Abstract: A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

Abstract: An improved electrophotographic photosensitive member having a desired light receiving layer prepared by the use of a substance capable of contributing to form a deposited film and an electronically oxidizing agent in the absence of a plasma. A process and an apparatus for preparing the electrophotographic photosensitive member.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: A process for forming a deposited film according to chemical vapor deposition on a substrate comprises the first step of forming an amorphous film by reacting an excited species (AY) containing an atom (A) which becomes the constituent constituting said deposited film and an atom (Y) with high electronegativity with an active species (Z) which is chemically reactive with said excited species (AY) at a first ratio and the second step of forming a polycrystalline film by reacting said excited species (AY) with said active species (Z) at a second ratio which is different from said first ratio.

Abstract: A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming deposited film by introducing into a reaction space a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming said deposited film on a substrate previously position in a film forming space spatially communicated with said reaction space with the use of at least one precursor of these precursors as the feeding source for the constituent element of said deposited film, said method comprising the step of increasing the proportion of the amount of said gaseous starting material introduced relative to the amount of said gaseous halogenic oxidizing agent introduced in said reaction space.

Abstract: A multilayer photoconductive material wherein at least two kinds of alloys selected from the group consisting of amorphous silicon or germanium alloys comprising silicon and/or germanium and at least one element selected from the group consisting of carbon, fluorine and hydrogen are alternately laminated, the kinds of alloys of the adjacent layers being different from each other and the total number of the layers being at least 6, which has exhibits a high response speed and can be easily controlled in sensitivity not only to long wavelength light but also to short wavelength light.

Abstract: A deposited film is formed by introducing a gaseous starting material, a gaseous halogenic oxidizing agent and at least one oxygen or nitrogen type oxidizing agent into a reaction space to form excited precursors and thereafter forming a deposited film on a substrate in a film forming space employing the excited precursors. If desired, a gaseous material containing a component for valence electron control can be added to the reaction space.

Abstract: A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

Abstract: An apparatus for forming a deposited film by bringing gaseous starting materials for forming deposited film contact with a gaseous halogenic oxidizing agent which exerts oxidative effect on the starting materials, comprises, in a chamber for forming the deposited film, gas discharge means comprised of a gas discharge pipe for discharging the gaseous starting materials and a gas discharge pipe for discharging the halogenic oxidizing agent and means for disposing supports on which a plurality of cylindrical supports for depositing the film thereon are arranged around the gas discharge means.

Abstract: A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.

Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor depostion method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming a deposited film comprises introducing into a reaction space containing a substrate (a) a gaseous starting material for the formation of a deposited film, (b) a gaseous oxidizing agent, and optionally (c) a gaseous material containing a valence electron controller component; effecting chemical contact therebetween to form a plurality of precursors including precursors in an excited state; and forming a deposited film on the substrate with at least one of the precursors.