Abstract: Operations for generating an integrated circuit netlist include generating a first schematic of an integrated circuit having a plurality of cells therein and generating a second schematic that defines pre-layout electrical interconnects between the plurality of cells of the integrated circuit and approximates parasitic resistances and parasitic capacitances of the pre-layout interconnects. The first and second schematics are then combined at corresponding first and second ports within the first and second schematics, respectively. Operations also include generating an integrated circuit netlist by generating a circuit schematic that defines post-layout electrical interconnects between the plurality of cells of the integrated circuit and approximates parasitic resistances and parasitic capacitances of the post-layout interconnects. This circuit schematic is then combined with the first schematic at corresponding first and second ports therein.

Abstract: An electrostatic chuck to minimize an arc and a glow discharge during processing of a semiconductor substrate is provided, In one aspect, an electrostatic chuckin a processing chamber includes a body having a first hole for providing a cooling gas to a backside of a substrate to control a temperature of the substrate, an inner electrode for generating an electrostatic force and a dielectric layer. A ceramic block is tightly inserted into a first hole and has a second hole connected to the first hole. A third hole formed through the dielectric layer is connected to the first hole and the second hole. The cooling gas is provided to the backside of the substrate through the first hole or the second hole. Since the first hole is covered with the ceramic block, the generation of an arc or a glow discharge inside the first hole may be minimized, thereby preventing damage to the electrostatic chuck and improving production yields.

Abstract: Some embodiments include an isolation layer defining an active region of a substrate, a gate pattern formed on the active region, and source/drain regions formed in the active region. Sidewall spacers are formed on sidewalls of the gate pattern, and a blocking insulation layer is formed on the isolation layer and on a portion of the active region neighboring the isolation layer. A silicide layer is formed on source/drain regions between the blocking insulation layer and the sidewall spacers. Some embodiments include defining an active region of a substrate using an isolation layer, forming a gate pattern on the active region, implanting impurities into the active region, and forming a spacer insulation layer on a surface of the substrate with the gate pattern. A region of the spacer insulation layer becomes thinner the closer it is to the gate pattern. Other embodiments are described in the claims.

Abstract: Operations for generating an integrated circuit netlist include generating a first schematic of an integrated circuit having a plurality of cells therein and generating a second schematic that defines pre-layout electrical interconnects between the plurality of cells of the integrated circuit and approximates parasitic resistances and parasitic capacitances of the pre-layout interconnects. The first and second schematics are then combined at corresponding first and second ports within the first and second schematics, respectively. Operations also include generating an integrated circuit netlist by generating a circuit schematic that defines post-layout electrical interconnects between the plurality of cells of the integrated circuit and approximates parasitic resistances and parasitic capacitances of the post-layout interconnects. This circuit schematic is then combined with the first schematic at corresponding first and second ports therein.