Abstract: A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 ?m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; in the Formula (1), R1 and R2 express a monovalent organic group, and may be identical or different; “A” is a group expressed by the following Formula (2) having at least one phenolic hydroxyl group; and “a”, “b,” and “c” satisfy the following relation; a+b+c=1, in the Formula (2), R3, R4, and R5 express one of a hydrogen atom and a monovalent organic group, and may be identical or different, “m” expresses an integer, and “n” expresses an integer of 1 to 5. Preferably, 0.25?a?0.60, and 0?c?0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Abstract: A positive photosensitive composition comprising a quinonediazide compound, a novolak resin, a compound reacting with the novolak resin by the action of an acid, and a compound generating an acid by heating.

Abstract: The object of the present invention is to provide resin composition for intermediate layer of a three-layer resist comprising (A) a polyorganosilsesquioxane resin having a weight-average molecular weight of from 1000 to 50000 and having two or more functional groups, which polymerize or condense at the presence of a acid, in the molecule, and (B) a compound generating an acid by electromagnetic wave or heat, and resin composition for intermediate layer of a three-layer resist, comprising (C) a polyorganosilsesquioxane resin having in the molecule a hydroxyl group and having a weight-average molecular weight of from 1000 to 50000, as resin composition for intermediate layer of a three-layer resist which, when ketone compounds, aromatic compounds and the like are used as a resist solvent, does not cause dissolution of an intermediate layer in applying an upper layer resist and does not cause formation of a mixing layer at the interface with the upper layer resist, and which shows little change by time, excellen

Abstract: The invention provides a novel silicon-containing compound having an oxidation potential of 0.3 to 1.5 V on the basis of a standard hydrogen electrode, wherein at least one alkoxy group is bonded to a silicon atom and at least one aromatic amine group is also bonded to the silicon atom. An organic electroluminescence device having excellent mechanical and electric contact between an electrode and an organic layer is also provided by treating the surface of an anode with using a surface-treating agent comprising the above silicon-containing compound.

Abstract: A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 &mgr;m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; 1

Abstract: The object of the present invention is to provide resin composition for intermediate layer of a three-layer resist comprising (A) a polyorganosilsesquioxane resin having a weight-average molecular weight of from 1000 to 50000 and having two or more functional groups, which polymerize or condense at the presence of a acid, in the molecule, and (B) a compound generating an acid by electromagnetic wave or heat, and resin composition for intermediate layer of a three-layer resist, comprising (C) a polyorganosilsesquioxane resin having in the molecule a hydroxyl group and having a weigh-average molecular weight of from 1000 to 50000, as resin composition for intermediate layer of a three-layer resist which, when ketone compounds, aromatic compounds and the like are used as a resist solvent, does not cause dissolution of an intermediate layer in applying an upper layer resist and does not cause formation of a mixing layer at the interface with the upper layer resist, and which shows little change by time, excellent

Abstract: The invention provides a novel silicon-containing compound having an oxidation potential of 0.3 to 1.5 V on the basis of a standard hydrogen electrode, wherein at least one alkoxy group is bonded to a silicon atom and at least one aromatic amine group is also bonded to the silicon atom.

Abstract: The invention provides a novel silicon-containing compound having an oxidation potential of 0.3 to 1.5 V on the basis of a standard hydrogen electrode, wherein at least one alkoxy group is bonded to a silicon atom and at least one aromatic amine group is also bonded to the silicon atom. An organic electroluminescence device having excellent mechanical and electric contact between an electrode and an organic layer is also provided by treating the surface of an anode with using a surface-treating agent comprising the above silicon-containing compound.

Abstract: A polysilane is disclosed whose main chain skeleton has a repeating unit represented by the general formula (1): ##STR1## wherein R.sub.1 represents a substituted or unsubstituted alkyl cycloalkyl, aryl or aralkyl group; X is a atom having an unpaired electron or a group containing an atom having an unpaired electron and represents an oxygen atom, sulfer atom or a nitrogen atom-containing group represented by the general formula (2): ##STR2## wherein R.sub.2 represents a substituted or unsubstituted alkyl, cycloalkyl, aryl or aralkyl group; Ar.sub.1 represents a substituted or unsubstituted arylene group; and Ar.sub.2 represents a substituted or unsubstituted aryl group, a group having an aromatic amine skeleton or a group ethenylene skeleton; a process for producing the polysilane; and a dihalosilane which is the starting material therefor. The polysilane compound has an excellent moldability as a high polymeric material and a higher hole drift mobility as a hole transporting material.