Patents by Inventor James B. Hannon
James B. Hannon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140179045Abstract: A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material.Type: ApplicationFiled: February 3, 2014Publication date: June 26, 2014Applicant: International Business Machines CorporationInventors: Tze-Chiang Chen, James B. Hannon, Ning Li, Satoshi Oida, George S. Tulevski, Devendra K. Sadana
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Patent number: 8741678Abstract: A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material.Type: GrantFiled: October 25, 2012Date of Patent: June 3, 2014Assignee: International Business Machines CorporationInventors: Tze-Chiang Chen, James B. Hannon, Ning Li, Satoshi Oida, George S. Tulevski, Devendra K. Sadana
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Publication number: 20140127896Abstract: Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.Type: ApplicationFiled: January 6, 2014Publication date: May 8, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, Dirk Pfeiffer
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Publication number: 20140084252Abstract: Graphene is used as a replacement for indium tin oxide as a transparent conductive electrode which can be used in an organic light emitting diode (OLED) device. Using graphene reduces the cost of manufacturing OLED devices and also makes the OLED device extremely flexible. The graphene is chemically doped so that the work function of the graphene is shifted to a higher value for better hole injection into the OLED device as compared to an OLED device containing an undoped layer of graphene. An interfacial layer comprising a conductive polymer and/or metal oxide can also be used to further reduce the remaining injection barrier.Type: ApplicationFiled: September 25, 2012Publication date: March 27, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Tze-Chiang Chen, James B. Hannon, Ning Li, Satoshi Oida, Devendra K. Sadana, George S. Tulevski
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Publication number: 20140087500Abstract: A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material.Type: ApplicationFiled: October 25, 2012Publication date: March 27, 2014Applicant: International Business Machines CorporationInventors: Tze-Chiang Chen, James B. Hannon, Ning Li, Satoshi Oida, George S. Tulevski, Devendra K. Sadana
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Publication number: 20140084253Abstract: A transparent conductive electrode stack containing a work function adjusted carbon-containing material is provided. Specifically, the transparent conductive electrode stack includes a layer of a carbon-containing material and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of carbon-containing material to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of carbon-containing material and no work function modifying material.Type: ApplicationFiled: September 25, 2012Publication date: March 27, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Tze-Chiang Chen, James B. Hannon, Ning Li, Satoshi Oida, George S. Tulevski, Devendra K. Sadana
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Publication number: 20140087501Abstract: Graphene is used as a replacement for indium tin oxide as a transparent conductive electrode which can be used in an organic light emitting diode (OLED) device. Using graphene reduces the cost of manufacturing OLED devices and also makes the OLED device extremely flexible. The graphene is chemically doped so that the work function of the graphene is shifted to a higher value for better hole injection into the OLED device as compared to an OLED device containing an undoped layer of graphene. An interfacial layer comprising a conductive polymer and/or metal oxide can also be used to further reduce the remaining injection barrier.Type: ApplicationFiled: October 25, 2012Publication date: March 27, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Tze-Chiang Chen, James B. Hannon, Ning Li, Satoshi Oida, Devendra K. Sadana, George S. Tulevski
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Patent number: 8623761Abstract: Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.Type: GrantFiled: September 6, 2012Date of Patent: January 7, 2014Assignee: International Business Machines CorporationInventors: Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, Dirk Pfeiffer
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Patent number: 8587065Abstract: Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided.Type: GrantFiled: February 1, 2012Date of Patent: November 19, 2013Assignee: International Business Machines CorporationInventors: Zhihong Chen, Aaron D. Franklin, James B. Hannon, George S. Tulevski
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Publication number: 20130299988Abstract: Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.Type: ApplicationFiled: May 10, 2012Publication date: November 14, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, Dirk Pfeiffer
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Publication number: 20130302978Abstract: Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.Type: ApplicationFiled: September 6, 2012Publication date: November 14, 2013Applicant: International Business Machines CorporationInventors: Griselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, Dirk Pfeiffer
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Patent number: 8465799Abstract: Techniques for producing atomic step-free silicon carbide surfaces are provided. In one aspect, a method for eliminating atomic steps from a silicon carbide surface is provided. The method comprises the following step. The silicon carbide and a silicon-containing gas are contacted at a temperature, background pressure, and for a length of time sufficient to re-arrange the silicon carbide to an atomic step-free surface. The silicon carbide surface can be the top of a mesa or the bottom of a hole patterned in a silicon carbide wafer.Type: GrantFiled: September 18, 2008Date of Patent: June 18, 2013Assignee: International Business Machines CorporationInventors: James B. Hannon, Rudolf Tromp
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Patent number: 8283453Abstract: The present invention provides a method for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.Type: GrantFiled: August 14, 2009Date of Patent: October 9, 2012Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Phaedon Avouris, James B. Hannon, Christian Klinke
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Patent number: 8242030Abstract: A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.Type: GrantFiled: September 25, 2009Date of Patent: August 14, 2012Assignee: International Business Machines CorporationInventors: James B. Hannon, Fenton R. McFeely, Satoshi Oida, John J. Yurkas
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Patent number: 8227171Abstract: A photosensitive monolayer is self-assembled on an oxide surface. The chemical compound of the photosensitive monolayer has three components. A first end group provides covalent bonds with the oxide surface for self assembly on the oxide surface. A photosensitive group that dissociates upon exposure to ultraviolet radiation is linked to the first end group. A second end group linked to the photosensitive group provides hydrophobicity. Upon exposure to the ultraviolet radiation, the dissociated photosensitive group is cleaved and forms a hydrophilic derivative in the exposed region, rendering the exposed region hydrophilic. Carbon nanotubes or nanocrystals applied in an aqueous dispersion are selectively attracted to the hydrophilic exposed region to from electrostatic bonding with the hydrophilic surface of the cleaved photosensitive group.Type: GrantFiled: March 14, 2011Date of Patent: July 24, 2012Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Teresita O. Graham, James B. Hannon, George S. Tulevski
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Publication number: 20120145998Abstract: Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided.Type: ApplicationFiled: February 1, 2012Publication date: June 14, 2012Applicant: International Business Machines CorporationInventors: Zhihong Chen, Aaron D. Franklin, James B. Hannon, George S. Tulevski
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Patent number: 8124463Abstract: Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided.Type: GrantFiled: September 21, 2009Date of Patent: February 28, 2012Assignee: International Business Machines CorporationInventors: Zhihong Chen, Aaron D. Franklin, James B. Hannon, George S. Tulevski
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Patent number: 8084012Abstract: The present invention provides a method for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.Type: GrantFiled: August 14, 2009Date of Patent: December 27, 2011Assignee: International Business Machines CorporationInventors: Alina Afzali-Ardakani, Phaedon Avouris, James B. Hannon, Christian Klinke
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Patent number: 8057984Abstract: A photosensitive monolayer is self-assembled on an oxide surface. The chemical compound of the photosensitive monolayer has three components. A first end group provides covalent bonds with the oxide surface for self assembly on the oxide surface. A photosensitive group that dissociates upon exposure to ultraviolet radiation is linked to the first end group. A second end group linked to the photosensitive group provides hydrophobicity. Upon exposure to the ultraviolet radiation, the dissociated photosensitive group is cleaved and forms a hydrophilic derivative in the exposed region, rendering the exposed region hydrophilic. Carbon nanotubes or nanocrystals applied in an aqueous dispersion are selectively attracted to the hydrophilic exposed region to from electrostatic bonding with the hydrophilic surface of the cleaved photosensitive group.Type: GrantFiled: August 14, 2009Date of Patent: November 15, 2011Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Teresita O. Graham, James B. Hannon, George S. Tulevski
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Publication number: 20110165428Abstract: A photosensitive monolayer is self-assembled on an oxide surface. The chemical compound of the photosensitive monolayer has three components. A first end group provides covalent bonds with the oxide surface for self assembly on the oxide surface. A photosensitive group that dissociates upon exposure to ultraviolet radiation is linked to the first end group. A second end group linked to the photosensitive group provides hydrophobicity. Upon exposure to the ultraviolet radiation, the dissociated photosensitive group is cleaved and forms a hydrophilic derivative in the exposed region, rendering the exposed region hydrophilic. Carbon nanotubes or nanocrystals applied in an aqueous dispersion are selectively attracted to the hydrophilic exposed region to from electrostatic bonding with the hydrophilic surface of the cleaved photosensitive group.Type: ApplicationFiled: March 14, 2011Publication date: July 7, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Teresita O. Graham, James B. Hannon, George S. Tulevski