Abstract: A display comprises a substrate and a light-emitting device disposed on the substrate, wherein the substrate comprises a semiconducting material and a circuit for controlling the light-emitted from the light-emitting device. A light-emitting device includes a light-emitting material comprising semiconductor nanocrystals and an electrode in electrical connection with the light-emitting material on a side thereof remote from the substrate.

Abstract: Nanocrystalline forms of metal oxides, including binary metal oxide, perovskite type metal oxides, and complex metal oxides, including doped metal oxides, are provided. Methods of preparation of the nanocrystals are also provided. The nanocrystals, including uncapped and uncoated metal oxide nanocrystals, can be dispersed in a liquid to provide dispersions that are stable and do not precipitate over a period of time ranging from hours to months. Methods of preparation of the dispersions, and methods of use of the dispersions in forming films, are likewise provided. The films can include an organic, inorganic, or mixed organic/inorganic matrix. The films can be substantially free of all organic materials. The films can be used as coatings, or can be used as dielectric layers in a variety of electronics applications, for example as a dielectric material for an ultracapacitor, which can include a mesoporous material. Or the films can be used as a high-K dielectric in organic field-effect transistors.

Abstract: An OFET on a pyroelectric or piezoelectric substrate, such as PVDF, can provide highly adaptable and manufacturable radiation or acoustic sensing. Local charge amplification can be provided, such to construct an array of sensing pixels, which can be configured in an active or passive matrix. A susceptor or guide element can be provided. Systems, devices, methods of making, and methods of using are among the examples described.

Abstract: An optical structure can include a nanocrystal on a surface of an optical waveguide in a manner to couple the nanocrystal to the optical field of light propagating through the optical waveguide to generate an emission from the nanocrystal.

Abstract: Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2%; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm2. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.

Abstract: Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials.

Abstract: An OFET includes a ferroelectric gate dielectric permitting electrical reprogramming, such as to implement an electrically re-programmable array logic (PAL) or a field-programmable gate array (FPGA). Methods of constructing such an OFET, PAL, or FPGA, can including roll printing. An OFET on a piezoelectric substrate provides local amplification in an active matrix. Methods of constructing such an OFET on a piezoelectric substrate can including rolling printing. Techniques permit direct measurement of trap distribution, such as across the channel length of an OFET device. Techniques permit direct measurement of the size and location of an electrically active grain structure in OFET devices. Techniques permit confirmation of the mechanism of operation of a number of OFET techniques, including use of silanes or thiols, or OFET operation or aging. Techniques provide an internal circuit probe, such as for a ferroelectric gate dielectric OFET or a piezoelectric substrate OFET, for example.

Abstract: An OFET on a pyroelectric or piezoelectric substrate, such as PVDF, can provide highly adaptable and manufacturable radiation or acoustic sensing. Local charge amplification can be provided, such to construct an array of sensing pixels, which can be configured in an active or passive matrix. A susceptor or guide element can be provided. Systems, devices, methods of making, and methods of using are among the examples described.

Abstract: Disclosed is an apparatus and method for a compact, rugged, and inexpensive spectrometer that will make possible a range of new applications for optical spectroscopy including point-of-care medical devices, personal monitors, and ubiquitous environmental sensing. Embodiments of the disclosure include silicon photodetectors where incident light passes through a layer of an inexpensive, absorbing thin film. In one embodiment, one or more photodetectors may be used where a series of absorbing thin film layers are passed over the photodetectors. In another embodiment, an absorbing thin film layer is placed over one or more photodetectors where the absorptivity of the thin film layer is different for each photodetector.

Abstract: Disclosed is an apparatus and method for a compact, rugged, and inexpensive spectrometer that will make possible a range of new applications for optical spectroscopy including point-of-care medical devices, personal monitors, and ubiquitous environmental sensing. Embodiments of the disclosure include silicon photodetectors where incident light passes through a layer of an inexpensive, absorbing thin film. In one embodiment, one or more photodetectors may be used where a series of absorbing thin film layers are passed over the photodetectors. In another embodiment, an absorbing thin film layer is placed over one or more photodetectors where the absorptivity of the thin film layer is different for each photodetector.

Abstract: A field effect transistor (FET) includes a substrate, and a gate layer formed on the substrate. An oxygen plasmarized polymeric gate dielectric is formed on the gate layer so as to increase the threshold voltage of the OFET. A semiconductor layer is formed on the oxygen plasmarized polymeric gate dielectric.

Abstract: A patterned field emission device fabricated using conducting or semiconducting organic materials is described.

Abstract: A patterned field emission device fabricated using conducting or semiconducting organic materials is described.

Abstract: A method for improving the performance of an organic thin film field effect transistor including the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.

Abstract: A patterned field emission device fabricated using conducting or semiconducting organic materials is described.

Abstract: A method for patterning a chemically sensitive organic thin film such as pentacene comprising (a) forming a protective material layer on the surface of a chemically sensitive organic thin film, said protective material layer being chemically resistant; (b) forming a photoresist on an exposed surface of said protective material layer; (c) patterning the photoresist; and (d) transferring the pattern to the protective material layer and the chemically sensitive organic thin film by dry etching.

Abstract: A method for improving the performance of an organic thin film field effect transistor comprising the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.

Abstract: A method for improving the performance of an organic thin film field effect transistor comprising the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.

Abstract: An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.