Abstract: A charge trapping non-volatile organic memory device according to the present invention has a structure in which an organic matter-based blocking layer, a trapping layer, and a tunneling layer are sequentially positioned between a gate and an organic semiconductor layer positioned on an insulating substrate, the trapping layer including a metal oxide and a polymer, and has an organic-inorganic composite film in which the metal oxide is dispersed in a polymer matrix in units of atoms.

Abstract: A hydrogen supply method includes a two-side heat exchange mode in which both introducing a second fluid into a hydrogen storage part after the second fluid exchanges heat with a first fluid in a second heat exchanger in a state in which a compressor is driven to compress the first fluid and introducing the second fluid into the hydrogen storage part after the second fluid is heated or cooled in a thermal device are performed. The method also includes a one-side heat exchange mode in which one of introducing the second fluid into the hydrogen storage part after the second fluid exchanges heat with the first fluid in the second heat exchanger in a state in which the compressor is driven to compress the first fluid and introducing the second fluid into the hydrogen storage part after the second fluid is heated or cooled in the thermal device is performed.

Abstract: A method of preparing a carbon fiber including: preparing a precursor fiber for preparing a carbon fiber; and stabilizing the precursor fiber. The stabilization of the precursor fiber includes a first stabilization phase, a second stabilization phase, a third stabilization phase, and a fourth stabilization phase, which are set at four different temperatures between a temperature at which heat starts to be generated from the stabilization reaction of the precursor fiber and a temperature at which the generation of heat is maximized. Ozone gas is input while at least one phase of the third stabilization phase and the fourth stabilization phase is carried out.

Abstract: An all-solid-state battery having an increased lifespan is equipped with a pressure pad layer. More particularly, the all-solid-state battery includes a unit cell and a pressuring pad layer. The unit cell is composed of a cathode, an anode, and a solid electrolyte layer positioned between the cathode and the anode. The pressurizing pad layer is positioned on each side of the unit cell and includes a non-porous upper layer, a non-porous lower layer, and a porous core layer positioned between the non-porous upper layer and the non-porous lower layer.

Abstract: The present disclosure relates to a nanostructure for detecting viruses including an amphipathic polymer, and a diagnostic platform using the same, wherein the nanostructure is capable of specifically detecting viruses through silica-based nanoparticles with excellent stability and high dispersion and a biocompatible amphipathic polymer, such that it is possible to develop a diagnostic platform with high sensitivity through binding and agglomeration of the nanostructure and viruses and enable rapid and accurate diagnosis of a target virus.

Abstract: The present disclosure provides a waveguide display apparatus. The waveguide waveguide display apparatus of the present disclosure is a waveguide display apparatus for correcting curved surface reflection distortion, the waveguide display apparatus including a waveguide for guiding light inputted from the outside; a first diffractive optical element disposed at the waveguide, and diffracting the light inputted from the outside to the inside of the waveguide; and a second diffractive optical element disposed at the waveguide, and diffracting the light guided by the waveguide to output a plurality of diffracted lights in a direction of a curved surface reflector located outside, wherein the second diffractive optical element has a structure of a diffraction grating corresponding to a curvature of the curved surface reflector such that the diffracted lights are reflected at different locations of the curved surface reflector in directions parallel to each other.

Abstract: A pouch type all-solid-state battery including a reference electrode is disclosed. In the all-solid-state battery, a potential variation of each electrode is accurately measured because the ion transfer path between the reference electrode and a positive electrode/negative electrode is short. Accordingly, the all-solid-state battery secures a desired cell performance while having battery specifications similar to actual battery specifications.

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

Abstract: A picture generation apparatus and a control method thereof are disclosed. An embodiment of the present disclosure provides a picture generation apparatus including a light source; a Spatial Light Modulator (SLM) configured to output an image using light transmitted from the light source; and a control unit configured to control the light source and the SLM based on at least one of illuminance of the surroundings or content of the image.

Abstract: A method for decoding an image based on an intra prediction, comprising: obtaining a first prediction pixel of a first region in a current block by using a neighboring pixel adjacent to the current block; obtaining a second prediction pixel of a second region in the current block by using the first prediction pixel of the first region; and decoding the current block based on the first and the second prediction pixels.

Abstract: The present disclosure relates to a secondary battery manufacturing system having a multi-packaging unit, in which multiple packaging units of a secondary battery manufacturing facility are provided and a transfer box on which an electrode assembly is accommodated is transferred to each packaging unit by a transfer unit, wherein the secondary battery manufacturing system includes: an electrode supply unit equipped with a plurality of stacking devices for supplying an electrode assembly in which a plurality of battery cells are stacked; a tab-welding unit; at least one packaging unit; at least one temporary buffer; and a transfer unit.

Abstract: The present disclosure relates to a secondary battery manufacturing system in which a packaging unit of a secondary battery manufacturing facility are configured to have multiple packaging units, and having a multipackaging unit such that a transfer box in which an electrode assembly is seated is transferred to each of the packaging units by a transfer unit, and including an electrode supply unit having a plurality of stacking devices supplying an electrode assembly in which a plurality of battery cells are stacked, a tab welding unit, at least one packaging unit, at least one temporary buffer, and a transfer unit.

Abstract: An aqueous dispersion composition according embodiments of the present invention includes an ethylene-carboxylic acid copolymer, an anti-blocking agent including a polymer wax included in a content of 5 wt % or more based on a weight of the ethylene-carboxylic acid copolymer, and an aqueous dispersion medium. A peak area corresponding to a melting point of 80° C. or less in a differential scanning calorimetry (DSC) graph is 50% or more. Blocking phenomenon is suppressed using the anti-blocking agent while achieving desired heat seal properties.

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.

Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.