Patents by Inventor Jane M. Shaw
Jane M. Shaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5198153Abstract: Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat.Type: GrantFiled: May 26, 1989Date of Patent: March 30, 1993Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Wu-Song Huang, Richard D. Kaplan, Marie-Annick Le Corre, Stanley E. Perreault, Jane M. Shaw, Michel R. Tissier, George F. Walker
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Patent number: 5191182Abstract: Disclosed is a tuneable microwave apparatus useful in carrying out chemical and physical processes on a sample, particularly including polymerization. The apparatus includes a cavity in which the sample is disposed, a microwave supply, microwave power meter and sensor, means for sensing the temperature in the cavity, means for varying the volume of the chamber within the cavity wherein the sample is disposed, means for measuring microwave reflection from the sample, and computer-controlled means operatively associated with the foregoing to vary the microwave power and the size of the chamber. Openings are provided within the chamber to permit removal of vapor generated during expousre of the sample to the microwave radiation.Type: GrantFiled: November 27, 1991Date of Patent: March 2, 1993Assignee: International Business Machines CorporationInventors: Jeffrey D. Gelorme, David A. Lewis, Jane M. Shaw
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Patent number: 5141817Abstract: Structures containing a dielectric material having a polymeric reactive ion etch barrier embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallacyclobutane, metallabutene and vinyl groups. The etch barrier is deposited as a solvent free liquid which can fill gaps between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.Type: GrantFiled: June 13, 1989Date of Patent: August 25, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Richard P. McGouey, Sharon L. Nunes, Jurij R. Paraszczak, Jane M. Shaw
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Patent number: 5115095Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: May 19, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5110711Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: May 5, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5098816Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: April 11, 1991Date of Patent: March 24, 1992Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5059512Abstract: An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.Type: GrantFiled: October 10, 1989Date of Patent: October 22, 1991Assignee: International Business Machines CorporationInventors: Edward D. Babich, Jeffrey D. Gelorme, Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart, David F. Witman
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Patent number: 5041358Abstract: A composition containing a polymeric material obtained by interreacting an epoxy-novolak polymer with an organosilicon compound, a radiation sensitive onium salt, and a near U.V. sensitizer.Type: GrantFiled: April 17, 1989Date of Patent: August 20, 1991Assignee: International Business Machines CorporationInventors: Michael Hatzakis, Jane M. Shaw, Kevin J. Stewart
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Patent number: 4981909Abstract: Plasma-resistant polymeric materials are prepared by reacting a polymeric material containing reactive hydrogen functional groups with a multifunctional organometallic material containing at least two functional groups which are reactive with the reactive hydrogen functional groups of the polymeric material, such as hexamethylcyclotrisilazane.Type: GrantFiled: September 7, 1988Date of Patent: January 1, 1991Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Scott L. Jacobs, Juri R. Parasczcak, Jane M. Shaw, David F. Witman
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Patent number: 4975079Abstract: An electrical connector is described for making contact with a plurality of convex and deformable contacts on an electronic device. The electrical connector comprises a substrate having a plurality of conductors which extend above its surface. A polymeric material is disposed on the surface of the substrate and has openings which expose the conductors, each opening sized to receive one of the convex, deformable contacts, and to enable electrical connection between the exposed conductors and the deformable contacts. A mechanism is provided for urging the deformable contacts on the electronic device against the exposed conductors. The mechanism exerts sufficient force between the device and the conductors to cause some deformation of the convex contact areas by the conductors.Type: GrantFiled: February 23, 1990Date of Patent: December 4, 1990Assignee: International Business Machines Corp.Inventors: Brian S. Beaman, Keith E. Fogel, Jungihl Kim, Wolfgang Mayr, Jane M. Shaw, George F. Walker
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Patent number: 4908689Abstract: A system for defining a solder barrier using a silylated positive photoresist. This layer replaces the top chrome layer previously employed and defines the C4 and I/O select patterns. The personality pattern in the Cr-Cu layers is defined by the use of a positive photoresist which is etched to provide the copper etch mask. The etched copper is then used to etch the chrome. This avoids the incompatibility of the positive photoresist with the alkaline chromium etchant.Type: GrantFiled: June 27, 1988Date of Patent: March 13, 1990Assignee: International Business Machines CorporationInventors: Donald G. McBride, Jane M. Shaw
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Patent number: 4782008Abstract: Plasma-resistant polymeric materials are prepared by reacting a polymeric material containing reactive hydrogen functional groups with a multifunctional organometallic material containing at least two functional groups which are reactive with the reactive hydrogen functional groups of the polymeric material, such as hexamethylcyclotrisilazane.Type: GrantFiled: March 19, 1985Date of Patent: November 1, 1988Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Scott L. Jacobs, Juri R. Parasczcak, Jane M. Shaw, David F. Witman
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Patent number: 4770947Abstract: A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chrome.Type: GrantFiled: January 2, 1987Date of Patent: September 13, 1988Assignee: International Business Machines CorporationInventors: Donis G. Flagello, Jane M. Shaw, David F. Witman
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Patent number: 4693960Abstract: A composition containing a polysiloxane having a polymerizable ethylenically unsaturated group, and 2,2-dimethoxy-2-phenyl acetophenone as an ultraviolet light sensitizer; and use thereof in lithography.Type: GrantFiled: November 7, 1986Date of Patent: September 15, 1987Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, John J. Liutkis, Juri R. Parasczak, Jane M. Shaw
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Patent number: 4678850Abstract: Poly(halogenated styrene) compositions having a molecular weight range of from about 1.times.10.sup.5 to 1.times.10.sup.6 and a dispersivity of from about 1.5 to about 2.5 useful as negative resists.Type: GrantFiled: October 19, 1984Date of Patent: July 7, 1987Assignee: International Business Machines Corp.Inventors: Michael Hatzakis, John J. Liutkus, Jurij R. Paraszcszak, Jane M. Shaw
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Patent number: 4665010Abstract: A method for forming dielectric filled isolation trenches in a semiconductor substrate wherein the substrate is coated with a photopolymer layer which also fills the trenches. Depending on the type of radiation used, the photopolymer layer is masked except for the regions directly above the filled trenches. The structure is exposed to radiation through the mask, which is then removed. The unexposed portions of the photopolymer layer are washed away and heat is gradually applied to shrink the remaining photopolymer into the trenches until it becomes coplanar with the semiconductor substrate surface. A mask is used if the radiation is ultraviolet light, but no mask is required if electron beam or x-radiation is employed.Type: GrantFiled: April 29, 1985Date of Patent: May 12, 1987Assignee: International Business Machines CorporationInventors: Harold H. Herd, Lawrence Jacobowitz, Jane M. Shaw
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Patent number: 4603195Abstract: A composition obtained by interracting a quinone diazo compound and an organosilicon compound; and use thereof in lithography.Type: GrantFiled: December 30, 1983Date of Patent: July 29, 1986Assignee: International Business Machines CorporationInventors: Edward D. Babich, Michael Hatzakis, Jurij R. Paraszczak, Jane M. Shaw
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Patent number: 4212935Abstract: The cross-sectional profile which is produced upon development of a layer of alkali soluble resin-diazo ketone photoresist is modified by treating the layer with a solvent or solvent mixture which is different from but miscible with the solvent or solvent mixture used to form the resist layer. The treating solvent is believed to dilute the resist solvent in a surface layer portion of the resist thereby modifying the alkaline developer solubility of this portion. Undercut resist profiles may be obtained by this method with normal optical exposure of the resist.Type: GrantFiled: February 24, 1978Date of Patent: July 15, 1980Assignee: International Business Machines CorporationInventors: Benjamin J. Canavello, Michael Hatzakis, Jane M. Shaw