Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

Abstract: A method of operating a substrate support includes arranging a substrate on an inner portion of the substrate support and calculating a desired pocket depth of the substrate support using data indicative of a relationship between the desired pocket depth and at least one process parameter. The desired pocket depth corresponds to a desired distance between an upper surface of an edge ring surrounding the inner portion and an upper surface of the substrate. The method further includes selectively controlling, based on the desired pocket depth as calculated, an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

Abstract: A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.

Abstract: A method of operating a substrate support includes arranging a substrate on an inner portion of the substrate support and calculating a desired pocket depth of the substrate support using data indicative of a relationship between the desired pocket depth and at least one process parameter. The desired pocket depth corresponds to a desired distance between an upper surface of an edge ring surrounding the inner portion and an upper surface of the substrate. The method further includes selectively controlling, based on the desired pocket depth as calculated, an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

Abstract: A method for selectively etching one exposed material of a substrate relative to another exposed material of the substrate includes a) arranging the substrate in a processing chamber; b) setting a chamber pressure; c) setting an RF frequency and an RF power for RF plasma; d) supplying a plasma gas mixture to the processing chamber; e) striking the RF plasma in the processing chamber in one of an electric mode (E-mode) and a magnetic mode (H-mode); and f) during plasma processing of the substrate, changing at least one of the chamber pressure, the RF frequency, the RF power and the plasma gas mixture to switch from the one of the E-mode and the H-mode to the other of the E-mode and the H-mode.

Abstract: A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.

Abstract: A substrate support includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller that calculates a desired pocket depth of the substrate support. Pocket depth corresponds to a distance between an upper surface of the edge ring and an upper surface of the substrate. Based on the desired pocket depth, the controller selectively controls an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

Abstract: A substrate support includes an inner portion arranged to support a substrate, a lift ring surrounding the inner portion, the lift ring arranged to support an outer edge of the substrate, and a controller configured to control an actuator to adjust a height of the lift ring relative to the inner portion by selectively raising and lowering at least one of the lift ring and the inner portion of the substrate support. To adjust the height of the lift ring, the controller selectively adjusts the height of the lift ring to a transfer height for transfer of the substrate to the lift ring and retrieval of the substrate from the lift ring, and adjusts the height of the lift ring to a processing height for processing of the substrate.

Abstract: A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative gas, a baseline electropositive gas, and an additional electropositive gas into the substrate processing chamber. The electronegative gas includes an etch precursor. The additional electropositive gas mixes with and increases electron density of a plasma in the substrate processing chamber. The controller is configured to set an amount, flow rate or pressure of the additional electropositive gas based on at least one of a pressure of the electronegative gas or an electron affinity level of the additional electropositive gas.

Abstract: A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

Abstract: Apparatuses for processing substrates are provided herein. Apparatuses include a plasma etch chamber having a showerhead and pedestal for holding a substrate having silicon nitride, at least one outlet for coupling to a vacuum, a solid non-functional silicon source, and a plasma generator. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. Apparatuses also include a plasma etch chamber, at least one outlet, a solid non-functional silicon source, a plasma generator, and a controller for controlling operations including instructions for causing introduction of a fluorinating gas and causing ignition of a plasma to form fluorine-containing etching species in the plasma etch chamber.

Abstract: Methods of selectively etching silicon nitride on a semiconductor substrate by providing silicon to the plasma to achieve high etch selectivity of silicon nitride to silicon-containing materials are provided. Methods involve providing silicon from a solid or fluidic silicon source or both. A solid silicon source may be upstream of a substrate, such as at or near a showerhead of a process chamber, or in a remote plasma generator. A silicon gas source may be flowed to the plasma during etch.

Abstract: One system includes a chamber, a chuck assembly, and an ion source. The chuck assembly includes a substrate support and a precession assembly with a center support coupled to a stationary center point of an under region of the substrate support. The precession assembly includes first and second actuators connected to first and second locations, respectively, that are in the under region off-set from the center point. The precession assembly imparts a precession motion to the substrate support when the first actuator and the second actuator move up and down relative to the center support, and the precession motion imparted to the substrate causes a rotating tilt of the substrate support without rotation of the substrate support. The rotating tilt of the substrate is configured to cause ions generated by the ion source to impinge upon a surface of the substrate in continually varying angles of incidence.

Abstract: One system includes a chamber, a chuck assembly, and an ion source. The chuck assembly includes a substrate support and a precession assembly with a center support coupled to a stationary center point of an under region of the substrate support. The precession assembly includes first and second actuators connected to first and second locations, respectively, that are in the under region off-set from the center point. The precession assembly imparts a precession motion to the substrate support when the first actuator and the second actuator move up and down relative to the center support, and the precession motion imparted to the substrate causes a rotating tilt of the substrate support without rotation of the substrate support. The rotating tilt of the substrate is configured to cause ions generated by the ion source to impinge upon a surface of the substrate in continually varying angles of incidence.

Abstract: A substrate processing system includes a gas distribution device arranged to distribute process gases over a surface of a substrate arranged in a substrate processing chamber having an upper chamber region and a lower chamber region. A substrate support is arranged in the lower chamber region of the substrate processing chamber below the gas distribution device. A ring is arranged in the lower chamber region of the substrate processing chamber below the gas distribution device and above the substrate support. The ring is arranged to surround a faceplate of the gas distribution device and a region between the gas distribution device and the substrate support, and a gap is defined between the substrate support and the ring.

Abstract: A method for selectively etching one exposed material of a substrate relative to another exposed material of the substrate includes a) arranging the substrate in a processing chamber; b) setting a chamber pressure; c) setting an RF frequency and an RF power for RF plasma; d) supplying a plasma gas mixture to the processing chamber; e) striking the RF plasma in the processing chamber in one of an electric mode (E-mode) and a magnetic mode (H-mode); and f) during plasma processing of the substrate, changing at least one of the chamber pressure, the RF frequency, the RF power and the plasma gas mixture to switch from the one of the E-mode and the H-mode to the other of the E-mode and the H-mode.

Abstract: A substrate support includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller that calculates a desired pocket depth of the substrate support. Pocket depth corresponds to a distance between an upper surface of the edge ring and an upper surface of the substrate. Based on the desired pocket depth, the controller selectively controls an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

Abstract: A substrate support includes an inner portion arranged to support a substrate, a lift ring surrounding the inner portion, the lift ring arranged to support an outer edge of the substrate, and a controller configured to control an actuator to adjust a height of the lift ring relative to the inner portion by selectively raising and lowering at least one of the lift ring and the inner portion of the substrate support. To adjust the height of the lift ring, the controller selectively adjusts the height of the lift ring to a transfer height for transfer of the substrate to the lift ring and retrieval of the substrate from the lift ring, and adjusts the height of the lift ring to a processing height for processing of the substrate.

Abstract: A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.