Abstract: Provided is an organic thin film transistor having a high carrier mobility. Provided is a polymer compound, including: a repeating unit represented by the following formula (1); and at least two repeating units, the repeating units being at least one selected from the group consisting of a repeating unit having a blocked isocyanato group and a repeating unit having a blocked isothiocyanato group, wherein, in formula (1), R1 is a hydrogen atom or a methyl group; R is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; Rf is a fluorine atom or a monovalent organic group including a fluorine atom; Ra is a divalent organic group having 1 to 20 carbon atoms, and a hydrogen atom in the divalent organic group may be substituted with a fluorine atom; X is an oxygen atom or a group represented by —NR7—; R7 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; a is an integer of 0 to 20; and m is an integer of 1 to 5.

Abstract: A composition comprising a polymer compound (A) containing a repeating unit having a group represented by the formula (1), a compound (B) decomposing to generate an acid by irradiation with an electromagnetic wave or an electronic beam or by heating, and a compound (C) reacting with a hydroxyl group in the presence of an acid: wherein R represents a monovalent organic group showing an activation energy in dissociating from an oxygen atom by the action of an acid of 80 kJ/mol or less. R? represents an alkyl group and the like. n represents an integer of 0 or more. R? represents an alkylene group and the like.

Abstract: An object of the present invention is to provide an electronic device insulating layer which may improve characteristics of an electronic device. The means for solving the object is an electronic device insulating layer comprising a first insulating layer formed from a first insulating layer material and a second insulating layer formed on the first insulating layer from a second insulating layer material, the first insulating layer material being an insulating layer material comprising a photosensitive resin material (A), a tungsten (V) alkoxide (B) and a basic compound (C), the second insulating layer material being an insulating layer material comprising a polymer compound (D) which contains a repeating unit containing a cyclic ether structure and a repeating unit having an organic group capable of producing a phenolic hydroxyl group by the action of an acid.

Abstract: Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula: wherein R5 represents a hydrogen atom or a methyl group; Rb b represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R? represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and tungsten (V) alkoxide.

Abstract: Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula: wherein R5 represents a hydrogen atom or a methyl group; Rb b represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R? represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and tungsten (V) alkoxide.

Abstract: An object of the invention is to provide an organic thin film transistor insulating layer material which can be used to produce organic thin film transistors having a small absolute value of threshold voltage and low hysteresis. The solution to the problem is an organic thin film transistor insulating layer material including a macromolecular compound (A) which contains a repeating unit having a cyclic ether structure and a repeating unit having an organic group capable of being detached by an acid.

Abstract: An object of the present invention is to provide an electronic device insulating layer which may improve characteristics of an electronic device. The means for solving the object is an electronic device insulating layer comprising a first insulating layer formed from a first insulating layer material and a second insulating layer formed on the first insulating layer from a second insulating layer material, the first insulating layer material being an insulating layer material comprising a photosensitive resin material (A), a tungsten (V) alkoxide (B) and a basic compound (C), the second insulating layer material being an insulating layer material comprising a polymer compound (D) which contains a repeating unit containing a cyclic ether structure and a repeating unit having an organic group capable of producing a phenolic hydroxyl group by the action of an acid.

Abstract: An object of the invention is to provide an organic thin film transistor insulating layer material which can be used to produce organic thin film transistors having a small absolute value of threshold voltage and low hysteresis. The solution to the problem is an organic thin film transistor insulating layer material including a macromolecular compound (A) which contains a repeating unit having a cyclic ether structure and a repeating unit having an organic group capable of being detached by an acid.

Abstract: An object of the present invention is to provide an organic thin film transistor a gate insulating film of which can be formed at a low temperature. The organic thin film transistor of the present invention includes a source electrode, a drain electrode, an organic semiconductor layer which becomes a current path between the source electrode and the drain electrode, a gate electrode which controls an electric current passing through the current path, and an insulating layer which insulates the organic semiconductor layer from the gate electrode, wherein the insulating layer is formed of a cured substance of a composition containing a first compound having, in the molecule, two or more groups that produce a functional group which reacts with an active hydrogen group by electromagnetic radiations or heat, and a second compound having two or more active hydrogen groups in the molecule, where at least one of the first compound and the second compound is a polymer compound.

Abstract: The subject of the present invention is to provide an organic thin film transistor with a small hysteresis. The means for solving the subject is a resin composition for an organic thin film transistor gate insulating layer comprising (A) a macromolecule that comprises at least one repeating unit selected from the group consisting of repeating units represented by Formula (1), repeating units represented by Formula (1?), and repeating units represented by Formula (2) and contains two or more first functional groups in its molecule, wherein the first functional group is a functional group that generates, by the action of electromagnetic waves or heat, a second functional group that reacts with active hydrogen, and (B) at least one compound selected from the group consisting of low-molecular compounds containing two or more active hydrogens in each molecule and macromolecules containing two or more active hydrogens in each molecule.

Abstract: The problem of the present invention is to provide an organic thin film transistor insulating layer material capable of producing an organic thin film transistor having a small absolute value of threshold voltage and small hysteresis. The means for solving the problem is an organic thin film transistor insulating layer material comprising a macromolecular compound (A) containing repeating units having a fluorine atom-containing group, repeating units having a photodimerizable group and repeating units having a first functional group that generates a second functional group which reacts with active hydrogen by the action of electromagnetic waves or heat, and an active hydrogen compound (B).

Abstract: The problem to be solved by the present invention is to provide such an organic surface protective layer composition that a thin and uniform protective layer can be formed on a surface of an organic layer, that the formed protective layer can easily be removed by etching, and that it can inhibit the alteration of the organic compound presenting in the surface of the organic layer exposed by the etching. Means for solving the problem is an organic surface protective layer composition containing (A) a metal alkoxide, (B) a stabilizer for the metal alkoxide and (C) an organic solvent capable of dissolving the metal alkoxide.

Abstract: A problem of the present invention is to provide an organic thin film transistor insulating layer material which is capable of forming a cross-linked structure without conducting a treatment at higher temperature, and which enables an organic thin film transistor to have a small absolute value of threshold voltage (Vth) when it is used for the formation of a gate insulating layer. The means for solving the problem is an organic thin film transistor insulating layer material including a macromolecular compound that has a repeating unit having a group containing a fluorine atom and a repeating unit having a photodimerization-reactive group.

Abstract: The problem to be solved is to provide a resin composition for an organic thin film transistor insulating layer which can cross-link without being subjected to a treatment at a high temperature for a long time to form an insulating layer excellent in surface adhesion property. The solving means is a resin composition for an organic thin film transistor insulating layer comprising (A) a macromolecular compound comprising a repeating unit having a photosensitive group s linked through a urea bond or a urethane bond, (B) a curing agent and (C) an organic solvent.

Abstract: The subject of the present invention is to provide an organic thin film transistor with a small hysteresis. The means for solving the subject is a resin composition for an organic thin film transistor gate insulating layer comprising (A) a macromolecule that comprises at least one repeating unit selected from the group consisting of repeating units represented by Formula (1), repeating units represented by Formula (1?), and repeating units represented by Formula (2) and contains two or more first functional groups in its molecule, wherein the first functional group is a functional group that generates, by the action of electromagnetic waves or heat, a second functional group that reacts with active hydrogen, and (B) at least one compound selected from the group consisting of low-molecular compounds containing two or more active hydrogens in each molecule and macromolecules containing two or more active hydrogens in each molecule.

Abstract: An object of the present invention is to provide an organic thin film transistor a gate insulating film of which can be formed at a low temperature. The organic thin film transistor of the present invention includes a source electrode, a drain electrode, an organic semiconductor layer which becomes a current path between the source electrode and the drain electrode, a gate electrode which controls an electric current passing through the current path, and an insulating layer which insulates the organic semiconductor layer from the gate electrode, wherein the insulating layer is formed of a cured substance of a composition containing a first compound having, in the molecule, two or more groups that produce a functional group which reacts with an active hydrogen group by electromagnetic radiations or heat, and a second compound having two or more active hydrogen groups in the molecule, where at least one of the first compound and the second compound is a polymer compound.

Abstract: An object of the present invention is to provide a composition for an insulating layer, which can form the insulating layer (for instance, a gate insulating film and a protective layer of a transistor) at a low temperature, and further can form the insulating layer having superior withstand voltage. The composition for an insulating layer according to the present invention includes a first compound formed of a polymer compound having two or more active hydrogen groups in the molecule, and a second compound formed of a low-molecular compound having, in the molecule, two or more groups that produce a functional group which reacts with an active hydrogen group by electromagnetic radiations or heat.

Abstract: A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 ?m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25?a?0.60, and 0?c?0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Abstract: A positive working photosensitive composition comprising an epoxy compound having two or more epoxy groups in one molecule, a curing catalyst or a compound for producing a curing catalyst by heat, and sulfonates, a method of manufacturing a member for a semiconductor comprising the steps of applying the positive working photosensitive composition on a substrate to expose, curing an unexposed part by heat, and developing an exposed part, and a method of manufacturing a member for a display comprising the steps of applying the positive working photosensitive composition on a substrate to expose, curing an unexposed part by heat, and developing an exposed part.

Abstract: A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 ?m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25?a?0.60, and 0?c?0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.