Abstract: Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal/flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.

Abstract: A process kit is described that resists plasma erosion, preserves the spatial uniformity of plasma properties, reduces particle generation in the chamber, and significantly enhances the lifetime of the process kit. A layer of polymer material covers the top surface of the process kit. The polymer material is fluorocarbon-based and not reactive with the species in the plasma. The polymer material not only protects the process kit from progressive erosion, but also prevents the generation of particles in the chamber. The polymer material has similar permittivity to that of the process kit and therefore maintains the spatial uniformity of plasma properties, e.g., etch rate, near the wafer perimeter. The thickness of the layer is controlled between 0.5 and 1.5 mm such that the difference between its coefficient of thermal expansion and that of the process kit will not cause the layer to peel off the process kit's top surface.

Abstract: An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate.

Abstract: A portable data storage and communication system includes a disk-shaped device having at least one universal contact symmetrically arranged about a center of the disk-shaped device. The disk-shaped device has at least one electrical component arranged therein which is coupled with the universal contact. An interface device receives the disk-shaped device and has at least one defined interface contact. The interface contact operatively couples with the universal contact regardless of the orientation of the disk-shaped device in the interface device.