Abstract: Electronic device processing systems are described. The system includes a mainframe housing having a transfer chamber, a first facet, a second facet opposite the first facet, a third facet, and a fourth facet opposite the third facet, a first carousel assembly coupled to a first facet, a second carousel assembly coupled to the third facet, a first load lock coupled to the second facet, a second load lock coupled to the fourth facet, and a robot adapted to operate in the transfer chamber to exchange substrates from the first and second carousels. Methods and multi-axis robots for transporting substrates are described, as are numerous other aspects.

Abstract: Provided are apparatus and methods for simultaneously swapping a processed wafer with an unprocessed wafer. A robot with a rotatable stage, a first blade assembly and second blade assembly extends both assemblies at the same time in opposite directions to pick up both a processed and unprocessed wafer. Rotation of the robot allows the unprocessed wafer to be placed in the position previously occupied by the processed wafer and vice versa.

Abstract: The present invention generally relates to methods and apparatus for thermally processing substrates. The apparatus include an energy source, a plurality of chambers, and one or more energy switches. The one or more optical switches are adapted to direct an amount of energy emitted from the energy source to one of the plurality of chambers, and then change switch positions to direct the energy to a second of the plurality of chambers at a preselected time. The plurality of chambers may each include a heated support and a plurality of lamps therein to heat a substrate. The methods generally include thermally processing a first substrate in a first chamber while preheating or aligning a second substrate in a second chamber. After the first substrate is thermally processed, the second substrate is processed in the second chamber using the same energy source as was used to process the first substrate.

Abstract: Embodiments of multiple substrate transfer robots and substrate processing systems have been disclosed herein. In some embodiments, a multiple substrate transfer robot is provided and may include an arm capable of extending along a horizontal direction; and a wrist coupled to the arm and having a plurality of blades coupled thereto, each blade configured to horizontally support a substrate thereupon and vertically disposed with respect to each of the other blades. In some embodiments, a substrate processing system is provided and may include a substrate processing chamber having a plurality of susceptors, wherein each susceptor is vertically disposed and capable of holding a semiconductor substrate; and a substrate transfer robot having a plurality of blades for transferring a plurality of substrates to and from the processing chamber, each blade configured to horizontally support a substrate thereupon and vertically disposed with respect to each of the other blades.

Abstract: Embodiments of the present invention relate to improvements to single-substrate, multi-chamber processing platform architecture for minimizing fabrication facility floor space requirements. Prior art systems require significant floor space around all sides to allow for adequate installation and servicing. Embodiments of the present invention provide platforms that allow for servicing the chambers and supporting systems via a front and rear of the platform allowing multiple, side-by-side platform placement within a fabrication facility, while providing improved serviceability of the platform components.

Abstract: Methods and apparatus for providing a gas to a slit valve opening are provided herein. In one embodiment, a slit valve is described. The slit valve includes a housing having an opening, the opening defined by a plurality of interior sidewalls and sized to allow a substrate to pass therethrough, a door adapted to selectively seal the opening, a gas inlet formed in the housing, and a plurality of nozzles disposed in or on at least one of the plurality of interior sidewalls, each of the plurality of nozzles in fluid communication with the gas inlet and the opening.

Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract: Methods and apparatus for precise substrate cool down control are provided. Apparatus for measuring temperature of substrates may include a cool down plate to support a substrate; a sensor to provide data corresponding to a temperature of the substrate when disposed on the cool down plate; and a computer coupled to the sensor to determine the temperature of the substrate from the sensor data. A method for measuring the temperature of a substrate may include providing a substrate to be cooled to a chamber having a cool down plate disposed therein, a sensor to provide data corresponding to a temperature of the substrate, and a computer coupled to the sensor; sensing a first temperature of the substrate after a predetermined first time interval has elapsed; comparing the first temperature to a predetermined temperature; and determining whether the first temperature is greater than, equal to, or less than the predetermined temperature.

Abstract: Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

Abstract: Embodiments of the present invention relate to improvements to single-substrate, multi-chamber processing platform architecture for minimizing fabrication facility floor space requirements. Prior art systems require significant floor space around all sides to allow for adequate installation and servicing. Embodiments of the present invention provide platforms that allow for servicing the chambers and supporting systems via a front and rear of the platform allowing multiple, side-by-side platform placement within a fabrication facility, while providing improved serviceability of the platform components.

Abstract: Methods and apparatus for providing a gas to a slit valve opening are provided herein. In one embodiment, a slit valve is described. The slit valve includes a housing having an opening, the opening defined by a plurality of interior sidewalls and sized to allow a substrate to pass therethrough, a door adapted to selectively seal the opening, a gas inlet formed in the housing, and a plurality of nozzles disposed in or on at least one of the plurality of interior sidewalls, each of the plurality of nozzles in fluid communication with the gas inlet and the opening.

Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract: A wafer buffering system is provided herein. In some embodiments, a wafer buffering system may include a frame having a vertical shaft disposed therethrough; two storage platforms, coupled to the frame on either side thereof, each to receive a wafer carrier thereon; and a transfer mechanism coupled to the vertical shaft and capable of vertical movement therealong and lateral movement along an x-axis extending in either direction from the frame at least sufficient to move over the two storage platforms. The transfer mechanism may further include a telescoping fork arm capable of laterally extending in a first direction and in a second direction corresponding to lateral positions of the two storage platforms on either side of the frame.

Abstract: Embodiments of multiple substrate transfer robots and substrate processing systems have been disclosed herein. In some embodiments, a multiple substrate transfer robot is provided and may include an arm capable of extending along a horizontal direction; and a wrist coupled to the arm and having a plurality of blades coupled thereto, each blade configured to horizontally support a substrate thereupon and vertically disposed with respect to each of the other blades. In some embodiments, a substrate processing system is provided and may include a substrate processing chamber having a plurality of susceptors, wherein each susceptor is vertically disposed and capable of holding a semiconductor substrate; and a substrate transfer robot having a plurality of blades for transferring a plurality of substrates to and from the processing chamber, each blade configured to horizontally support a substrate thereupon and vertically disposed with respect to each of the other blades.

Abstract: Embodiments of the invention generally provide apparatus and method for scheduling a process sequence to achieve maximum throughput and process consistency in a cluster tool having a set of constraints. One embodiment of the present invention provides a method for scheduling a process sequence comprising determining an initial individual schedule by assigning resources to perform the process sequence, calculating a fundamental period, detecting resource conflicts in a schedule generated from the individual schedule and the fundamental period, and adjusting the individual schedule to remove the resource conflicts.