Abstract: A high-quality protective film for a dry film resist is provided. A film of a polyethylene is used as the protective film, the polyethylene being prepared by pressurizing ethylene with use of an ultra-high pressure compressor and then polymerizing the ethylene at a reaction temperature of 190° to 300° C. and a reaction pressure of not lower than 167 MPa in the presence of a radical polymerization initiator, or by pressuring ethylene with use of an ultra-high pressure compressor and then polymerizing the ethylene at a reaction temperature of 190° to 300° C. in the presence of a radical polymerization initiator while allowing a radical polymerization inhibitor to be present in the reaction system.

Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source.

Abstract: A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.

Abstract: The present invention provides Pigment Yellow 180 having an excellent transparency produced by using a fine slurry of 5-acetoacetylamino-benzimidazolone as a coupling component when Pigment Yellow 180 is produced by coupling reaction of 5-acetoacetylamino-benzimidazolone and diazo component obtained by diazotization of 1,2-bis(2-aminophenoxy)ethane.

Abstract: The invention relates to a low-density polyethylene resin for laminates, a composition thereof, and a laminate and production method therefor. The low-density polyethylene resin is one obtainable by a high pressure radical polymerization method and has a density of 0.910 to 0.935 g/cm3, a melt flow rate of 0.1 to 300 g/10 min., and a terminal vinyl group number of 0.4 or more per 1,000 carbon atoms. According to the invention, a laminate having high interlayer adhesion strength can be obtained also by low-temperature, high-speed molding so that the occurrence of smoking and odor can be prevented. Also, the resin is excellent in productivity and economics. Further, the resin is excellent in productivity and economics because it can be readily made thinner. The laminate is suitable for application to, for example, food wrapping materials, containers, etc.

Abstract: An ion beam processing apparatus and a method of operating an ion source therefor are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source.

Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing the time that an apparatus can be made available by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying a positive potential to the acceleration electrode in order to extract an ion beam, and a deceleration power supply for applying a negative potential to the deceleration electrode ion order to prevent ions from flowing into the ion source.

Abstract: A high-quality protective film for a dry film resist is provided. A film of a polyethylene is used as the protective film, the polyethylene being prepared by pressurizing ethylene with use of an ultra-high pressure compressor and then polymerizing the ethylene at a reaction temperature of 190° to 300° C. and a reaction pressure of not lower than 167 MPa in the presence of a radical polymerization initiator, or by pressuring ethylene with use of an ultra-high pressure compressor and then polymerizing the ethylene at a reaction temperature of 190° to 300° C. in the presence of a radical polymerization initiator while allowing a radical polymerization inhibitor to be present in the reaction system.

Abstract: A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.

Abstract: A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field.

Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.

Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.

Abstract: The invention aims at reducing the movement of an operator to improve the operability. A vacuum chamber door is provided on the front side of a vacuum chamber, and sample holders are connected to the vacuum chamber door through a rotation shaft and a disk. An ion source is detachably mounted on the right side of the vacuum chamber, and a control panel is provided on the left side of the vacuum chamber. The vacuum chamber door is supported by a linearly reciprocally-moving mechanism so as to be drawn away from the vacuum chamber. An operation surface of the vacuum chamber door and an operation surface of the control panel are disposed substantially in a common plane.

Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.

Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

Abstract: A polymerization initiator composition comprising 100 parts by weight of an organic boron compound (A) and 10 to 150 parts by weight of an aprotic solvent (B) having a boiling point of 30 to 150.degree. C.; and a dental or surgical adhesive composition containing the above polymerization initiator composition.

Abstract: A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field.

Abstract: An apparatus for manufacturing cement clinker is disclosed in which raw material powder of cement pre-heated and partially pre-calcined by a pre-heating unit such as a suspension pre-heater (or a provided pre-calciner') is charged into a granulating furnace as to be granulated, thus-obtained granulated material is charged into a sintering furnace as to be sintered, and the sintered material is cooled and recovered by a cooling unit, the apparatus having a granulating furnace so that the granulating performance of the granulating furnace is improved.

Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

Abstract: In order to implant an ion beam on wafers with low contamination, especially in a large capacity ion implanter for implanting for a long time, a rotating holder 1 shaped like a cylinder or a circular cone is provided, and the wafers 2 are arranged inside of the rotating holder 1 so as to be fixed firmly by a centrifugal force acting on the wafers. Thereby, the wafers are implanted with low contamination, because the periphery of the wafer is not supported by any stopper which may otherwise be sputtered and cause contamination.