Patents by Inventor Jennifer E. Taylor

Jennifer E. Taylor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Voltage reference computations for memory decision feedback equalizers
    Patent number: 10147466
    Abstract: A device includes a combinational circuit configured to create a one or more distortion correction factors used offset inter-symbol interference from a data stream on a distorted bit. The device also includes a selection circuit coupled o the combinational circuit. The selection circuit includes a feedback pin configured to receive a control signal and an output, wherein the selection circuit is configured to select a first distortion correction factor of the one or more distortion correction factors based upon the control signal and transmit the first distortion correction factor from the output.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: December 4, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Jennifer E. Taylor, Raghukiran Sreeramaneni
  • Memory sensing using temperature compensated initial currents
    Patent number: 8760939
    Abstract: The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: June 24, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Jennifer E. Taylor, John D. Porter
  • Temperature compensation in memory devices and systems
    Patent number: 8559218
    Abstract: Devices, methods, and systems for temperature compensation in memory devices, such as resistance variable memory, among other types of memory are included. One or more embodiments can include a memory device including a table with an output that is used to create a multiplication factor for a current to compensate for temperature changes in the memory device, where the output depends on an operating temperature of the memory device and a difference in the current between a highest specified operating temperature and a lowest specified operating temperature of the memory device.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: October 15, 2013
    Assignee: Micron Technology, Inc.
    Inventors: John D. Porter, Jennifer E. Taylor
  • Capacitive divider sensing of memory cells
    Patent number: 8194475
    Abstract: The present disclosure includes devices and methods for sensing resistance variable memory cells. One device embodiment includes at least one resistance variable memory cell, and a capacitive divider configured to generate multiple reference levels in association with the at least one resistance variable memory cell.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: June 5, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Jennifer E. Taylor, John D. Porter
  • MEMORY SENSING DEVICES, METHODS, AND SYSTEMS
    Publication number: 20110310661
    Abstract: The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.
    Type: Application
    Filed: August 30, 2011
    Publication date: December 22, 2011
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Jennifer E. Taylor, John D. Porter
  • Memory sensing devices, methods, and systems
    Patent number: 8027187
    Abstract: The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: September 27, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Jennifer E. Taylor, John David Porter
  • TEMPERATURE COMPENSATION IN MEMORY DEVICES AND SYSTEMS
    Publication number: 20110205791
    Abstract: The present disclosure includes devices, methods, and systems for temperature compensation in memory devices, such as resistance variable memory, among other types of memory. One or more embodiments can include a memory device including a table with an output that is used to create a multiplication factor for a current to compensate for temperature changes in the memory device, where the output depends on an operating temperature of the memory device and a difference in the current between a highest specified operating temperature and a lowest specified operating temperature of the memory device.
    Type: Application
    Filed: May 5, 2011
    Publication date: August 25, 2011
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: John D. Porter, Jennifer E. Taylor
  • Temperature compensation in memory devices and systems
    Patent number: 7948793
    Abstract: Devices, methods, and systems for temperature compensation in memory devices, such as resistance variable memory, among other types of memory are included. A memory device can include a table with an output that is used to create a multiplication factor for a current to compensate for temperature changes in the memory device, where the output depends on an operating temperature of the memory device and a difference in the current between a highest specified operating temperature and a lowest specified operating temperature of the memory device.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: May 24, 2011
    Assignee: Micron Technology, Inc.
    Inventors: John David Porter, Jennifer E. Taylor
  • CAPACITIVE DIVIDER SENSING OF MEMORY CELLS
    Publication number: 20100214821
    Abstract: The present disclosure includes devices and methods for sensing resistance variable memory cells. One device embodiment includes at least one resistance variable memory cell, and a capacitive divider configured to generate multiple reference levels in association with the at least one resistance variable memory cell.
    Type: Application
    Filed: April 29, 2010
    Publication date: August 26, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Jennifer E. Taylor, John D. Porter
  • Capacitive divider sensing of memory cells
    Patent number: 7724564
    Abstract: The present disclosure includes devices and methods for sensing resistance variable memory cells. One device embodiment includes at least one resistance variable memory cell, and a capacitive divider configured to generate multiple reference levels in association with the at least one resistance variable memory cell.
    Type: Grant
    Filed: May 2, 2008
    Date of Patent: May 25, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Jennifer E. Taylor, John David Porter
  • TEMPERATURE COMPENSATION IN MEMORY DEVICES AND SYSTEMS
    Publication number: 20100067287
    Abstract: The present disclosure includes devices, methods, and systems for temperature compensation in memory devices, such as resistance variable memory, among other types of memory. One or more embodiments can include a memory device including a table with an output that is used to create a multiplication factor for a current to compensate for temperature changes in the memory device, where the output depends on an operating temperature of the memory device and a difference in the current between a highest specified operating temperature and a lowest specified operating temperature of the memory device.
    Type: Application
    Filed: September 12, 2008
    Publication date: March 18, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: John D. Porter, Jennifer E. Taylor
  • MEMORY SENSING DEVICES, METHODS, AND SYSTEMS
    Publication number: 20100067286
    Abstract: The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.
    Type: Application
    Filed: September 12, 2008
    Publication date: March 18, 2010
    Applicant: Micron Technology, Inc.
    Inventors: Jennifer E. Taylor, John D. Porter
  • CAPACITIVE DIVIDER SENSING OF MEMORY CELLS
    Publication number: 20090273969
    Abstract: The present disclosure includes devices and methods for sensing resistance variable memory cells. One device embodiment includes at least one resistance variable memory cell, and a capacitive divider configured to generate multiple reference levels in association with the at least one resistance variable memory cell.
    Type: Application
    Filed: May 2, 2008
    Publication date: November 5, 2009
    Applicant: Micron Technology, Inc.
    Inventors: Jennifer E. Taylor, John D. Porter