Abstract: In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first well region and a second well region in a substrate. The method includes forming a third well region in the substrate and between the first well region and the second well region. The method includes forming a deep well region in the substrate and under the first well region and the third well region. The method includes partially removing the substrate to form a first fin, a second fin, and a third fin in the first well region, the second well region, and the third well region respectively. The method includes forming a first epitaxial structure, a second epitaxial structure, and a third epitaxial structure in the first recess, the second recess, and the third recess respectively.

Abstract: A field effect transistor includes a substrate comprising a fin structure. The field effect transistor further includes an isolation structure in the substrate. The field effect transistor further includes a source/drain (S/D) recess cavity below a top surface of the substrate. The S/D recess cavity is between the fin structure and the isolation structure. The field effect transistor further includes a strained structure in the S/D recess cavity. The strain structure includes a lower portion. The lower portion includes a first strained layer, wherein the first strained layer is in direct contact with the isolation structure, and a dielectric layer, wherein the dielectric layer is in direct contact with the substrate, and the first strained layer is in direct contact with the dielectric layer. The strained structure further includes an upper portion comprising a second strained layer overlying the first strained layer.

Abstract: There is disclosed in one example a heat dissipator for an electronic apparatus, including: a planar vapor chamber having a substantially rectangular form factor, wherein a second dimension d2 of the rectangular form factor is at least approximately twice a first dimension d1 of the rectangular form factor; a first fan and second fan; and a first heat pipe and second heat pipe discrete from the planar vapor chamber and disposed along first and second d1 edges of the planar vapor chamber, further disposed to conduct heat from the first and second d1 edges to the first and second fan respectively.

Abstract: The first type of semiconductor device includes a first fin structure extending in a first direction, a first gate, and a first slot contact disposed over the first fin structure. The first gate extends in a second direction and has a first gate dimension measured in the first direction. The first slot contact has a first slot contact dimension measured in the first direction. A second type of semiconductor device includes: a second fin structure extending in a third direction, a second gate, and a second slot contact disposed over the second fin structure. The second gate extends in a fourth direction and has a second gate dimension measured in the third direction. The second slot contact has a second slot contact dimension measured in the third direction. The second slot contact dimension is greater than the second gate dimension and greater than the first slot contact dimension.

Abstract: Semiconductor structures are provided. A semiconductor structure includes a substrate, a conductive plate of a first metal layer over the substrate, a first resistor material of a resistor layer over the conductive plate, a high-K material formed between the first resistor material and the conductive plate, a first conductive line of a second metal layer over the resistor layer, and a first via formed between the first conductive line and the first resistor material. The conductive plate, the first resistor material and the high-K material form a capacitor between the first and second metal layers. The first distance between the first resistor material and the conductive plate is less than the second distance between the first resistor material and the first conductive line.

Abstract: A method by a network device to record certifications granted to users in a distributed ledger implemented by a peer-to-peer computer network. The method includes responsive to determining that a second certification has been granted to a user after the first certification has been granted to the user, causing a token transfer to be recorded in the distributed ledger between a digital wallet associated with the second certification and a digital wallet associated with the user to indicate that the second certification has been granted to the user and also causing a token transfer to be recorded in the distributed ledger between a digital wallet associated with the first certification and the digital wallet associated with the second certification to indicate that the second certification has been granted to the user after the first certification.

Abstract: The first type of semiconductor device includes a first fin structure extending in a first direction, a first gate, and a first slot contact disposed over the first fin structure. The first gate extends in a second direction and has a first gate dimension measured in the first direction. The first slot contact has a first slot contact dimension measured in the first direction. A second type of semiconductor device includes: a second fin structure extending in a third direction, a second gate, and a second slot contact disposed over the second fin structure. The second gate extends in a fourth direction and has a second gate dimension measured in the third direction. The second slot contact has a second slot contact dimension measured in the third direction. The second slot contact dimension is greater than the second gate dimension and greater than the first slot contact dimension.

Abstract: Semiconductor structures are provided. A semiconductor structure includes a substrate, a conductive plate of a first metal layer over the substrate, a first resistor material of a resistor layer over the conductive plate, a high-K material formed between the first resistor material and the conductive plate, a first conductive line of a second metal layer over the resistor layer, and a first via formed between the first conductive line and the first resistor material. The conductive plate, the first resistor material and the high-K material form a capacitor between the first and second metal layers. The first distance between the first resistor material and the conductive plate is less than the second distance between the first resistor material and the first conductive line.

Abstract: A method for providing over-heating protection of a target device within an information processing system is disclosed. A determination is made whether or not a power status of the information processing system is set to turn on a main power of a power supply device. If the power status of the information processing system is set to turn on a main power of a power supply device, a power switch of the target device is turned on; otherwise, another determining is made whether or not the target device is set to operate based on a user's setting. If the target device is set to operate based on the user's setting, the power switch of the target device is turned on; otherwise, the power switch of the target device is turned off.

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

Abstract: A contact interface includes a first contact member including a first contact surface with a first material subsurface and a second material subsurface. The second material subsurface protrudes transversely above the first material subsurface. A second contact member includes a second contact surface to slide in contact with the first contact surface. The first material subsurface comprises a first material. The second material subsurface comprises a second material. The second material has a lower hardness than the first material.

Abstract: A contact interface includes a first contact member including a first contact surface with a first material subsurface and a second material subsurface. The second material subsurface protrudes transversely above the first material subsurface. A second contact member includes a second contact surface to slide in contact with the first contact surface. The first material subsurface comprises a first material. The second material subsurface comprises a second material. The second material has a lower hardness than the first material.

Abstract: Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

Abstract: Upon receiving an email for a mobile station containing a subject and a body, the subject and body are combined into a first message. If the email contains an attachment, the first message can be converted into a MMS message. If there is no attachment, the number of characters in the first message can be counted. If the number of characters is less than or equal to a first number of characters, the first message can be converted to a SMS message. If the number is greater than the first number of characters and less than or equal to a second number of characters, the first message can be converted to an EMS message. In addition, if the number of characters is greater than the second number of characters, the first message can be converted to the MMS message.

Abstract: A modular furniture system for use with cats includes shaped components and component connectors, to allow assembly in a configuration. The shaped components can be polygon shaped with right angles between segments, and flat rectangular side surfaces. The shaped components can be i-shaped, z-shaped, t-shaped, square-shaped, and l-shaped, can be manufactured from corrugated cardboard sheets that are glued together, and can further include a cover. Sides of the shaped components can be impregnated with a catnip solution to attract cats, which can use the modular furniture system for play and to scratch their claws.

Abstract: The text of an incoming message may be scanned for language that matches in whole or in part the name of a stored contact and/or information indicative of a stored location. Each identified instance of language may be converted into a link. When actuated, the link may initiate an action relating to the information to which the identified language was matched, such as to call or send an email to a matching contact or to show a map of or navigating instructions to the location indicated by matching location language. When the identified language matches multiple contacts or is indicative of multiple locations, actuation of the link may result in the display of a menu of all of the matches so that the desired one can be selected. A list of possible actions may also be provided.

Abstract: A method for providing over-heating protection of a target device within an information processing system is disclosed. A determination is made whether or not a power status of the information processing system is set to turn on a main power of a power supply device. If the power status of the information processing system is set to turn on a main power of a power supply device, a power switch of the target device is turned on; otherwise, another determining is made whether or not the target device is set to operate based on a user's setting. If the target device is set to operate based on the user's setting, the power switch of the target device is turned on; otherwise, the power switch of the target device is turned off.

Abstract: A method for providing over-heating protection of a target device within an information processing system is disclosed. A determination is made whether or not a power status of the information processing system is set to turn on a main power of a power supply device. If the power status of the information processing system is set to turn on a main power of a power supply device, a power switch of the target device is turned on; otherwise, another determining is made whether or not the target device is set to operate based on a user's setting. If the target device is set to operate based on the user's setting, the power switch of the target device is turned on; otherwise, the power switch of the target device is turned off.