Abstract: A display device includes a first panel including a pad side area at one side of the first panel, a first optically transparent adhesive member on one surface of the first panel, a printed circuit board including a first attachment portion attached to the one surface of the first panel at the pad side area, a window on the first optically transparent adhesive member, a second optically transparent adhesive member on the other surface of the first panel, and a second panel on the second optically transparent adhesive member opposite the first panel, wherein the pad side area has a connection area at which the printed circuit board is attached to the first panel, and at which an edge of the first optically transparent adhesive member extends beyond an edge of the second optically transparent adhesive member, and a non-connection area at which the printed circuit board is not attached.

Abstract: A dry type of torque converter for an electric vehicle and a control method thereof are disclosed.

Abstract: Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.

Abstract: The proposed technology relates to a thrust control apparatus of a propulsion system, and more particularly, to a thrust control apparatus of a solid propulsion system equipped with an aerospike pintle nozzle. The present invention is to simultaneously control the magnitude and direction of thrust by installing a pintle and a thrust vectoring unit at the rear end of a combustion tube of a solid propulsion system.

Abstract: A display device includes a first panel including a pad side area at one side of the first panel, a first optically transparent adhesive member on one surface of the first panel, a printed circuit board including a first attachment portion attached to the one surface of the first panel at the pad side area, a window on the first optically transparent adhesive member, a second optically transparent adhesive member on the other surface of the first panel, and a second panel on the second optically transparent adhesive member opposite the first panel, wherein the pad side area has a connection area at which the printed circuit board is attached to the first panel, and at which an edge of the first optically transparent adhesive member extends beyond an edge of the second optically transparent adhesive member, and a non-connection area at which the printed circuit board is not attached.

Abstract: Disclosed is a device for generating an organic molecular cluster ion beam, the device including a receiver configured to accommodate an organic material, a cluster generator configured to generate a cluster by supersonic expanding the organic material accommodated in the receiver at a high speed, a photo-ionizer configured to temporarily accommodate the cluster that is generated through the cluster generator, an ultraviolet (UV) light source configured to irradiate an UV pulse to the photo-ionizer to ionize the cluster, and entrance electrodes disposed at both sides of the photo-ionizer and configured to provide a potential difference to the photo-ionizer to generate a cluster ion beam.

Abstract: Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.

Abstract: A display device includes a first panel including a pad side area at one side of the first panel, a first optically transparent adhesive member on one surface of the first panel, a printed circuit board including a first attachment portion attached to the one surface of the first panel at the pad side area, a window on the first optically transparent adhesive member, a second optically transparent adhesive member on the other surface of the first panel, and a second panel on the second optically transparent adhesive member opposite the first panel, wherein the pad side area has a connection area at which the printed circuit board is attached to the first panel, and at which an edge of the first optically transparent adhesive member extends beyond an edge of the second optically transparent adhesive member, and a non-connection area at which the printed circuit board is not attached.

Abstract: A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.

Abstract: A pellicle frame, including aluminum, aluminum oxide, and a transition metal.

Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.

Abstract: A method of manufacturing a semiconductor device includes forming devices including source, drain and gate electrodes on a front surface of a substrate including a bulk silicon, a buried oxide layer, an active silicon, a gallium nitride layer, and an aluminum-gallium nitride layer sequentially stacked, etching a back surface of the substrate to form a via-hole penetrating the substrate and exposing a bottom surface of the source electrode, conformally forming a ground interconnection on the back surface of the substrate having the via-hole, forming a protecting layer on the front surface of the substrate, and cutting the substrate to separate the devices from each other.

Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.

Abstract: A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a width greater than a width of the foot portion. The foot portion of an end part of the gate electrode has a width less than a width of the head portion of another part of the gate electrode and greater than a width of the foot portion of the another part of the gate electrode. The foot portion of the end part of the gate electrode further penetrates the active layer so as to be adjacent to the substrate.

Abstract: A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a width greater than a width of the foot portion. The foot portion of an end part of the gate electrode has a width less than a width of the head portion of another part of the gate electrode and greater than a width of the foot portion of the another part of the gate electrode. The foot portion of the end part of the gate electrode further penetrates the active layer so as to be adjacent to the substrate.

Abstract: A method and a 3D display apparatus for processing a stereoscopic image signal in high rate by software while using a least number of hardware components in a portable 3D display apparatus based on a mobile Android platform are provided. This method is suitable for a portable terminal apparatus equipped with a kernel layer directly controlling hardware means including a display panel, and an application/middleware layer controlling the kernel layer to display a motion picture through the hardware means. One or more plane image surfaces are first generated from the application/middleware layer and stored in a first frame buffer. An encoded image signal is decoded under the application/middleware layer to restore a YUV image signal representing a stereoscopic image pair. Subsequently, the YUV image signal is converted into an RGB image signal, and left and right images of the RGB image signal are mixed at the kernel layer.

Abstract: A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a width greater than a width of the foot portion. The foot portion of an end part of the gate electrode has a width less than a width of the head portion of another part of the gate electrode and greater than a width of the foot portion of the another part of the gate electrode. The foot portion of the end part of the gate electrode further penetrates the active layer so as to be adjacent to the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming devices including source, drain and gate electrodes on a front surface of a substrate including a bulk silicon, a buried oxide layer, an active silicon, a gallium nitride layer, and an aluminum-gallium nitride layer sequentially stacked, etching a back surface of the substrate to form a via-hole penetrating the substrate and exposing a bottom surface of the source electrode, conformally forming a ground interconnection on the back surface of the substrate having the via-hole, forming a protecting layer on the front surface of the substrate, and cutting the substrate to separate the devices from each other.

Abstract: A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.

Abstract: A method and a 3D display apparatus for processing a stereoscopic image signal in high rate by software while using a least number of hardware components in a portable 3D display apparatus based on a mobile Android platform are provided. This method is suitable for a portable terminal apparatus equipped with a kernel layer directly controlling hardware means including a display panel, and an application/middleware layer controlling the kernel layer to display a motion picture through the hardware means. One or more plane image surfaces are first generated from the application/middleware layer and stored in a first frame buffer. An encoded image signal is decoded under the application/middleware layer to restore a YUV image signal representing a stereoscopic image pair. Subsequently, the YUV image signal is converted into an RGB image signal, and left and right images of the RGB image signal are mixed at the kernel layer.