Abstract: A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.

Abstract: A description is given of a device comprising a first semiconductor chip, a molding compound layer embedding the first semiconductor chip, a first electrically conductive layer applied to the molding compound layer, a through hole arranged in the molding compound layer, and a solder material filling the through hole.

Abstract: A method and apparatus for encapsulating items such as electronic devices. A mold material is dispensed onto the electronic device and the device is situated between first and second molds. One mold is moved towards the other so as to vary the size of a cavity defined by the first and second molds. A vacuum is applied to the cavity and the vacuum is varied in response to the size of the cavity. The vacuum can be varied in response to a predetermined vacuum profile. For example, in certain embodiments the vacuum is varied in response to the position of the first mold relative to the second mold, wherein the vacuum is increased as the cavity height is reduced.

Abstract: A semiconductor device with surface-mountable outer contacts and to a process for producing it is disclosed. In one embodiment, surface-mountable outer contacts are arranged on outer contact connection surfaces on the underside of the semiconductor device. In their respective center region, the outer contact connection surfaces have at least one recess which has a dovetail-like profile, the areal extent of the recess being smaller than the maximum cross section of an outer contact. In a one process, the recess in the center region is achieved by selective deposition of correspondingly patterned metal layers.

Abstract: For the vertical electrical connection of a number of components, an electronic structure with at least two components has solderable connecting elements, which include at least one socket element and a solder ball stacked on the socket element. The socket element has a cylindrical core of an electrically conducting first material with a lateral surface, a bottom surface and a top surface. The core is surrounded with a cladding of an electrically insulating second material in such a way that the lateral surface of the core is covered by the cladding and the top surface and the bottom surface are kept free of the cladding.

Abstract: An external contact material for external contacts of a semiconductor device and a method for producing the same are described. The external contact material includes a lead-free solder material. Provided in the solder material is a filler which forms a plurality of gas pores and/or has plastic particles which are arranged in the volume of the solder material.

Abstract: A carrier sheet with an adhesive film includes a heat-resistant base film with an upper side and an underside, and a thermoactive adhesive layer arranged on the underside of the base film and oriented toward the carrier sheet. The upper side of the base film includes an adhesive layer with semiconductor chips fixed on it, the semiconductor chips being surrounded by deactivated regions of the adhesive layer of the film upper side.

Abstract: A semiconductor device with surface-mountable outer contacts and to a process for producing it is disclosed. In one embodiment, surface-mountable outer contacts are arranged on outer contact connection surfaces on the underside of the semiconductor device. In their respective center region, the outer contact connection surfaces have at least one recess which has a dovetail-like profile, the areal extent of the recess being smaller than the maximum cross section of an outer contact. In a one process, the recess in the center region is achieved by selective deposition of correspondingly patterned metal layers.