Abstract: A diagnostic device evaluates microbial content of a sample. In some embodiments, the diagnostic device includes a plurality of sample cells in which the microbial content of a sample is evaluated. Electronic circuitry is used to apply electrical signals to electrodes that interact with the sample in the sample cells. The electronic circuitry also measures one or more characteristics of the sample. Using the measured characteristics, the diagnostic device performs one or more of: identifying microbes, counting microbes, and determining antimicrobial sensitivity of microbes within the sample.

Abstract: An avalanche photodiode can include: an avalanche region having one or more layers prepared from GaAs; an N? absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N? absorption layer; and optionally a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N? absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer. The avalanche photodiode can include a window layer above the N-type layer and lower conductivity layer, and an anode contact above the window layer. The avalanche photodiode can include an N+ barrier layer below the N? absorption layer, an N+ conduction layer below the N+ barrier layer, a substrate below the N+ conduction layer, and a cathode contact coupled with the N+ conduction layer.

Abstract: An avalanche photodiode can include: an avalanche region having one or more layers prepared from GaAs; an N? absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N? absorption layer; and optionally a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N? absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer. The avalanche photodiode can include a window layer above the N-type layer and lower conductivity layer, and an anode contact above the window layer. The avalanche photodiode can include an N+ barrier layer below the N? absorption layer, an N+ conduction layer below the N+ barrier layer, a substrate below the N+ conduction layer, and a cathode contact coupled with the N+ conduction layer.

Abstract: A method of determining antimicrobial activity of an agent can include providing a well, wherein the well contains at least one antimicrobial agent, the well further including at least two electrodes. A sample of a microbe can be added into the well and a voltage pulsed between the electrodes. An electrical property can be sampled and recorded. In another aspect, a method of identifying at least one microbe includes taking a sample containing the at least one microbe, isolating the at least one microbe from the sample, dividing the at least one microbe into at least one well, wherein each well contains at least one antimicrobial agent and at least two electrodes. A voltage is pulsed between the at least two electrodes, an electrical property is sampled during the pulsing and recorded. In another aspect, a diagnostic device for detecting at least one microbe is presented.

Abstract: A method of determining antimicrobial activity of an agent can include providing a well, wherein the well contains at least one antimicrobial agent, the well further including at least two electrodes. A sample of a microbe can be added into the well and a voltage pulsed between the electrodes. An electrical property can be sampled and recorded. In another aspect, a method of identifying at least one microbe includes taking a sample containing the at least one microbe, isolating the at least one microbe from the sample, dividing the at least one microbe into a at least one well, wherein each well contains at least one antimicrobial agent and at least two electrodes. A voltage is pulsed between the at least two electrodes, an electrical property is sampled during the pulsing and recorded. In another aspect, a diagnostic device for detecting at least one microbe is presented.

Abstract: A method of determining antimicrobial activity of an agent can include providing a well, wherein the well contains at least one antimicrobial agent, the well further including at least two electrodes. A sample of a microbe can be added into the well and a voltage pulsed between the electrodes. An electrical property can be sampled and recorded. In another aspect, a method of identifying at least one microbe includes taking a sample containing the at least one microbe, isolating the at least one microbe from the sample, dividing the at least one microbe into a at least one well, wherein each well contains at least one antimicrobial agent and at least two electrodes. A voltage is pulsed between the at least two electrodes, an electrical property is sampled during the pulsing and recorded. In another aspect, a diagnostic device for detecting at least one microbe is presented.

Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.

Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1240) having a substrate (1240), at least one active layer (1240) and at least one surface layer (1240), Current control can be achieved through the formation of patterns (1240) surrounding contacts (1215), said patterns (1240) including insulating implants and/or sacrificial layers formed between active devices represented by said contacts (1215). Current flows through active regions (1260) associated with said contacts (1215) and active devices. Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.

Abstract: Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.

Abstract: Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a sub-state (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract: Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in.

Abstract: Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control can be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) are defined by trenches (1725) that operate as nonconductive areas (1750). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: A lens having a reflective surface, and systems that use such a lens. The lens includes a transmissive part for passing a portion of an incident light beam, and a reflective part for reflecting a portion of the incident light beam, and the reflective part is preferably substantially non-transmissive. Such a lens may be particularly suitable in systems that include a back monitor photo detector that is used for sampling and controlling the output power of a light source.