern. A depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact may be greater than a depth from the upper surface of the gate electrode to the upper surface of the contact blocking pattern.

Abstract: An encoding/decoding apparatus and method for controlling a channel signal is disclosed, wherein the encoding apparatus may include an encoder to encode an object signal, a channel signal, and rendering information for the channel signal, and a bit stream generator to generate, as a bit stream, the encoded object signal, the encoded channel signal, and the encoded rendering information for the channel signal.

Abstract: The present disclosure relates to a polycarbonate resin composition, and more particularly, to a polycarbonate resin composition containing 90 wt % to 99 wt % of a polycarbonate resin, 0.3 wt % to 0.7 wt % of an anthraquinone-based black dye, and 0.2 wt % to 1.0 wt % of an acrylic polymeric chain extender, and a molded article containing the same.

Abstract: Disclosed is an interface system including a first neuron cluster that outputs a first neuron signal including a first neuron request and first neuron data by performing a first arithmetic operation, and a first interface circuit that stores the first neuron data and outputs a first response, in response to the first neuron request. The first neuron cluster outputs a second neuron signal including a second neuron request and second neuron data by performing a second arithmetic operation, in response to the first response. Before the first data is transmitted to a second neuron cluster different from the first neuron cluster, the first interface circuit outputs the first response in response to a fact that the first neuron data is stored.

Abstract: A manufacturing method for a semiconductor device, includes: forming a first gate structure and a second gate structure on a substrate; forming a deep trench isolation (DTI) hard mask on the first and second gate structures; forming a deep trench isolation disposed between the first gate structure and the second gate structure; depositing a first undoped oxide layer in the deep trench isolation; performing a first etch-back process on the first undoped oxide layer to remove a portion of the undoped oxide layer; depositing a first deep trench isolation (DTI) gap-fill layer on a remaining portion of the undoped oxide layer, and performing a second etch-back process on the first DTI gap-fill layer; depositing a second DTI gap-fill layer to seal the deep trench isolation, and forming a planarized second DTI gap-fill layer by a planarization process; and depositing a second undoped layer on the planarized second DTI gap-fill layer.

Abstract: Disclosed are a fingerprint forgery detection device and a method of operating the same. The fingerprint forgery detection device includes a memory that stores a first feature signal including biological channel feature information of a user, a transmitter including at least one transmission electrode for transmitting a pulse signal to the user, a receiver including at least one reception electrode for receiving a biological channel response signal in response to the transmitted pulse signal, and a signal processor for processing the biological channel response signal to detect whether a fingerprint is forged, and at least one processor that controls the memory, the transmitter, and the receiver.

Abstract: A coil component includes a body having a first surface, and a first end surface and a second end surface connected to the first surface and opposing each other in a length direction; a support substrate disposed inside the body; a coil portion comprising a first coil pattern and first and second lead-out patterns, each disposed on a first surface of the support substrate; first and second slit portions, respectively defined on edge portions of the first surface of the body to expose the first and second lead-out patterns; and first and second external electrodes disposed on the first and second slit portions to be connected to the first and second lead-out patterns. At least one of the first and second lead-out patterns has a thickness greater than a thickness of each of the first coil pattern and the first dummy lead-out pattern.

Abstract: Disclosed is an amplification circuit, which includes a first amplifier that receives an external signal and performs first band pass filtering on the external signal to output a first filter signal, and a second amplifier that receives the first filter signal and performs second band pass filtering on the first filter signal to output a second filter signal, and a frequency pass bandwidth of the second band pass filtering is narrower than a frequency pass bandwidth of the first band pass filtering.

Abstract: Disclosed is an apparatus and method for processing a multichannel audio signal. A multichannel audio signal processing method may include: generating an N-channel audio signal of N channels by down-mixing an M-channel audio signal of M channels; and generating a stereo audio signal by performing binaural rendering of the N-channel audio signal.

Abstract: A grinding wheel includes a plurality of wheel tips. The plurality of wheel tips include a plurality of diamond abrasive grains and a bonding material mixed with the diamond abrasive grains. The plurality of diamond abrasive grains have a ratio of a length in a long axis direction to a width in a short axis direction of 1:2.5 to 1:3.5 and includes edges or vertices having a grinding angle of 90° or less.

Abstract: Disclosed are a pearlescent pigment and a preparation method therefor, wherein the pigment has a multilayered structure including a low-refractive index material layer between high-refractive index material layers on a glass flake substrate and thus has high color intensity, various colors depending on the viewing angle, and an improved sparkling effect. The pearlescent pigment according to the present invention comprises: a glass flake substrate having a D10 value of 40-80 ?m, a D50 value of 160-250 ?m, and a D90 value of 350-600 ?m and a thickness of 500 nm or more; and a metal oxide layer coated on the substrate, the metal oxide layer having a structure of a first metal oxide layer/an intermediate oxide layer containing MgO·SiO2/a second metal oxide layer.

Abstract: A substrate processing apparatus includes a photoresist coater applying a photoresist film on a substrate, a humidifier increasing an amount of moisture in an ambient to which the photoresist film on the substrate is exposed, and an exposer irradiating the photoresist film exposed to the ambient having the increased amount of moisture with light. The humidifier is disposed between the photoresist coater and the exposer.