Abstract: Provided herein are oligonucleotide agents comprising one or more therapeutic oligonucleotides such as siRNA and one or more targeting conjugate compounds. In certain embodiments, the conjugate compound comprises one or more N-Acetylgalactosamine as targeting group, branching group and linker group. By incorporating long carbon chains into the GalNAc clusters instead of using multiple amide groups to elongate the chain length, simplification of the synthesis by reducing the number of steps is achieved.

Abstract: A method, system and apparatus for flexible component routing design, wherein a flexible component includes a first end and a second end, includes moving the second end relative to the first end to simulate an operational motion state of the flexible component, scanning the flexible component to obtain a first set of routing data for the flexible component, changing position of the second end from a first position to a second position, moving the second end relative to the first end to simulate an operational motion state of the flexible component, scanning the flexible component to obtain a second set of routing data for the flexible component, and comparing the first set of routing data with the second set of routing data to determine a routing design for the flexible component.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Abstract: An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Abstract: An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.

Abstract: A connector system and method comprising a coupling with 3 walls defining a cavity. Disposed on the first side wall and second side wall are lips protruding into the cavity, such that a grooved board inserted into the cavity is in contact with the lips and back wall. Disposed on the walls are mounting holes, such that other apparatuses may be mounted to the mounting holes. The couplings may be mounted on other identical couplings or on couplings of different heights.

Abstract: A telematics controller is programmed identify a location of the vehicle responsive to failure of a vehicle-originated data call to initiate packet-switched communications, and send, to a service delivery network configured to provide data services to the vehicle, a message specifying that circuit-switched communication but not packet-switched communication is available to the vehicle. A message is received, over a wide-area network from a vehicle, in response to a failed initiation of a packed-switched data connection over the wide-area network, indicating that packet-switched communications are unavailable at a current location of the vehicle. Failure zones are updated to indicate that the current location of the vehicle is a network location supporting circuit-switched communication but not packet-switched communication over the wide-area network.

Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.

Abstract: A telematics controller is programmed identify a location of the vehicle responsive to failure of a vehicle-originated data call to initiate packet-switched communications, and send, to a service delivery network configured to provide data services to the vehicle, a message specifying that circuit-switched communication but not packet-switched communication is available to the vehicle. A message is received, over a wide-area network from a vehicle, in response to a failed initiation of a packed-switched data connection over the wide-area network, indicating that packet-switched communications are unavailable at a current location of the vehicle. Failure zones are updated to indicate that the current location of the vehicle is a network location supporting circuit-switched communication but not packet-switched communication over the wide-area network.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: The present disclosure provides a fastener for a vehicle carpet. The fastener includes a receiving portion having a first open end and a second open end, a flange connected at the first open end of the receiving portion, and a plurality of engaging parts disposed on an inner wall of the receiving portion and spaced apart along a perimeter of the inner wall. Each of the engaging parts has two flexible end sections connected with the inner wall of the receiving portion and a threaded section between the two flexible end sections.

Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.

Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: An article storage device comprises a housing having a storage space defined by a bottom and a plurality of sidewalls; and a partition plate extending between two opposing sidewalls of the housing, perpendicular to a bottom of the housing, and dividing the storage space into a plurality of compartments. The partition plate is pivotably coupled to the opposing sidewalls of the housing via a pivot.