Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

Abstract: An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Abstract: A connector system and method comprising a coupling with 3 walls defining a cavity. Disposed on the first side wall and second side wall are lips protruding into the cavity, such that a grooved board inserted into the cavity is in contact with the lips and back wall. Disposed on the walls are mounting holes, such that other apparatuses may be mounted to the mounting holes. The couplings may be mounted on other identical couplings or on couplings of different heights.

Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: A lower rotor assembly for a torque sensor includes a lower rotor over-mold including at least one heat staking structure extending from an upper surface thereof. The lower rotor assembly further includes a lower stator integrally formed with the lower rotor over-mold as a single, unitary component. The lower rotor assembly also includes an upper stator including at least one receiving structure, where each receiving structure receives a respective heat staking structure of the lower rotor over-mold when the upper stator is coupled to the lower stator.

Abstract: An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

Abstract: An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.