Abstract: The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

Abstract: A miniature microwave plasma torch apparatus (10) is described. The microwave plasma torch apparatus (10) is used for a variety of applications where rapid heating of a small amount of material is needed. The miniature microwave plasma torch apparatus (10) operates near or at atmospheric pressure for use in materials processing. The apparatus (10) provides a wide range of flow rates so that discharge properties vary from diffusional flow of radicals for gentle surface processing to high velocity, approaching supersonic, torch discharges for cutting and welding applications. The miniature microwave plasma torch apparatus (10) also has a very small materials processing spot size.

Abstract: A CVD process for producing nanocrystalline films using a plasma (56, 312) created by an argon atmosphere (at least about 90 percent by volume) containing methane (preferably about at least about 1% by volume) and optionally hydrogen (preferably 0.001 to 2% by volume) is described. Strictly controlled gas purity and an apparatus which excludes oxygen and nitrogen from being introduced from outside of the chamber (40, 305) are used. The films are coated on various substrates to provide seals, optical applications such as on lenses and as a substrate material for surface acoustic wave (SAW) devices.

Abstract: An apparatus and process for manufacturing changes of a substrate in a work region which is 100×100×100 microns or smaller is described. The apparatus uses a plasma source adjacent to the work region to produce radiation or matter which changes the surface. An atomic force microscope or laser can be used in addition. The process and apparatus can be used to produce MEMS devices on a substrate for use in a wide variety of applications.

Abstract: A process for growth of a lawn of aligned carbon nanotubes is described. The nanotubes are useful for cold cathode flat panel display, composites reinforcement and damping treatment.

Abstract: An apparatus and process for manufacturing changes of a substrate in a work region which is 100×100×100 microns or smaller is described. The apparatus uses a plasma source adjacent to the work region to produce radiation or matter which changes the surface. An atomic force microscope or laser can be used in addition. The process and apparatus can be used to produce MEMS devices on a substrate for use in a wide variety of applications.

Abstract: Wetted thin diamond films which are drapable are described. The films are mounted on various substrates and used as windows for electromagnetic radiation or form a surface coating on an article of manufacture.

Abstract: A miniature microwave plasma torch apparatus (10) is described. The microwave plasma torch apparatus (10) is used for a variety of applications where rapid heating of a small amount of material is needed. The miniature microwave plasma torch apparatus (10) operates near or at atmospheric pressure for use in materials processing. The apparatus (10) provides a wide range of flow rates so that discharge properties vary from diffusional flow of radicals for gentle surface processing to high velocity, approaching supersonic, torch discharges for cutting and welding applications. The miniature microwave plasma torch apparatus (10) also has a very small materials processing spot size.

Abstract: Wetted thin diamond films which are drapable are described. The films are mounted on various substrates and used as windows for electromagnetic radiation or form a surface coating on an article of manufacture.

Abstract: Surface Acoustic Wave (SAW) devices with an unpolished or nominally polished nanocrystalline diamond film, metal electrodes and piezoelectric composition coatings are described. The devices are used as radio frequency and microwave filters.

Abstract: An apparatus and method which maintains plasma discharges (for instance 25) in containers (for instance 20) which have an internal section of 1 cm or less in width are described. The very small cross-section plasma discharges are useful in MEMS devices, in spectrometers and in spectroscopy.

Abstract: Surface Acoustic Wave (SAW) devices with an unpolished or nominally polished nanocrystalline diamond film, metal electrodes and piezoelectric composition coatings are described. The devices are used as radiofrequency and microwave filters.

Abstract: A CVD process for producing nanocrystalline films using a plasma (56, 312) created by an argon atmosphere (at least about 90 percent by volume) containing methane (preferably about at least about 1% by volume) and optionally hydrogen (preferably 0.001 to 2% by volume) is described. Strictly controlled gas purity and an apparatus which excludes oxygen and nitrogen from being introduced from outside of the chamber (40, 305) are used. The films are coated on various substrates to provide seals, optical applications such as on lenses and as a substrate material for surface acoustic wave (SAW) devices.

Abstract: An apparatus and method which maintains plasma discharges (for instance 25) in containers (for instance 20) which have an internal section of 1 cm or less in width are described. The very small cross-section plasma discharges are useful in MEMS devices, in spectrometers and in spectroscopy.

Abstract: A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching.

Abstract: A process for depositing an adherent polycrystalline diamond thin film on a glass substrate, by chemical vapor deposition (CVD) at 1 to 15 torr and low temperatures of the substrate of between about 350 to 600.degree. C. using hydrogen and methane and optionally carbon dioxide. The substrate has diamond particles deposited on it or is polished with diamond particles prior to CVD. The process produces films which are clear and adherent.

Abstract: A method and apparatus for liquid thermoset resin or polymer molding using electromagnetic waves (particularly radiofrequency waves or microwaves), is described. The method and apparatus uses a metal mold (10, 212) with a cavity (401) for the molding as well as for confinement of the electromagnetic waves. Multiple low loss ports (A, B, C, D, E, p1, p2, p3) are provided for introducing the microwaves into the cavity.