Abstract: A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer.

Abstract: A cleaning liquid composition is provided. More particularly, a cleaning liquid composition includes a transition metal compound represented by Chemical Formula 1 (see the detailed description of the present invention); and a hydrocarbon-based solvent, and a cleaning method of a polymerization apparatus using the same.

Abstract: A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.

Abstract: A biodegradable composite material which is produced by polymerizing a mixture of an aqueous dispersion of a natural polymer nanofiber including any one or more of a chitin nanofiber and a cellulose nanofiber, a dicarboxylic acid or a derivative thereof, and a diol. The biodegradable composite material has excellent biodegradable and mechanical properties.

Abstract: A display device may include a display panel including a plurality of pixels. An interpolator may be configured to generate a first voltage value corresponding to an input data value using a preset gamma lookup table. A gamma compensator may be configured to, based on a dimming value, select at least one of a plurality of preset dimming lookup tables, and may calculate a first output data value by correcting the first voltage value based on the at least one dimming lookup table. A gamma voltage generator may be configured to generate a plurality of gamma voltages having a linear relationship. A data driver may be configured to select a first gamma voltage from among the gamma voltages based on the first output data value, and provide the first gamma voltage, as a data voltage, to the display panel.

Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.

Abstract: Disclosed is an electric water pump including: a main body; a motor module including a rotor and a stator to generate a rotational force with power supplied from an outside; a pump module coupled to a first side of the main body, and including an impeller spinning by the rotational force of the motor module, an inlet to introduce a fluid as the impeller spins, and an outlet; a controller housing coupled to a second side of the main body and coupling with a controller for controlling the motor module; and a rotary shaft transmitting the rotational force from the motor module to the impeller, wherein the rotor is formed by performing insert injection-molding after stacking a rotor core and coupling with a magnet, and the rotary shaft is pressed into the rotor so that the rotor and the rotary shaft can be formed as a single body.

Abstract: The present invention relates to a catalyst composition containing: one or more selected from the group consisting of a transition metal compound represented by Formula 1 and a transition metal compound represented by Formula 3, and dialkyl L-tartrate; a cleaning liquid composition containing the catalyst composition; and a method of cleaning a polymerization apparatus using the cleaning liquid composition, wherein all the variables are described herein.

Abstract: Security check methods and systems over a user on a vehicle may be provided. The security check method including checking an allowed security right to a destination of a vehicle for entry, detecting a security right of a user on the vehicle, and performing a security process related to getting off the vehicle, based on the security right of the user and the allowed security right may be provided.

Abstract: The present invention relates to a modifier represented by Formula 1, a method for preparing the same, a modified conjugated diene-based polymer including a functional group derived from the modifier and having a high modification ratio, and a method for preparing the polymer.

Abstract: A storage device including a nonvolatile memory device that includes a nonvolatile memory cell array including a string including first and second memory cells stacked sequentially, and an OTP memory cell array that stores reference count values, the first and second memory cells respectively connected to first and second word lines; a controller including a processor that generates a read command for the first memory cell; a read level generator including a counter that receives the read command and calculates an off-cell count value of memory cells connected to the second word line, and a comparator that receives a first reference count value from the OTP memory cell array, compares the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell, and determines a read level of the first memory cell based on the threshold voltage shift.

Abstract: A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different metals; and polishing, by using the slurry composition, a polishing target surface at which the first metal film and the second metal film are exposed.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.

Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the plurality

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to an embodiment may comprise: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an aperture layer arranged on the active layer and comprising an opening; a second reflective layer arranged on the active layer; a transparent electrode layer arranged on the second reflective layer; and a metal electrode layer arranged on the transparent electrode layer. The transparent electrode layer may comprise a first area perpendicularly overlapping the opening and multiple second areas extending from the first area. The multiple second areas may be arranged outside the opening along the circumferential direction of the opening and spaced apart from each other. The multiple second areas may be arranged and spaced apart from each other so as to correspond to the circumference of the opening.

Abstract: A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.

Abstract: An embodiment relates to a light emitting device comprise a second electrode which includes indium tin oxide (ITO), an ohmic characteristic between a second semiconductor layer and the second electrode is improved and a driving voltage is also improved. An embodiment relates to a light emitting device comprise a capping layer that can overlap the second semiconductor layer with the second electrode interposed therebetween and include a material of which a difference in thermal expansion coefficient with the second semiconductor layer is 3 or less. Therefore, since the capping layer is electrically connected to the second electrode, delamination and lifting of an interface between the second electrode and the second semiconductor layer is prevented, and reliability of the light emitting device is improved.

Abstract: A display device may include a display panel including a plurality of pixels. An interpolator may be configured to generate a first voltage value corresponding to an input data value using a preset gamma lookup table. A gamma compensator may be configured to, based on a dimming value, select at least one of a plurality of preset dimming lookup tables, and may calculate a first output data value by correcting the first voltage value based on the at least one dimming lookup table. A gamma voltage generator may be configured to generate a plurality of gamma voltages having a linear relationship. A data driver may be configured to select a first gamma voltage from among the gamma voltages based on the first output data value, and provide the first gamma voltage, as a data voltage, to the display panel.

Abstract: A method of estimating an indoor location includes loading an image captured by a first terminal, recognizing a product by applying a first machine learning model based on machine learning to the loaded image, acquiring product information related to the product from the recognized product, estimating a location of the first terminal based on a database including location information of the product and the product information, and controlling the first terminal to display information related to the location on the first terminal. A neural network for processing an image is a deep neural network generated through machine learning, and the image is inputted and outputted in an Internet of things (IoT) environment using a 5G network.