Abstract: A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.

Abstract: A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.

Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

Abstract: A single-package power meter is disclosed for measuring the power consumed by a load connected to an electrical conductor. The power meter is galvanically isolated from the electrical conductor through the use of magnetic sensors or through the combination of magnetic sensors and capacitors. Instantaneous power consumed at the load and other desired parameters are determined by measuring the voltage of the load and current flowing through the electrical conductor. Current is measured using a magnetic sensor to detect the magnetic field associated with the current flowing through the electrical conductor. Voltage is measured by one of two possible techniques involving magnetic sensors to measure the current flowing through a coil connected in parallel with a load, or through the use of a capacitively coupled voltage divider connected in parallel with the load.

Abstract: The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.

Abstract: A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region.

Abstract: The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions.

Abstract: The present invention discloses a design of a single-chip push-pull bridge sensor, composed of magnetoresistive elements, utilizing on-chip permanent magnets. The permanent magnets are oriented to preset magnetization directions of free layers of adjacent sensor bridge arms so that they point to different directions with respect the same sensing direction, enabling push-pull operation. The push-pull bridge sensor of the present invention is integrated on a single chip. Additionally, an on-chip coil is disclosed to reset or calibrate the magnetization directions of the free layers of the magnetoresistive elements.

Abstract: The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.

Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

Abstract: A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.

Abstract: A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs.

Abstract: A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.

Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

Abstract: A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.

Abstract: A transducer is disclosed for detecting the AC and DC voltage difference between two nodes in an electrical circuit and electronically transmitting the measured voltage difference to an electrical system that is electrically isolated from the common mode potential of the two nodes. The voltage drop between two points in a circuit under test is determined by detecting the current flowing through a resistive shunt coil connected in parallel to the test points. Current through the resistive shunt coil is linearly proportional to the voltage difference between the test points, and it is detected by using a magnetic sensor that is separated from the shunt coil by an insulating dielectric barrier. The transducer can be packaged in a standard integrated circuit package in order to provide a small and low cost voltage transducer for test, measurement, control, and signal-isolation applications.

Abstract: Nonvolatile resistive memory devices are disclosed. In some embodiments, the memory devices comprise multilayer structures including electrodes, one or more resistive storage layers, and separation layers. The separation layers insulate the resistive storage layers to prevent charge leakage from the storage layers and allow for the use of thin resistive storage layers. In some embodiments, the nonvolatile resistive memory device includes a metallic multilayer comprising two metallic layers about an interlayer. A dopant at an interface of the interlayer and metallic layers can provide a switchable electric field within the multilayer.

Abstract: Magnetic memory having separate read and write paths is disclosed. The magnetic memory unit includes a ferromagnetic strip having a first end portion with a first magnetization orientation, an opposing second end portion with a second magnetization orientation, and a middle portion between the first end portion and the second end portion, the middle portion having a free magnetization orientation. The first magnetization orientation opposes the second magnetization orientation. A tunneling barrier separates a magnetic reference layer from the middle portion forming a magnetic tunnel junction. A bit line is electrically coupled to the second end portion. A source line is electrically coupled to the first end portion and a read line is electrically coupled to the magnetic tunnel junction.

Abstract: A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.