Abstract: Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting, device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

Abstract: This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.

Abstract: The present invention provides a method for detecting bacteria and a nano-well device having one or more input/output connections about a gap and one or more bacteriophages at or about the gap that trigger a detectable electrical field fluctuation when the one or more bacteriophages contact a cognate target within a liquid sample.

Abstract: A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more isolation layers. Additionally, an oxide layer can be formed above the epitaxial layer. A plurality of Hall effect elements can be formed within the epitaxial layer(s) and below the oxide layer, wherein the Hall effect elements sense the components of an arbitrary magnetic field in the plane of the wafer and perpendicular to the current flow in the hall element. A plurality of field plates can be formed above the oxide layer to control the inherited offset due to geometry control and processing of the vertical Hall effect apparatus, while preventing the formation of an output voltage of the vertical Hall effect apparatus at zero magnetic fields thereof.

Abstract: In one example, a wafer level burn-in system includes a first electrode plate for providing electrical contact simultaneously to contacts of a group of semiconductor devices borne by a semiconductor wafer on a device surface of the semiconductor wafer. A second electrode plate is employed for providing electrical contact to a substrate surface of the semiconductor wafer. Finally, an electrical power generator is employed for providing electrical power to the group of semiconductor devices through the contacts and the substrate of the semiconductor wafer through the first and second electrode plates.

Abstract: An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

Abstract: Optical transmitters are disclosed, one example of which includes a vertical cavity surface emitting laser that includes a substrate upon which a lower mirror is disposed. In this example, a spacer is disposed between the lower mirror and an active region. Another spacer separates the active region and an upper mirror. The upper mirror includes an oxide insulating region that is damaged by ion implantation so that desirable effects are achieved with respect to lateral sheet resistance, and quantum well recombination centers in the active region.

Abstract: A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.

Abstract: A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.

Abstract: A Hall element is provided with a segmented field plate. Dynamic bias control is applied to the segments of the field plate. In one embodiment, a feedback signal is derived from an amplified output of the Hall element. The feedback signal is applied to the segments of the field plate in order to control sheet conductivity in specific localized areas. In one embodiment, a metal field plate is split into four segments along lines between bias and sense contacts of the Hall element. Opposing diagonal segments are electrically connected.

Abstract: A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past the desired lattice constant is configured at a low temperature. A reverse grading layer grades the lattice constant back to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in at least the grading layer and the reverse grading layer. Thereon a strained layer superlattice is created upon which a high-speed photodiode or other semiconductor device can be formed.

Abstract: An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device.

Abstract: A method and system for identifying and/or removing an oxide-induced dead zone in a VCSEL structure is disclosed herein. In general, a VCSEL structure can be formed having at least one oxide layer and an oxide-induced dead zone thereof. A thermal annealing operation can then be performed upon the VCSEL structure to remove the oxide-induced dead zone, thereby permitting oxide VCSEL structures thereof to be reliably and consistently fabricated. An oxidation operation may initially be performed upon the VCSEL structure to form the oxide layer and the associated oxide-induced dead zone. The thermal annealing operation is preferably performed upon the VCSEL after performing a wet oxidation operation upon the VCSEL structure.

Abstract: A vertical cavity surface emitting laser with a current guide comprised of an ion implant region and an oxide structure. The oxide structure is beneficially formed first, then, a gain guide ion implant region is formed in or below the oxide structure. The ion implant region extends into an active region. The energy and dosage used when forming the ion implant gain guide can be selected to control the lateral sheet resistance and the active region's non-radiative recombination centers.

Abstract: An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device.

Abstract: A method and system for identifying and/or removing an oxide-induced dead zone in a VCSEL structure is disclosed herein. In general, a VCSEL structure can be formed having at least one oxide layer and an oxide-induced dead zone thereof. A thermal annealing operation can then be performed upon the VCSEL structure to remove the oxide-induced dead zone, thereby permitting oxide VCSEL structures thereof to be reliably and consistently fabricated. An oxidation operation may initially be performed upon the VCSEL structure to form the oxide layer and the associated oxide-induced dead zone. The thermal annealing operation is preferably performed upon the VCSEL after performing a wet oxidation operation upon the VCSEL structure.

Abstract: A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region.

Abstract: A vertical cavity surface emitting laser with a current guide comprised of an ion implant region and an oxide structure. The oxide structure is beneficially formed first, then, a gain guide ion implant region is formed in or below the oxide structure. The ion implant region extends into an active region. The energy and dosage used when forming the ion implant gain guide can be selected to control the lateral sheet resistance and the active region's non-radiative recombination centers.

Abstract: A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region.

Abstract: A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+region situated directly over an N-active region. The active region also includes a p-doped region.