Abstract: A method for detecting defects on a sample based on a defect inspection apparatus is provided. In the method, an image data set that includes defect data and non-defect data is organized. A convolutional neural network (CNN) model is defined. The CNN model is trained based on the image data set. The defects on the sample are detected based on inspection data of the defect inspection apparatus and the CNN model. The sample includes uniformly repeating structures, and the inspection data of the defect inspection apparatus is generated by filtering out signals of the uniformly repeating structures of the sample.

Abstract: Aspects of the present disclosure provide a sensor for remote temperature measurement. For example, the sensor can include a light source configured to form an illumination beam, focusing optics configured to direct the illumination beam from the light source onto a semiconductor sample at an illuminated spot thereof, for exciting bandgap photoluminescence (PL) light in the semiconductor sample, collection optics configured to collect the bandgap PL light excited from the semiconductor sample, at least one optical detector configured to measure spectral intensities of the bandgap PL light in a vicinity of a semiconductor bandgap wavelength of the semiconductor sample, and transmission optics configured to transmit the bandgap PL light from the collection optics to the at least one optical detector.

Abstract: A method for detecting defects on a sample based on a defect inspection apparatus is provided. In the method, an image data set that includes defect data and non-defect data is organized. A convolutional neural network (CNN) model is defined. The CNN model is trained based on the image data set. The defects on the sample are detected based on inspection data of the defect inspection apparatus and the CNN model. The sample includes uniformly repeating structures, and the inspection data of the defect inspection apparatus is generated by filtering out signals of the uniformly repeating structures of the sample.

Abstract: A method for detecting defects on a sample based on a defect inspection apparatus is provided. In the method, an image data set that includes defect data and non-defect data is organized. A convolutional neural network (CNN) model is defined. The CNN model is trained based on the image data set. The defects on the sample are detected based on inspection data of the defect inspection apparatus and the CNN model. The sample includes uniformly repeating structures, and the inspection data of the defect inspection apparatus is generated by filtering out signals of the uniformly repeating structures of the sample.

Abstract: An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

Abstract: An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

Abstract: A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

Abstract: A semiconductor processing system includes a processing chamber configured to perform a semiconductor manufacturing process on each of a plurality of wafers. The processing chamber includes at least one consumable component, and a substrate handling module located proximate the processing chamber and in communication with the processing chamber via a wafer access port. The wafer handling module includes a wafer handling robot configured to transfer each of the wafers between to the substrate handling module and the processing chamber through the wafer access port, and an optical diagnostic system including an optical sensor configured to detect an optical signal from the at least one consumable component.

Abstract: An optical system for controlling polarization may include an illumination source to illuminate a surface of a sample, a set of collection optics to collect illumination from the surface of a sample, and a wave plate having a spatially-varying surface profile along a thickness direction positioned at a pupil plane of the set of collection optics, where the spatially-varying surface profile of the wave plate is configured to control polarization rotation as a continuous function of transverse position, and where the spatially-varying surface profile is selected to rotate light scattered from a surface of a sample to a selected polarization angle. The system may further include a linear polarizer oriented to block light with the selected polarization angle, and a sensor to detect illumination transmitted through the linear polarizer.

Abstract: Techniques herein include an apparatus and method for measuring and monitoring properties of fluids consumed in a semiconductor fabrication process. The apparatus includes a flow cell having a hollow chamber, a first chamber sidewall of the hollow chamber bisecting the length of the flow cell, the first chamber sidewall having a predetermined angle to the incoming direction of light from the first light source; a refractive index sensor configured to detect the light from the first light source transmitted through the hollow chamber of the flow cell and exiting the flow cell through the second flow cell sidewall of the at least six flow cell sidewalls; and a first light sensor configured to detect the light from the first light source scattered off the fluid in the hollow chamber.

Abstract: An apparatus for detecting defects on a sample is provided. The apparatus includes a stage for receiving a sample to be inspected, and a first light source configured to generate an incident light beam to illuminate the sample on the stage. The first light source is configured to sequentially emit light of different wavelengths in wavelength sweeps. The apparatus also includes imaging optics for collecting light scattered from the sample and for forming a detection light beam, a detector for receiving the detection light beam and acquiring images of the sample, collection optics disposed within the detection light beam and configured to direct the detection light beam to the detector, and a first light modulator. The first light modulator is configured to filter out signals from the detection light beam, where the signals originate from uniform periodicity of uniformly repeating structures on the sample.

Abstract: A method for detecting defects on a sample based on a defect inspection apparatus is provided. In the method, an image data set that includes defect data and non-defect data is organized. A convolutional neural network (CNN) model is defined. The CNN model is trained based on the image data set. The defects on the sample are detected based on inspection data of the defect inspection apparatus and the CNN model. The sample includes uniformly repeating structures, and the inspection data of the defect inspection apparatus is generated by filtering out signals of the uniformly repeating structures of the sample.

Abstract: Techniques herein include an apparatus and method for measuring and monitoring properties of fluids consumed in a semiconductor fabrication process. The apparatus includes a flow cell having a hollow chamber, a first chamber sidewall of the hollow chamber bisecting the length of the flow cell, the first chamber sidewall having a predetermined angle to the incoming direction of light from the first light source; a refractive index sensor configured to detect the light from the first light source transmitted through the hollow chamber of the flow cell and exiting the flow cell through the second flow cell sidewall of the at least six flow cell sidewalls; and a first light sensor configured to detect the light from the first light source scattered off the fluid in the hollow chamber.

Abstract: An optical system for controlling polarization may include an illumination source to illuminate a surface of a sample, a set of collection optics to collect illumination from the surface of a sample, and a wave plate having a spatially-varying surface profile along a thickness direction positioned at a pupil plane of the set of collection optics, where the spatially-varying surface profile of the wave plate is configured to control polarization rotation as a continuous function of transverse position, and where the spatially-varying surface profile is selected to rotate light scattered from a surface of a sample to a selected polarization angle. The system may further include a linear polarizer oriented to block light with the selected polarization angle, and a sensor to detect illumination transmitted through the linear polarizer.

Abstract: A polarization control device includes a first wave plate having a first surface profile and a second wave plate having a second surface profile complementary to the first surface profile. The optical axis of the first wave plate is orthogonal to the optical axis of the second wave plate. The first wave plate and the second wave plate are positioned to align the first surface profile with the second surface profile and maintain a constant thickness across the polarization control device. The first wave plate and the second wave plate may control polarization rotation as a continuous function of transverse position across a pupil plane of an optical system. The first wave plate and the second wave plate are separated by a sufficiently small distance so as to limit wave front distortion below a selected level.

Abstract: An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

Abstract: Systems and methods are provided for discerning the intent of a device wearer primarily based on movements of the eyes. The system may be included within unobtrusive headwear that performs eye tracking and controls screen display. The system may also utilize remote eye tracking camera(s), remote displays and/or other ancillary inputs. Screen layout is optimized to facilitate the formation and reliable detection of rapid eye signals. The detection of eye signals is based on tracking physiological movements of the eye that are under voluntary control by the device wearer. The detection of eye signals results in actions that are compatible with wearable computing and a wide range of display devices.

Abstract: Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to direct pulses of light to an area on a wafer; a scanning subsystem configured to scan the pulses of light across the wafer; a collection subsystem configured to image pulses of light scattered from the area on the wafer to a sensor, wherein the sensor is configured to integrate a number of the pulses of scattered light that is fewer than a number of the pulses of scattered light that can be imaged on the entire area of the sensor, and wherein the sensor is configured to generate output responsive to the integrated pulses of scattered light; and a computer subsystem configured to detect defects on the wafer using the output generated by the sensor.

Abstract: An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

Abstract: A polarization control device includes a first wave plate having a first surface profile and a second wave plate having a second surface profile complementary to the first surface profile. The optical axis of the first wave plate is orthogonal to the optical axis of the second wave plate. The first wave plate and the second wave plate are positioned to align the first surface profile with the second surface profile and maintain a constant thickness across the polarization control device. The first wave plate and the second wave plate may control polarization rotation as a continuous function of transverse position across a pupil plane of an optical system. The first wave plate and the second wave plate are separated by a sufficiently small distance so as to limit wave front distortion below a selected level.