Abstract: Embodiments of the present invention relate to configurable inputs and/or outputs for memory and memory stacking applications. More specifically, embodiments of the present invention include memory devices that include a die having a circuit configured for enablement by a particular signal, an input pin configured to receive the particular signal, and a path selector configured to selectively designate a signal path to the circuit from the input pin.

Abstract: A dynamic random access memory device includes a mode register that is programmed with a delay value. In some embodiments, a offset code is also stored in the memory device. The memory device uses the delay value, which may be added to or multiplied by the offset code, to delay the initiation of a received auto-refresh or self-refresh command. A large number of dynamic random access memory devices in a system may be provided with different delay values and possibly offset codes so that the memory device do not all perform refreshes simultaneously in response to an auto-refresh or self-refresh command issued to all of the memory devices simultaneously. As a result, the peak current drawn by the memory devices resulting from the auto-refresh command or self-refresh command is maintained at a relatively low value.

Abstract: A combination of circuits for use in a memory device is comprised of a decode circuit responsive to a first portion of address information for identifying a word to be read or written. The decode circuit is further responsive to a second portion of the address information for identifying an order in which one or more portions of the identified word are to be read or written. An address sequencer routes at least one bit of the address information. A sequencer circuit is responsive to the address sequencer for ordering the plurality of data bits within each portion of the identified word.

Abstract: Methods of configuring a system. More specifically, operating current values corresponding to respective memory devices of memory module may be stored in programmable elements, such as antifuses, located on the memory device, during fabrication. The operating current values may be read from and/or stored in a non-volatile memory device on the memory module. Once the memory module is incorporated into a system, the programmable elements on the memory devices and/or the non-volatile memory device on the memory module may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

Abstract: Memory modules and methods for fabricating and implementing memory modules wherein unique operating current values corresponding to specific memory devices on the memory modules are accessed from a database such that the operating current values may be implemented to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating current values corresponding to the specific memory devices on the memory module may be stored in a database and accessed during fabrication or during implementation of the memory modules in a system. System performance may be optimized by implementing the unique operating current values corresponding to the specific memory devices on the memory modules.

Abstract: A method of operating a memory device includes placing the memory device in a persistent auto precharge mode of operation, applying a disable command to the memory device, and disabling the persistent auto precharge mode of operation in response to the applied disable command. Memory devices operating according this method may be used in memory systems that infrequently experience page hits, such as server systems, while the ability to disable the persistent auto precharge mode allows such memory devices to be used in systems that frequently experience page hits, such as graphics or input/output applications.

Abstract: Methods of manufacturing memory devices and memory modules comprising memory device. Specifically, respective operating current values may be measured and/or stored on a plurality of memory devices. More specifically, the operating current values may be stored in programmable elements, such as antifuses, on memory devices. The memory devices may be coupled to a substrate to form a memory module. A non-volatile memory device may be coupled to the substrate. The operating current values may be read from the programmable elements and stored in the non-volatile memory device. Once the memory module is incorporated into a system, the programmable elements or non-volatile memory may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

Abstract: A method and apparatus are provided for active termination control in a memory by an module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.

Abstract: A dynamic random access memory device includes a mode register that is programmed with a delay value. In some embodiments, a offset code is also stored in the memory device. The memory device uses the delay value, which may be added to or multiplied by the offset code, to delay the initiation of a received auto-refresh or self-refresh command. A large number of dynamic random access memory devices in a system may be provided with different delay values and possibly offset codes so that the memory device do not all perform refreshes simultaneously in response to an auto-refresh or self-refresh command issued to all of the memory devices simultaneously. As a result, the peak current drawn by the memory devices resulting from the auto-refresh command or self-refresh command is maintained at a relatively low value.

Abstract: A method and apparatus are provided for active termination control in a memory by an module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.

Abstract: A method and apparatus are provided for active termination control in a memory by a module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.

Abstract: A method and apparatus are provided for active termination control in a memory by a module register providing an active termination control signal to the memory. The module register monitors a system command bus for read and write commands. In response to detecting a read or write command, the module register generates an active termination control signal to the memory.

Abstract: A method and apparatus are provided for active termination control in a memory. The memory turns on active termination based on information programmed into one or more mode registers of the memory. The memory maintains the active termination in an on state for a predetermined time based on information programmed into one or more mode registers of the memory.

Abstract: A method of operating a memory device includes placing the memory device in a persistent auto precharge mode of operation, applying a disable command to the memory device, and disabling the persistent auto precharge mode of operation in response to the applied disable command. Memory devices operating according this method may be used in memory systems that infrequently experience page hits, such as server systems, while the ability to disable the persistent auto precharge mode allows such memory devices to be used in systems that frequently experience page hits, such as graphics or input/output applications.

Abstract: Memory modules and methods for fabricating and implementing memory modules wherein unique operating current values corresponding to specific memory devices on the memory modules are accessed from a database such that the operating current values may be implemented to improve system performance. Memory modules comprising a number of volatile memory devices may be fabricated. Operating current values corresponding to the specific memory devices on the memory module may be stored in a database and accessed during fabrication or during implementation of the memory modules in a system. System performance may be optimized by implementing the unique operating current values corresponding to the specific memory devices on the memory modules.

Abstract: Methods of operating a memory device comprised of a plurality of arrays of memory cells and peripheral devices for reading and writing information to the memory cells. One method comprises outputting an n-bit word in two ½n bit prefetch steps from a plurality of memory arrays in response to an address bit. Another method comprises prefetching a first portion of a word from a memory array, and prefetching a second portion of the word from the memory array, the first and second portions being determined by an address bit. Another method comprises reading a word from a memory array in at least two prefetch operations, wherein the order of the prefetch operations is controlled by an address bit.

Abstract: An apparatus enables the reordering of a block of n-bit words output from a plurality of memory cells according to information in certain address bits before outputting at least one n-bit word from a memory device while ignoring those certain address bits before inputting at least one n-bit word into the plurality of memory cells. The apparatus may additionally comprise examining at least two of the least significant bits of a column address and wherein the reordering is responsive to the examining. Thus, for reads a specific 8 bit burst is identified by the most significant column address bits while the least significant bits CA0–CA2 identify the most critical word and the read wrap sequence after the critical word. For writes, the burst is identified by the most significant column addresses with CA0–CA2 being “don't care” bits assumed to be 000.

Abstract: A technique for storing accurate operating current values using programmable elements on memory devices. More specifically, programmable elements, such as antifuses, located on a memory device are programmed with measured operating current values corresponding to the memory device, during fabrication. The memory device may be incorporated into a memory module that is incorporated into a system. Once the memory module is incorporated into a system, the programmable elements may be accessed such that the system can be configured to optimally operate in accordance with the operating current values measured for each memory device in the system.

Abstract: Methods and apparatuses for transferring heat from microelectronic device modules are disclosed. An apparatus in accordance with one embodiment of the invention can include first and second heat transfer portions positioned to face toward opposing faces of a microelectronic device module. Heat transfer fins having different length can extend away from at least one of the heat transfer portions. In one embodiment, the heat transfer fins can be integrally formed with other portions of the apparatus. In other embodiments, modules carrying the heat transfer devices can be mounted at an acute angle relative to a support structure (such as a PCB) so that heat transfer fins from one module can extend adjacent to the end region of the neighboring module. This arrangement can increase the rate at which heat is transferred away from the modules, and can increase the utilization of a limited heat transfer volume within a device, such as a computer.

Abstract: In a high speed memory subsystem differences in each memory device's minimum device read latency and differences in signal propagation time between the memory device and the memory controller can result in widely varying system read latencies. The present invention equalizes the system read latencies of every memory device in a high speed memory system by comparing the differences in system read latencies of each device and then operating each memory device with a device system read latency which causes every device to exhibit the same system read latency.