Abstract: Provided is a compound of Chemical Formula 1: wherein: A is a benzene ring; X1 and X2 are each independently O or S; Y1 to Y3 are each independently N or CH, provided that at least one of Y1 to Y3 is N; Ar1 and Ar2 are each independently a substituted or unsubstituted: C6-?aryl or C2- 60 heteroaryl containing at least one of N, O, and S; R1 to R3 are each independently hydrogen, deuterium, halogen, cyano, nitro, amino, or a substituted or unsubstituted: C1-60 alkyl, C3-60 cycloalkyl, C2-60 alkenyl, C6-60 aryl, or C2-60 heteroaryl containing at least one of N, O, and S; and R?and R5 are each independently hydrogen, deuterium, halogen, cyano, nitro, amino, or a substituted or unsubstituted: C1-60 alkyl, C3-?cycloalkyl, C2-60 alkenyl, C6-60 aryl, or C2-60 heteroaryl containing at least one of N, O, and S, and an organic light emitting device including the same.

Abstract: A 3D semiconductor device including: a first level including a single crystal layer, a memory control circuit which includes a plurality of first transistors; a first metal layer overlaying the single crystal layer; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; second transistors which include a metal gate are disposed atop the third metal layer; third transistors disposed atop the second transistors; a fourth metal layer disposed atop the third transistors; and a memory array including word-lines, the memory array includes at least four memory mini arrays, each including at least four rows by at least four columns of memory cells, where each of the memory cells includes at least one of the second transistors or at least one of the third transistors, the memory control circuit includes at least one digital to analog converter circuit.

Abstract: A battery pack mounting structure of a vehicle includes: a frame side member of a chassis frame provided so that an upper end portion thereof is located at a position spaced downward by a predetermined reference downward distance from a step height set in consideration of ease of boarding of passengers; a battery case provided so that a battery accommodated in the battery case overlaps the frame side member in a horizontal direction thereof; a case side portion forming a side surface of the battery case, coupled to a lower side of the frame side member, and including a lower end portion aligned with a lowest ground height of the vehicle; and a case lower plate forming the battery case while supporting a lower side of the battery and disposed at a position spaced upwards from the lowest ground height.

Abstract: The present invention relates to a low energy radiation therapy system for superficial lesion treatment and an operation method thereof, the low energy radiation therapy system comprising: an optical scanner for acquiring 3D scanning data of a treatment region including a superficial lesion site; an irradiation unit configured to apply radiation to the treatment region; a calculation unit for calculating, on the basis of the 3D scanning data, a skin dose, energy of radiation, and a part-specific radiation amount adjustment value, and producing, according to the part-specific radiation amount adjustment value, shape data of a compensation unit to be provided at the end of the irradiation unit; and a 3D printer configured to three-dimensionally print and produce the compensation unit according to the shape data.

Abstract: Disclosed is a stable liquid formulation, comprising an antibody or antigen-binding portion thereof, an acetate buffer, glycine, and a surfactant, wherein the stable liquid formulation does not comprise at least one of sugar, a sugar alcohol and a metal salt, and the stable liquid formulation is still stable even upon high antibody content, and is superior in osmolality and viscosity, and subcutaneous administration thereof is possible.

Abstract: Disclosed herein are a biodegradable polymer microparticle for a filler, a freeze-dried body including the same, a manufacturing method thereof, and filler injection including the freeze-dried body. The freeze-dried body includes hydrophilic surface-treated biodegradable polymer microparticle and a biocompatible carrier, wherein the hydrophilic surface-treated biodegradable polymer microparticle has an average particle diameter (D50) of 20 to 50 ?m and is polydioxanone which has a carboxyl group on the surface thereof. The hydrophilic surface-treated biodegradable polymer microparticle is a plasma surface-treated product or a base surface-treated product using discharge of the biodegradable polymer microparticle. The content of the biocompatible carrier is 1 to 5 parts by weight based on 100 parts by weight of the freeze-dried body.

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

Abstract: A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states. A first region of the memory cell is in electrical contact with the floating body region. A second region of the memory cell is spaced apart from the first region and is also in electrical contact with the floating body region. A gate is positioned between the first and second regions. A back-bias region is configured to generate impact ionization when the memory cell is in one of the first and second states, and the back-bias region is configured so as not to generate impact ionization when the memory cell is in the other of the first and second states.

Abstract: A display device includes a first electrode disposed on a substrate, a pixel defining layer exposing at least a part of the first electrode and disposed on the substrate, a light emitting layer disposed on the first electrode, a second electrode disposed on the light emitting layer, and an encapsulation layer disposed on the second electrode, wherein the pixel defining layer includes an overlapping area overlapping the first electrode and a non-overlapping area not overlapping the first electrode, the overlapping area includes a first overlapping area spaced apart from the first electrode and facing the first electrode, and the encapsulation layer is at least partially disposed in a space between the first electrode and the pixel defining layer in the first overlapping area.

Abstract: The present disclosure relates to an interior material for a vehicle and a method for molding the interior material for the vehicle, and more specifically the method for molding an interior material for a vehicle according to the present disclosure includes heating a skin inserted into an upper end heater and a lower end heater spaced apart from each other; preforming the heated skin using an upper mold having a mold temperature set to have a set shape and a lower mold having a second mold temperature; and pressing the preformed skin and a core using a 1-1 mold and a 1-2 mold having set mold temperatures.

Abstract: An embodiment multi-way coolant valve includes an outer housing including first to third outer inlets, first to third outer outlets, and a pump mount portion coupled to one of the outer outlets, an inner housing rotatably provided within the outer housing and including penetration holes corresponding to the outer inlets and outlets, a coolant line defined by a selective connection of the penetration holes such that the outer inlets and outlets are selectively connected, pads interposed between an interior circumference of the outer housing and an exterior circumference of the inner housing at locations of the outer inlets and outlets, respectively, and a driving device connected to a rotation center of the inner housing to selectively rotate the inner housing within the outer housing, wherein the inner housing is configured to rotate by a preset interval according to a selected vehicle mode.

Abstract: A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) with increased on-state current obtained through a parasitic bipolar junction transistor (BJT) of the MOSFET. Methods of operating the MOSFET as a memory cell or a memory array select transistor are provided.

Abstract: A vehicle air conditioner for minimizing the leakage of air through a dual blocking structure between upper and lower flow paths, and having a dual blocking structure. An air-conditioning case having an inner air flow path is divided into an upper flow path and a lower flow path. A heat exchanger for cooling and a heat exchanger for heating are provided in the air flow path of the air-conditioning case. A member having through-holes is disposed downstream of the heat exchanger for heating in the flow direction of air and allows the air that has passed through the heat exchanger for heating to pass therethrough. The member having through-holes has a horizontal member dividing the upper flow path from the lower flow path. A leakage-preventing means is overlapped with the horizontal member so as to prevent the air in the upper flow path and the lower flow path from mixing.

Abstract: A compound of Chemical Formula 1, and an organic light emitting device comprising the same.

Abstract: A method to process a 3D device, the method including: providing a first substrate including a first level including a first single crystal silicon layer and a plurality of first transistors; providing a second substrate including a second level including a second single crystal silicon layer; performing an epitaxial growth of a SiGe layer on top of the second single crystal silicon layer; performing an epitaxial growth of a third single crystal silicon layer on top of the SiGe layer; forming a plurality of third transistors including the third single crystal silicon layer; forming a plurality of metal layers interconnecting the plurality of third transistors; and then performing a hybrid bonding of the second level onto the first level.

Abstract: The present disclosure relates to a transmission of an agricultural work vehicle, the transmission comprising: a pre-shift part for performing speed shifting on driving transmitted from an engine of an agricultural work vehicle; a clutch part connected to the pre-shift part so as to selectively output driving transmitted from the pre-shift part; an adjusting part connected to the clutch part so as to perform speed shifting on driving transmitted from the clutch part; and a subsequent shift part connected to the adjusting part so as to perform speed shifting on driving transmitted from the adjusting part.

Abstract: An embodiment vehicle body includes a front cross portion having a substantially uniform cross-section throughout its entire length, a rear cross portion spaced apart from the front cross portion, the rear cross portion having a substantially uniform cross-section throughout its entire length, and a connection structure connecting the front cross portion and the rear cross portion.

Abstract: A connector position alignment assembly includes a first part and a second part coupled to each other through a connector and including a guide portion aligning a position of the connector. The guide portion is provided with a guide pin and a guide boss including portions protruding toward each other, and the guide pin and the guide boss respectively protrude further than the connector, in a direction in which the first part and the second part face each other, such that a portion of the guide pin is accommodated in the guide boss before the connectors are coupled to each other.

Abstract: A 3D memory device, the device including: a first structure including a plurality of memory cells, where each memory cell of the plurality of memory cells includes at least one memory transistor, where each of the at least one memory transistor includes a source, a drain, and a channel; a plurality of memory-line pillars, where each memory-line pillar of the plurality of memory-line pillars is directly connected to a plurality of the source or the drain, where the plurality of memory-line pillars are vertically oriented, and where the at least one memory transistor is self-aligned to an overlaying another the at least one memory transistor, both being processed following a same lithography step; and a control level including a memory controller circuit, where the memory controller circuit includes a row buffer, where the control level is bonded to the first structure, and where the bonded includes hybrid bonding.

Abstract: A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.