Patents by Inventor Jessica Hartwich

Jessica Hartwich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060003526
    Abstract: An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs. Alternately, a FET is present in which: a channel region is the active region, the FET contains a web with opposing control electrodes connected by a connecting region that is isolated from the channel region by a thick insulating region. The thick insulating region is thicker than control electrode insulation regions. The control electrodes contain the same material as the far electrode region.
    Type: Application
    Filed: October 10, 2003
    Publication date: January 5, 2006
    Applicant: Infineon Technologies AG
    Inventors: Ralf Brederlow, Jessica Hartwich, Christian Pacha, Wolfgang Rosner, Thomas Schulz
  • Publication number: 20060001058
    Abstract: A fin field effect transistor memory cell having a first and a second source/drain region, a gate region, a semiconductor fin having a channel region between the first and the second source/drain region, a charge storage layer configured as a trapping layer arranged at least partly on the gate region, and a word line region on at least one part of the charge storage layer. The charge storage layer is set up such that electrical charge carriers can be selectively introduced into the charge storage layer or be removed therefrom by applying predetermined electrical potentials to the fin field effect transistor memory cell.
    Type: Application
    Filed: June 20, 2005
    Publication date: January 5, 2006
    Applicant: Infineon Technologies AG
    Inventors: Lars Dreeskornfeld, Jessica Hartwich, Franz Hofmann, Johannes Kretz, Michael Specht
  • Publication number: 20040219731
    Abstract: The invention relates to a molecular electronics arrangement comprising a substrate, at least one first strip conductor having a surface and being arranged in or on the substrate, a spacer which is arranged on the surface of the at least one first strip conductor and which partially covers the surface of the at least one first strip conductor, and at least one second strip conductor which is arranged on the spacer and comprises a surface which faces the surface of the at least one first strip conductor in a plane manner. The spacer partially covers the surface of the at least one second strip conductor, and defines a pre-determined distance between the at least one first strip conductor and the at least one second strip conductor.
    Type: Application
    Filed: June 14, 2004
    Publication date: November 4, 2004
    Inventors: Jessica Hartwich, Johannes Kretz, Richard Johannes Luyken, Wolfgang Rosner