Abstract: A separator for a rechargeable lithium battery includes: a substrate; and a coating layer on at least one side of the substrate, the coating layer including an acrylic-based copolymer obtained from polymerization of a (meth)acrylate salt and (meth)acrylonitrile, and a polyvinyl alcohol-based compound. A rechargeable lithium battery including the separator is also provided.

Abstract: A separator for a rechargeable lithium battery includes a substrate; and a coating layer positioned on at least one side of the substrate, wherein a thickness ratio of the coating layer relative to the total thickness of the substrate and the coating layer ranges from about 5% to about 50%, and a loading level of the coating layer ranges from about 1.4 g/m2 to about 9.8 g/m2, and a rechargeable lithium battery including the same is provided.

Abstract: A separator for a rechargeable lithium battery and a rechargeable lithium battery including the same, the separator including a substrate; and a coating layer on at least one side of the substrate, wherein the coating layer includes a polyvinylidene fluoride-containing compound, and an acryl-containing compound represented by the following Chemical Formula 1:

Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.

Abstract: A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.

Abstract: A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.

Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.

Abstract: Disclosed are a fermented ginseng berry Pleurotus ferulae product and a cosmetic composition containing the same. The fermented ginseng berry Pleurotus ferulae product is useful for anti-oxidation, anti-inflammation, collagen synthesis facilitation, skin wrinkle care, whitening, moisturizing, skin barrier improvement and atopy alleviation.

Abstract: Disclosed is a composition for skin external application containing a Pleurotus ferulae fruiting body extract, a Pleurotus ferulae mycelium extract or a liquid culture obtained by culturing the Pleurotus ferulae mycelium. More specifically, disclosed is a functional composition for skin external application containing 0.001 to 90.0% by weight of a Pleurotus ferulae fruiting body extract, a Pleurotus ferulae mycelium extract or a liquid culture obtained by culturing the Pleurotus ferulae mycelium, with respect to the weight of the composition, wherein the composition is potently effective in scavenging active oxygen, preventing aging, acting wrinkles, facilitating collagen synthesis, moisturizing skin, whitening skin, reducing skin irritation, preventing acne, alleviating atopy, providing anti-inflammation, preventing hair damage, preventing alopecia and improving hair growth.

Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.

Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

Abstract: A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.

Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

Abstract: A photosensitive compound whose size is smaller than conventional polymer for photoresist, and which has well-defined (uniform) structure, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula. Also, the present invention provides a photoresist composition comprising 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 10 to 5000 weight parts of an organic solvent. In the formula, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R? and R? are independently hydrocarbon group of 1 to 30 carbon atoms, preferably 2 to 20 carbon atoms, and R?? is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms, preferably 2 to 20 carbon atoms.

Abstract: The present invention relates to a display device using a microelectromechanical system (MEMS) and to a manufacturing method thereof. A display device using a MEMS includes a first substrate comprising a first index of refraction; a second substrate facing the first substrate; a reflective layer formed on the first substrate and having a first aperture; a transparent layer covering the first aperture and comprising a second refractive index; and a shutter arranged on the second substrate, wherein a difference between the first refractive index and the second refractive index is equal to or less than 0.1.

Abstract: The present invention relates to method for depletion of CD137 positive cells using an anti-CD137 antibody-toxin complex, and more particularly, to a method for selective depletion of CD137 positive cells, comprising the step of contacting an anti-CD137 antibody-toxin complex with the CD137 positive cells. The method for selective depletion of CD137 positive cells in accordance with the present invention can be useful to prevent or treat various diseases including immune diseases mediated by the activation of the CD137 positive cells because this method is excellent in delivering a complex of an anti-CD137 antibody, specific to CD137 molecules, and a toxin to CD137 expressing cells and selectively killing the CD137 positive cells alone and is also excellent in suppressing cell proliferation.

Abstract: A photosensitive compound whose size is smaller than conventional polymer for photoresist, and which has well-defined (uniform) structure, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula 1. Also, the photoresist composition comprises 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 200 to 5000 weight parts of an organic solvent. In the formula 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, and R and R? are independently a chain type or a ring type of aliphatic or aromatic hydrocarbon group of 1 to 30 carbon atoms.

Abstract: The present invention relates to a display device using a microelectromechanical system (MEMS) and to a manufacturing method thereof. A display device using a MEMS includes a first substrate comprising a first index of refraction; a second substrate facing the first substrate; a reflective layer formed on the first substrate and having a first aperture; a transparent layer covering the first aperture and comprising a second refractive index; and a shutter arranged on the second substrate, wherein a difference between the first refractive index and the second refractive index is equal to or less than 0.1.

Abstract: A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.