Patents by Inventor Jae-Jin Shin
Jae-Jin Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170207066Abstract: A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.Type: ApplicationFiled: April 20, 2016Publication date: July 20, 2017Inventors: Kijong PARK, Jun-Youl Yang, Yongsun Ko, Kyunghyun Kim, Taeheon Kim, Jae Jin Shin
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Patent number: 9502427Abstract: A preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern extending in a direction, and a trench is defined between structures including the active pattern, the preliminary tunnel insulation pattern and the preliminary charge storage pattern. A preliminary isolation pattern partially fills the trench. A dielectric layer and a control gate electrode layer are formed on the preliminary charge storage pattern and the preliminary isolation pattern. The control gate electrode layer, the dielectric layer, the preliminary charge storage pattern and the preliminary tunnel insulation pattern are patterned to form gate structures including a tunnel insulation pattern, a charge storage pattern, a dielectric layer pattern and a control gate electrode. The preliminary isolation pattern is isotropically etched to form an isolation pattern and a first air gap. An insulating interlayer is formed between the gate structures to keep the first air gap.Type: GrantFiled: February 19, 2016Date of Patent: November 22, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-Jin Shin, Kyung-Hyun Kim, Jung-Hun No, Choong-Kee Seong, Seung-Pil Chung, Jung-Geun Jee
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Publication number: 20160260726Abstract: A preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern extending in a direction, and a trench is defined between structures including the active pattern, the preliminary tunnel insulation pattern and the preliminary charge storage pattern. A preliminary isolation pattern partially fills the trench. A dielectric layer and a control gate electrode layer are formed on the preliminary charge storage pattern and the preliminary isolation pattern. The control gate electrode layer, the dielectric layer, the preliminary charge storage pattern and the preliminary tunnel insulation pattern are patterned to form gate structures including a tunnel insulation pattern, a charge storage pattern, a dielectric layer pattern and a control gate electrode. The preliminary isolation pattern is isotropically etched to form an isolation pattern and a first air gap. An insulating interlayer is formed between the gate structures to keep the first air gap.Type: ApplicationFiled: February 19, 2016Publication date: September 8, 2016Inventors: Jae-Jin SHIN, Kyung-Hyun KIM, Jung-Hun NO, Choong-Kee SEONG, Seung-Pil CHUNG, Jung-Geun JEE
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Publication number: 20140337878Abstract: A broadcasting receiving apparatus includes a receiver having a plurality of tuners, a storage configured to store an image received by the receiver and a controller configured to control at least one of the tuners that does not tune to a currently viewed image out of the plurality of tuners, to alternately tune a plurality of channels for preset time, and controls the storage to store a channel information image corresponding to respective channels based on an image tuned to by the at least one tuner.Type: ApplicationFiled: April 7, 2014Publication date: November 13, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Jae-jin SHIN, Hung-rok KWON, Min-chul JUNG
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Patent number: 8815676Abstract: Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.Type: GrantFiled: November 8, 2012Date of Patent: August 26, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Ryol Yang, Yoo-Chul Kong, Jung-Ho Kim, Jin-Gyun Kim, Jae-Jin Shin, Ji-Hoon Choi
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Publication number: 20130065369Abstract: Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.Type: ApplicationFiled: November 8, 2012Publication date: March 14, 2013Inventors: Sang-Ryol Yang, Yoo-Chul Kong, Jung-Ho Kim, Jin-Gyun Kim, Jae-Jin Shin, Ji-Hoon Choi
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Patent number: 8309405Abstract: Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.Type: GrantFiled: September 8, 2011Date of Patent: November 13, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Ryol Yang, Yoo-Chul Kong, Jin-Gyun Kim, Jae-Jin Shin, Jung-Ho Kim, Ji-Hoon Choi
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Patent number: 8283248Abstract: A method of manufacturing a semiconductor device includes forming a plurality of preliminary gate structures, forming a capping layer pattern on sidewalls of the plurality of preliminary gate structures, and forming a blocking layer on top surfaces of the plurality of preliminary gate structures and the capping layer pattern such that a void is formed therebetween. The method also includes removing the blocking layer and an upper portion of the capping layer pattern such that at least the upper sidewalls of the plurality of preliminary gate structures are exposed, and a lower portion of the capping layer pattern remains on lower sidewalls of the preliminary gate structures. The method further includes forming a conductive layer on at least the upper sidewalls of the plurality of preliminary gate structures, reacting the conductive layer with the preliminary gate structures, and forming an insulation layer having an air gap therein.Type: GrantFiled: September 16, 2011Date of Patent: October 9, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-Hyun Kim, Kyung-Hyun Kim, Jae-Hwang Sim, Jae-Jin Shin, Jong-Heun Lim, Hyun-Min Park
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Patent number: 8161507Abstract: A channel-switching apparatus and method in a digital broadcasting system omits conditional access control in logical channel-switching in one physical channel from processes that are executed for channel-switching in a digital broadcasting system, thereby reducing channel-switching time.Type: GrantFiled: May 30, 2006Date of Patent: April 17, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Jin Shin, Sung-Kwon Park, Hong-Ik Kim, Tae-Woong Kim, Su-Kyung Kim, Joon-Soon Im
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Publication number: 20120083077Abstract: Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.Type: ApplicationFiled: September 8, 2011Publication date: April 5, 2012Inventors: Sang-Ryol Yang, Yoo-Chul Kong, Jin-Gyun Kim, Jae-Jin Shin, Jung-Ho Kim, Ji-Hoon Choi
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Publication number: 20120070976Abstract: A method of manufacturing a semiconductor device includes forming a plurality of preliminary gate structures, forming a capping layer pattern on sidewalls of the plurality of preliminary gate structures, and forming a blocking layer on top surfaces of the plurality of preliminary gate structures and the capping layer pattern such that a void is formed therebetween. The method also includes removing the blocking layer and an upper portion of the capping layer pattern such that at least the upper sidewalls of the plurality of preliminary gate structures are exposed, and a lower portion of the capping layer pattern remains on lower sidewalls of the preliminary gate structures. The method further includes forming a conductive layer on at least the upper sidewalls of the plurality of preliminary gate structures, reacting the conductive layer with the preliminary gate structures, and forming an insulation layer having an air gap therein.Type: ApplicationFiled: September 16, 2011Publication date: March 22, 2012Inventors: Tae-Hyun KIM, Kyung-Hyun Kim, Jae-Hwang Sim, Jae-Jin Shin, Jong-Heun Lim, Hyun-Min Park
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Publication number: 20120052671Abstract: A method of manufacturing a non-volatile memory device and a non-volatile memory device are provided. The method includes: providing a substrate on which a plurality of charge storage layers that are electrically separated from each other by device isolation layers are formed; recessing the device isolation layers such that an uppermost portion of the device isolation layers is lower than an uppermost portion of the charge storage layers; and dry cleaning first and second sides of each of the charge storage layers that are exposed by the device isolation layers by using a cleaning agent including NF3 gas.Type: ApplicationFiled: July 27, 2011Publication date: March 1, 2012Inventors: Choong-kee Seong, Kwang-bok Kim, Kyung-hyun Kim, Jae-jin Shin, Hyun-ho Son
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Publication number: 20110113465Abstract: A set-top box identification method and system for identifying the set-top box which is currently connected to a Downloadable Conditional Access System (DCAS) based on set-top box manufacturer and/or set-top box model are provided. The set-top box identification method for the DCAS includes retrieving set-top box type information upon receipt of a set-top box information request transmitted by a DCAS headend, transmitting the set-top box information including the set-top box type information to the DCAS headend, and identifying, at the DCAS headend, the set-top box based on the set-top box information. The DCAS headend can acquire the information on the connected set-top box at any time and determine the manufacturer and model of the set-top box from the set-top box information.Type: ApplicationFiled: November 8, 2010Publication date: May 12, 2011Applicant: SAMSUNG ELECTRONICS CO. LTD.Inventors: Seong Min JOE, Jae Jin SHIN
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Patent number: 7913285Abstract: A method for providing pay-per-view service while observing an OpenCable standard in realization of bi-directional digital cable broadcasting includes a method for interfacing between a set-top box and a point of deployment (POD), the method comprising the steps of: receiving, at the set-top box, an arbitrary program event purchase-related instruction inputted by a user, generating an object based on the arbitrary program event purchase-related instruction, and transmitting the arbitrary program event purchase-related instruction object to the POD; and receiving, at the POD, the object transmitted by the set-top box, generating an answer object based on the reception, and transmitting the answer object to the set-top box.Type: GrantFiled: December 23, 2005Date of Patent: March 22, 2011Assignee: Samsung Electronics Co., Ltd.Inventor: Jae-Jin Shin
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Patent number: 7462659Abstract: This invention is related to a reactive nanoparticular cyclodextrin derivative useful as a porogen and a low dielectric matrix, with excellent mechanical properties and uniformly distributed nanopores, manufactured by sol-gel reaction of the above reactive cyclodextrin. Furthermore, this invention also is related to an ultralow dielectric film, with uniformly distributed nanopores, a relatively high porosity of 51%, and a relatively low dielectric constant of 1.6, manufactured by thin-filming of the conventional organic or inorganic silicate precursor by using the above reactive nanoparticular cyclodextrin derivative as a porogen.Type: GrantFiled: December 14, 2004Date of Patent: December 9, 2008Assignee: Industry - University Cooperation Foundation Sogang UniversityInventors: Hee-Woo Rhee, Do Young Yoon, Kook Heon Char, Jin-Kyu Lee, Bongjin Moon, Sung-Kyu Min, Se Jung Park, Jae-Jin Shin
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Publication number: 20080287573Abstract: The present invention relates to an ultra-low dielectric film for a copper interconnect, in particular, to an porous film prepared in such a manner that coating with an organic solution containing a polyalkyl silsesquioxane precursor or its copolymer as a matrix and acetylcyclodextrin nanoparticles as a template and then performing a sol-gel reaction and heat treatment at higher temperature. The present films may contain the template of up to 60 vol %, due to the use of acetylcyclodextrin, and have homogeneously distributed pores with the size of no more than 5 nm in the matrix. In addition, the present films exhibit a relatively low dielectric constant of about 1.5, and excellent interconnectivity between pores, so that they are considered a promising ultra-low dielectric film for a copper interconnect.Type: ApplicationFiled: May 12, 2004Publication date: November 20, 2008Inventors: Hee-Woo Rhee, Do Young Yoon, Kook Heon Char, Jin-Kyu Lee, Bongjin Moon, Sung-Kyu Min, Se Jung Park, Jae-Jin Shin
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Publication number: 20070128879Abstract: This invention is related to a reactive nanoparticular cyclodextrin derivative useful as a porogen and a low dielectric matrix, with excellent mechanical properties and uniformly distributed nanopores, manufactured by sol-gel reaction of the above reactive cyclodextrin. Furthemore, this invention also is related to an ultralow dielectric film, with uniformly distributed nanopores, a relatively high porosity of 51%, and a relatively low dielectric constant of 1.6, manufactured by thin-filming of the conventional organic or inorganic silicate precursor by using the above reactive cyclodextrin as a porogen.Type: ApplicationFiled: December 14, 2004Publication date: June 7, 2007Applicant: INDUSTRY-UNIVERSITY CORPORATION FOUNDATION SOGANG UNIVERSITYInventors: Hee-Woo Rhee, Do Young Yoon, Kook Heon Char, Jin-Kyu Lee, Bongjin Moon, Sung-Kyu Min, SeJung Park, Jae-Jin Shin
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Publication number: 20070016920Abstract: A channel-switching apparatus and method in a digital broadcasting system omits conditional access control in logical channel-switching in one physical channel from processes that are executed for channel-switching in a digital broadcasting system, thereby reducing channel-switching time.Type: ApplicationFiled: May 30, 2006Publication date: January 18, 2007Inventors: Jae-Jin Shin, Sung-Kwon Park, Hong-Ik Kim, Tae-Woong Kim, Su-Kyung Kim, Joon-Soon Im
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Publication number: 20070006257Abstract: A channel changing apparatus and method in a digital broadcasting system can reduce channel changing time by including a plurality of broadcast programs in one logical channel, and in response to channel changing, selectively displaying a corresponding program in the logical channel.Type: ApplicationFiled: April 5, 2006Publication date: January 4, 2007Inventors: Jae-Jin Shin, Sung-Kwon Park, Hong-Ik Kim, Tae-Woong Kim, Su-Kyung Kim, Joon-Soon Im
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Publication number: 20060184971Abstract: A method for providing pay-per-view service while observing an OpenCable standard in realization of bi-directional digital cable broadcasting includes a method for interfacing between a set-top box and a point of deployment (POD), the method comprising the steps of: receiving, at the set-top box, an arbitrary program event purchase-related instruction inputted by a user, generating an object based on the arbitrary program event purchase-related instruction, and transmitting the arbitrary program event purchase-related instruction object to the POD; and receiving, at the POD, the object transmitted by the set-top box, generating an answer object based on the reception, and transmitting the answer object to the set-top box.Type: ApplicationFiled: December 23, 2005Publication date: August 17, 2006Inventor: Jae-Jin Shin