Abstract: A Schottky diode includes an upper region having a first doping concentration of a first conductivity type, the upper region disposed above the SiC substrate and extending up to a top planar surface. First and second layers of a second conductivity type are disposed in the upper region adjoining the top planar surface and extending downward to a depth. Each of the first and second layers has a second doping concentration, the depth, first doping concentration, and second doping concentration being selected such that the first and second layers are depleted of carriers at a zero bias condition of the Schottky diode. A top metal layer disposed along the top planar surface in direct contact with the upper region and the first and second layers is the anode, and bottom metal layer disposed beneath the SiC substrate is the cathode, of the Schottky diode.

Abstract: A semiconductor device includes at least a first lateral MOSFET formed on a semiconductor substrate. The first lateral MOSFET has an interface defined by a plurality of trenches along which the current flow can be modulated by a perpendicular electric field. The portion of the interface lies on a plane substantially perpendicular to the plane of the substrate. The interface is configured such that at least a portion of the current flow along the portion of the interface that lies on a plane substantially perpendicular to the plane of the substrate is in a direction substantially parallel to the plane of the substrate.

Abstract: The present invention relates to ether-linked triazole compounds, methods of making them, pharmaceutical compositions containing them and their use as NRF2 activators.

Abstract: A Schottky diode includes an upper region having a first doping concentration of a first conductivity type, the upper region disposed above the SiC substrate and extending up to a top planar surface. First and second layers of a second conductivity type are disposed in the upper region adjoining the top planar surface and extending downward to a depth. Each of the first and second layers has a second doping concentration, the depth, first doping concentration, and second doping concentration being selected such that the first and second layers are depleted of carriers at a zero bias condition of the Schottky diode. A top metal layer disposed along the top planar surface in direct contact with the upper region and the first and second layers is the anode, and bottom metal layer disposed beneath the SiC substrate is the cathode, of the Schottky diode.

Abstract: A Schottky diode includes an upper region having a first doping concentration of a first conductivity type, the upper region disposed above the SiC substrate and extending up to a top planar surface. First and second layers of a second conductivity type are disposed in the upper region adjoining the top planar surface and extending downward to a depth. Each of the first and second layers has a second doping concentration, the depth, first doping concentration, and second doping concentration being selected such that the first and second layers are depleted of carriers at a zero bias condition of the Schottky diode. A top metal layer disposed along the top planar surface in direct contact with the upper region and the first and second layers is the anode, and bottom metal layer disposed beneath the SiC substrate is the cathode, of the Schottky diode.

Abstract: Methods and systems for securing a data connection for communicating between two end-points are described herein. One of the end-points may be a server and the other of the end-points may be a client that wants to communicate with the server. The data connection may be secured based on a previously-established secure connection and/or a self-signed or self-issued certificate. In some variations, by using the previously-established secure connection and/or a self-signed or self-issued certificate, the secure communication between the server and the client may be conducted without using a third-party authentication service and without requiring a third-party CA to issue a certificate for the server.

Abstract: A semiconductor device fabrication method includes forming first and second spaced apart base regions and source regions in a substrate with a portion of a drift region therebetween. The method further includes forming at least a first trench extending laterally through the base region, the drift region and the source region, the first trench extending vertically partially through the source region. The method also includes forming a first oxide layer over the trenched upper surface, and forming a polysilicon layer over the first oxide layer. The polysilicon layer is patterned to form the gate conductor, and a drain contact is formed on a bottom surface of the semiconductor substrate.

Abstract: In one aspect of the disclosure, a semiconductor package is disclosed. The semiconductor package includes a lead frame. A semiconductor die is attached to a first side of the lead frame. A protective shell covers at least a first portion of the first surface of the semiconductor die. The protective shell comprises of ink residue. A layer of molding compound covers an outer surface of the protective shell and exposed portion of the first surface of the semiconductor die. A cavity space is within an inner space of the protective shell and the first portion of the top surface of the semiconductor die.

Abstract: The present invention relates to bisaryl amide analogs, pharmaceutical compositions containing them and their use as NRF2 activators.

Abstract: The present invention relates to ether-linked triazole compounds, methods of making them, pharmaceutical compositions containing them and their use as NRF2 activators.

Abstract: Methods and apparatuses for seismic exploration of an underground structure obtain improved images by integrating partial match filtering in an FWI. Filtered (auxiliary) data replaces one of the observed data and the synthetic data in the FWI's objective function to avoid cycle skipping.

Abstract: Methods and apparatuses for seismic exploration of an underground structure obtain improved images by integrating partial match filtering in an FWI. Filtered (auxiliary) data replaces one of the observed data and the synthetic data in the FWI's objective function to avoid cycle skipping.

Abstract: The present invention relates to compounds of formula (I) and salts thereof, pharmaceutical compositions containing such compounds and to their use in therapy

Abstract: An arm immobilization apparatus (800) is disclosed, which comprises a main body (802) arranged to be of a substantially oblong shape; and a location strap (804) having first and second ends (806a, 806b), wherein the first end is arranged to be coupled to a long edge of the main body, and the second end is coupled to first and second short edges (808a, 808b) of the main body. Corresponding methods for wearing the arm immobilization apparatus are also disclosed.

Abstract: This disclosure describes methods to separate solids from liquids in a production facility. A process separates components in a defiber process stream by using two or more mechanical devices to separate the solids from the liquids based on density differences. The process produces animal feed products having a protein content ranging from approximately 45% to approximately 64%.

Abstract: In one aspect of the present disclosure, an apparatus for locating a mobile railway asset is provided that includes a power source, GNSS circuitry configured to utilize electrical power from the power source to receive GNSS data, and a controller operatively coupled to the power source and the GNSS circuitry. The controller has a power saving mode wherein the controller inhibits the GNSS circuitry from receiving GNSS data and a standard accuracy mode wherein the controller permits the GNSS circuitry to receive GNSS data for a first time period. The controller has a higher accuracy mode wherein the controller permits the GNSS circuitry to receive GNSS data for a second time period longer than the first time period, and subsequently across multiple instances, in order to collect more GNSS data that can be qualified, filtered, sorted, and averaged to produce a more accurate result.

Abstract: The invention is directed to certain novel compounds. Specifically, the invention is directed to compounds of formula (I): and salts thereof. The compounds of the invention are inhibitors of kinase activity, in particular PI3-kinase activity.

Abstract: A basket (10) comprising first and second side walls (16, 17) and first and second end walls (18, 19). Upper edges of the side and edge walls (16, 17, 18, 19) include a lip portion (22) and securing clips (34) are located adjacent lower sides of the lip portions (22). A retaining loop (32) is provided such that the retaining loop (32) is locatable around outer surfaces of the first and second side walls (16, 17) and the first and second end walls (18) to be received in the securing clips (34) to secure the first and second side walls (16, 17) and first and second end walls (18, 19) together to define an outer wall (12) of the basket (10).

Abstract: A shelving system (11) and a bracket (10) for a shelving system comprising, the bracket (10) comprising a first end portion (19), an intermediate portion (18) and second end portion (20). The intermediate portion (18) comprises a flexible wall portion being moveable from an open position, in which the flexile wall portion is planar, to a closed position, in which the flexible wall portion is arcuate. In the closed position, the flexible wall portion can wrap around a portion of a post (14) and the first and second end portions (19, 20) engage to form a connector (32) engageable with an end of a rail (16) for supporting drawers.

Abstract: A computing device includes memory configured for storing executable instructions, a processor configured for executing the instructions, a foldable display layer configured for displaying information in response to the execution of the instructions, and a bend limit layer coupled to the foldable display layer and arranged substantially parallel to a display surface of the foldable display layer. The bend limit layer is configured to increase its stiffness non-linearly when a radius of a bend of the bend limit layer is less than a threshold radius of curvature of the foldable display layer, the threshold radius of curvature being greater than 1 mm and less than 20 mm.