Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, said first and second layer regions being provided successively from the side of said support.

Abstract: A television camera tube using a target comprising an electrically-conductive support, a blocking layer composed of a n-type amorphous silicon semiconductor, provided on the electrically-conductive support, and a light-sensitive layer composed of amorphous silicon provided on the blocking layer.

Abstract: A radiation-sensitive tube is described having a target comprising (1) an electrically conductive support, (2) at least one layer composed of insulative an amorphous silicon represented by the formula Si.sub.1-x N.sub.x wherein 1>x, y and z.gtoreq.0 and 1>x+y+z>0 and (3) a photoconductive layer composed of amorphous silicon.

Abstract: A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances is characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.

Abstract: A process for forming a deposition film on a substrate comprising introducing a deposition film forming material in gaseous state into a deposition chamber, the inside pressure of which is reduced, and causing an electric discharge to take place in a gaseous atmosphere of said deposition film forming material, said process comprising introducing a starting material in gaseous state for preparing said deposition film forming material into a discharge reaction chamber, causing a discharge to take place in a gaseous atmosphere of said starting material to give rise to a reaction of said starting material, and introducing the resulting reaction product into said deposition chamber through a transport means connecting said discharge reaction chamber with said deposition chamber, by which the steps including from the step of preparing said deposition film forming material to the step of forming said deposition film are effected continuously.

Abstract: A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and oxygen atoms as constituents.

Abstract: A process for producing photoconductive members comprises evacuating a deposition chamber possible to evacuate, to a prescribed degree of vacuum; introducing silicon hydride compound gas, halogen-containing silicon compound gas, and diluent gas in a volume flow ratio of 4-30:2-60:36-81, respectively, into said deposition chamber; forming a gas plasmic atmosphere by generating glow discharge in said surrounding gas mixture; thereby forming, on the surface of a support, for producing the photoconductive member, which has been arranged previously in said deposition chamber, a photoconductive layer constructed of an amorphous material comprising silicon atoms as matrix.

Abstract: A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing hydrogen atoms or halogen atoms in a matrix of silicon atoms, and an intermediate layer constituted of an electrically insulating oxide having a layer thickness of 30 to 1000A, which is provided between said support and said photoconductive layer.

Abstract: A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents.

Abstract: A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms a constituents.

Abstract: A photoconductive member which is stable in its electrical and optical characteristics, not influenced by circumstances for its use, and possesses extremely high sensitivity to light, remarkably high anti-photo-fatigue property, and deterioration-resistant against repeated use, the photoconductive member comprising a substrate; a photoconductive layer; a barrier layer between the substrate and the photoconductive layer, and having a function of substantially inhibiting injection of carriers from the substrate side to the photoconductive layer; and a depletion layer region formed in the interfacial region of the photoconductive layer and the barrier layer, wherein the photoconductive layer and the barrier layer are made of an amorphous material with silicon as a matrix and hydrogen as a constituent atom, a part of the barrier layer is present between the depletion layer region and the substrate in such a thickness that, in order to inhibit injection of the carriers having the same polarity as that of minority

Abstract: Disclosed is a laminated photosensitive material for electrophotography, which comprises a conductive substrate, an undercoat layer formed of a composition comprising a resin binder having no substantial photoconductivity and photoconductive zinc oxide in an amount of 1 to 20 parts by weight per part by weight of the resin binder, an intermediate layer formed of a composition comprising a polyvinyl carbazole type photoconductor and photoconductive zinc oxide in an amount of 1 to 20 parts by weight per part by weight of the photoconductor and a topcoat layer comprised of a polyvinyl carbazole type photoconductor.This laminated photosensitive material has a very high sensitivity and a high initial charge voltage in combination and provides an image having a high density and a high contrast.

Abstract: An electrochromic display device with an improved current efficiency as well as with an extensive memory capability is disclosed; the device comprises a vapor deposited layer of an electrochromic material and a contiguous layer comprising chromium (III) oxide and the oxide of a transition metal or silicon also formed by vapor deposition. These two layers are sandwiched between a pair of electrodes at least one of which is light-transmitting.

Abstract: An austenitic stainless steel substantially comprising not more than 0.15% by weight of C, 2.56 - 4.0% by weight of Si, not more than 2.0% by weight of Mn, 8 - 22% by weight of Ni, 16 - 25% by weight of Cr, 0.001 - 0.05% by weight of at least one alkaline earth metal, 0 - 2.5% by weight of Al, 0 - 0.1% by weight of at least one rare earth metal, 0 - 1.0% by weight of at least one of Nb, Ta, Ti, Zr and Hf, 0 - 2.0% by weight of Cu and balance Fe is disclosed. This class of steels are superior to the known high Si oxidation-resisting austenitic stainless steels in oxidation resistance especially in resistance to scaling, are of the same level in high temperature strength, and are much less expensive.

Abstract: A graft copolymer having enhanced moldability with high mechanical strength capable of forming a molded article having excellent gloss, transparency and color is prepared by grafting styrene polymer segments formed under specific conditions selected onto the backbone polymer of polyphenylene ether. Said styrene polymer segments are formed by melting and kneading continuously a mixture of (a) polyphenylene ether expressed by the general formula of: ##STR1## WHEREIN R.sub.1 and R.sub.2 represent an alkyl group having 1-4 carbon atoms or a halogen atom, respectively, and n represents the degree of polymerization and is 90-250, (b) a styrene polymer containing at least 80 weight % of styrene units and (c) styrene-containing monomers in the presence of a radical initiator at a temperature in the range from 160.degree. to 300.degree. C thereby to complete graft polymerization within a time ranging from 0.

Abstract: An austenitic stainless steel substantially comprising not more than 0.15% by weight of C, 2.56 - 4.0% by weight of Si, not more than 2.0% by weight of Mn, 8 - 22% by weight of Ni, 16 - 25% by weight of Cr, 0.001 - 0.05% by weight of at least one alkaline earth metal, 0 - 2.5% by weight of Al, 0 - 0.1% by weight of at least one rare earth metal, 0 - 1.0% by weight of at least one of Nb, Ta, Ti, Zr and Hf, 0 - 2.0% by weight of Cu and balance Fe is disclosed. This class of steels are superior to the known high Si oxidation-resisting austenitic stainless steels in oxidation resistance especially in resistance to scaling, are of the same level in high temperature strength, and are much less expensive.

Abstract: An austenitic stainless steel comprising not more than 0.15% by weight of C, 1.5 - 4.0% by weight of Si, not more than 2% by weight of Mn, 17.0 - 30.0% by weight of Ni, 24.0 - 32.0% by weight of Cr, 0.5 - 2.5% by weight of Al, 0.001 - 0.100% by weight of Ca, 0.001 - 0.100% by weight of at least one rare earth metal, 0 - 1.0% by weight of at least one of Ti, Zr, Hf, Nb and Ta, and balance Fe and incidental impurities is disclosed. Steels of this class are superior to the known high Si oxidation-resisting austenitic stainless steels in scaling and nitriding resistance and with stand prolonged use under the circumstances where the steels undergo cyclic heating to high temperatures.