Abstract: A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid wafer. The gettering material is then deposited over the indentation features. The indentation features increase the surface area of the getter material, thereby increasing the volume of gas that the getter material can absorb. This may improve the vacuum maintained within the vacuum cavity over the lifetime of the vacuum encapsulated device.

Abstract: A material for forming a conductive structure for a micromechanical current-driven device is described, which is an alloy containing about 0.025% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower and more stable than the sheet resistance of the pure metal. Accordingly, when used for conductive leads in a photonic device, the leads using the NiMn alloy may provide current to heat the photonic device while generating less heat within the leads themselves, and a more stable output.

Abstract: Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate, along with a raised feature formed on the first or the second substrate. At least one of the metal layers may be deposited conformally over the raised feature. The raised feature penetrates the molten material of the first or the second metal layers during formation of the alloy, and produces a spectrum of stoichiometries for the formation of the desired alloy, as a function of the distance from the raised feature. At some distance from the raised feature, the proper ratio of the first metal to the second metal exists to form an alloy of the preferred stoichiometry.

Abstract: A hermetic interconnect is fabricated on a substrate by forming a stud of conductive material over a metallization layer, and then overcoating the stud of conductive material and the metallization layer with a layer of compliant dielectric material. In one embodiment, the layer of compliant dielectric material is low Young's modulus silicon dioxide, formed by sputter-deposition at low temperature, in a low pressure argon atmosphere. The interconnect may provide electrical access to a micromechanical device, which is enclosed with a capping wafer hermetically sealed to the substrate with an AuInx alloy bond.

Abstract: Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate, along with a raised feature formed on the first or the second substrate. At least one of the metal layers may be deposited conformally over the raised feature. The raised feature penetrates the molten material of the first or the second metal layers during formation of the alloy, and produces a spectrum of stoichiometries for the formation of the desired alloy, as a function of the distance from the raised feature. At some distance from the raised feature, the proper ratio of the first metal to the second metal exists to form an alloy of the preferred stoichiometry.

Abstract: A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid wafer. The gettering material is then deposited over the indentation features. The indentation features increase the surface area of the getter material, thereby increasing the volume of gas that the getter material can absorb. This may improve the vacuum maintained within the vacuum cavity over the lifetime of the vacuum encapsulated device.

Abstract: A method for providing improved gettering in a vacuum encapsulated microdevice is described. The method includes designing a getter alloy to more closely approximate the coefficient of thermal expansion of a substrate upon which the getter alloy is deposited. Such a getter alloy may have a weight percentage of less than about 8% iron (Fe) and greater than about 50% zirconium, with the balance being vanadium and titanium, which may better match the coefficient of thermal expansion of a silicon substrate. In one exemplary embodiment, the improved getter alloy is deposited on a silicon substrate prepared with a plurality of indentation features, which increase the surface area of the substrate exposed to the vacuum. Such a getter alloy is less likely to delaminate from the indented surface of the substrate material during heat-activated steps, such as activating the getter material and bonding a lid wafer to the device wafer supporting the microdevice.

Abstract: Systems and methods for forming an encapsulated MEMS device include a hermetic seal which seals an insulating gas between two substrates, one of which supports the MEMS device. The hermetic seal may be formed by heating at least two metal materials, in order to melt at least one of the metal materials. The first melted metal material flows into and forms an alloy with a second metal material, forming a hermetic seal which encapsulates the MEMS device.

Abstract: A method for providing improved gettering in a vacuum encapsulated device is described. The method includes forming a plurality of small indentation features in a device cavity formed in a lid wafer. The gettering material is then deposited over the indentation features. The indentation features increase the surface area of the getter material, thereby increasing the volume of gas that the getter material can absorb. This may improve the vacuum maintained within the vacuum cavity over the lifetime of the vacuum encapsulated device.

Abstract: A MEMS switch device is made using a gold alloy as the switch contact material. The increased mechanical hardness of the alloy compared to the pure gold prevents the contacts of the switch from welding together. A scrubbing action which occurs when the switch closes may allow the contact surfaces to come to rest where their surfaces are complementary, thus resulting in higher contact area and low contact resistance, despite the higher sheet resistance of the gold alloy material relative to the pure gold material.

Abstract: A MEMS device is encapsulated in a carbon dioxide environment, which effectively insulates the MEMS device against arcing in high voltage applications. The carbon dioxide environment may have a pressure of between about 0.2 atm and about 4 atm. Carbon dioxide is shown to be more effective than other insulating gases such as sulfur hexafluoride in preventing arcing for applications having dimensions on the order of microns.

Abstract: A material for forming a conductive structure for a micromechanical current-driven device is described, which is an alloy containing about 0.025% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower and more stable than the sheet resistance of the pure metal. Accordingly, when used for conductive leads in a photonic device, the leads using the NiMn alloy may provide current to heat the photonic device while generating less heat within the leads themselves, and a more stable output.

Abstract: The invention describes a method and apparatus for deploying micromachined actuators in a plane which is orthogonal to the original fabrication plane of the devices. Using batch-processing, photolithographic procedures known in the micromachined electro-mechanical system (MEMS) art, a plurality of devices is constructed on a suitable substrate. The devices are then separated one from another by sawing and dicing the original fabrication wafer. The devices are rotated into an orthogonal orientation and affixed to a second wafer. The second wafer also contains circuitry for addressing and manipulating each of the devices independently of the others. With this method and apparatus, arrays of actuators are constructed whose plane of actuation is perpendicular to the plane of the array. This invention is useful for constructing N×M fiber optic switches, which direct light from N input fibers into M output fibers.

Abstract: An optical switch is fabricated using micro-electro-mechanical system (“MEMS”) techniques. A thin mirror is fabricated in the major plane of the substrate and rotates about an axis perpendicular to the major plane to move into and out of an optical beam path. The mirror surface is open for chemical polishing and deposition, resulting in a high-quality mirror. In one embodiment, the backside of the mirror is patterned with reinforcing ribs. In another embodiment, a two-sided mirror is fabricated.

Abstract: An optical cross-connect is fabricated on a substrate using individual MEMs dice with mirrors that rotate into and out of an optical beam path. Each die can be aligned to a single (input-output) pair of collimators in a fiber-optic switching system. An individually accessible magnetic drive on each die provides low power consumption when re-configuring the array in addition to fast switching speeds. The state of each die can be electronically sensed to verify proper array configuration and operation of each die.

Abstract: An optical cross-connect is fabricated on a substrate using individual MEMs dice with mirrors that rotate into and out of an optical beam path. Each die can be aligned to a single (input-output) pair of collimators in a fiber-optic switching system. An individually accessible magnetic drive on each die provides low power consumption when re-configuring the array in addition to fast switching speeds. The state of each die can be electronically sensed to verify proper array configuration and operation of each die.

Abstract: An optical switch is fabricated using micro-electro-mechanical system (“MEMS”) techniques. A thin mirror is fabricated in the major plane of the substrate and rotates about an axis perpendicular to the major plane to move into and out of an optical beam path. The mirror surface is open for chemical polishing and deposition, resulting in a high-quality mirror. In one embodiment, the backside of the mirror is patterned with reinforcing ribs. In another embodiment, a two-sided mirror is fabricated.