Abstract: An ultrasonic motor includes a vibrating element having a piezoelectric body attached thereto to produce a traveling wave when the piezoelectric body is supplied with an electric power, and a contacting element to come in friction contact with the vibrating element when the vibrating element is vibrated by the traveling wave. The vibrating element is formed of a Mg-based alloy having a Mg content of more than 85% by weight.

Abstract: A tunable capacitor using an electrowetting phenomenon includes a first electrode; a second electrode which is spaced apart from the first electrode and faces the first electrode; a fluidic channel which is disposed between the first electrode and the second electrode; a first insulating layer which is disposed between the first electrode and the fluidic channel; and a conductive fluid which is disposed in the fluidic channel and moves along the fluidic channel when a direct current (DC) potential difference occurs between the first and second electrodes. Accordingly, it is possible to fabricate the tunable capacitor with the simplified fabrication process, good reliability and durability, and no restriction on the tuning range.

Abstract: An ultrasonic motor includes a fixed member including a surface, a movable member positioned to face the surface of the fixed member, and an actuator to cause at least a portion of the movable member to contact the surface of the fixed member and cause the movable member to move relative to the fixed member.

Abstract: A vibrating element of an ultrasonic motor includes a vibrating member, and a piezoelectric body to produce a traveling wave thus to vibrate the vibrating member when electric power is applied to the piezoelectric body. The piezoelectric body includes a first piezoelectric layer attached to the vibrating member and in which positive poles and negative poles are alternately polarized, a second piezoelectric layer attached to the first piezoelectric layer and in which positive poles and negative poles are alternately polarized, a plurality of electrodes formed on opposite surfaces of the first and second piezoelectric layers, and an electrode connecting part formed on outer circumferential surfaces of the first and second piezoelectric layers to selectively connect the plurality of electrodes to one other.

Abstract: A tunable capacitor using an electrowetting phenomenon includes a first electrode; a second electrode which is spaced apart from the first electrode and faces the first electrode; a fluidic channel which is disposed between the first electrode and the second electrode; a first insulating layer which is disposed between the first electrode and the fluidic channel; and a conductive fluid which is disposed in the fluidic channel and moves along the fluidic channel when a direct current (DC) potential difference occurs between the first and second electrodes. Accordingly, it is possible to fabricate the tunable capacitor with the simplified fabrication process, good reliability and durability, and no restriction on the tuning range.

Abstract: An ultrasonic motor includes a vibrating element having a piezoelectric body attached thereto to produce a traveling wave when the piezoelectric body is supplied with an electric power, and a contacting element to come in friction contact with the vibrating element when the vibrating element is vibrated by the traveling wave. The vibrating element is formed of a Mg-based alloy having a Mg content of more than 85% by weight.

Abstract: A cap wafer, fabrication method, and a semiconductor chip are provided. The cap wafer includes a cap wafer substrate; a penetrated electrode formed to penetrate the cap wafer substrate; and an electrode pad connected with a lower portion of the penetrated electrode on a lower surface of the cap wafer substrate, wherein the penetrated electrode has an oblique section which gradually widens from an upper surface to the lower surface of the cap wafer substrate. The fabrication method includes forming an oblique-via hole on a lower surface of a cap wafer substrate, the oblique-via hole having an oblique section which gradually narrows in a direction moving away from the lower surface of the cap wafer substrate; and forming a penetrated electrode in the oblique-via hole. The semiconductor chip includes a base wafer; a cap wafer; a cavity; a penetrated electrode; and a pad bonding layer.

Abstract: A wafer level package for a surface acoustic wave (SAW) device and a fabrication method thereof. The SAW device wafer level package includes a SAW device in which a SAW element is formed on a top surface of a device wafer, a cap wafer which is bonded with a top surface of the SAW device and has a viahole penetrating the cap wafer, and a conductive member to fill a part of the viahole. The viahole has a first via portion and a second via portion, the first via portion has a gradually smaller diameter from a bottom surface of the cap wafer until a certain depth, and the second via portion has a gradually greater diameter from the first via portion until a top surface of the cap wafer.

Abstract: A monolithic ink-jet printhead includes a substrate having a lower ink chamber formed on an upper surface thereof, a manifold for supplying ink to the lower ink chamber formed on a bottom surface thereof, and an ink channel providing communication therebetween; a nozzle plate having a plurality of passivation layers and a metal layer sequentially stacked on the substrate, the nozzle plate having an upper ink chamber formed therein on a bottom surface of the metal layer, a nozzle in communication with the upper ink chamber formed on an upper surface of the metal layer, and a connection hole providing communication between the upper ink chamber and the lower ink chamber; a heater located between the upper ink chamber and the lower ink chamber for heating ink contained in the lower and upper ink chambers; and a conductor electrically connected to the heater to apply a current to the heater.

Abstract: A wafer level packaging cap for covering a device wafer with a device thereon and a fabrication method thereof are provided. The method includes operations of forming a plurality of connection grooves on a wafer, forming a seed layer on the connection grooves, forming connection parts by filling the connection grooves with a metal material, forming cap pads on a top surface of the wafer to be electrically connected to the connection parts, bonding a supporting film with the top surface of the wafer on which the cap pads are formed, forming a cavity on a bottom surface of the wafer to expose the connection parts through the cavity, and forming metal lines on the bottom surface of the wafer to be electrically connected to the connection parts.

Abstract: A micro package, a multi-stack micro package, and a manufacture method therefor are provided. A micro package according to the present invention includes a device substrate for mounting a devices, being a circuit module; a protection cap for protecting the device; bonding substances which, formed by patterning on predetermined areas on the device substrate, bond the device substrate and the protection cap; layers formed on a portion of the device substrate and a portion of the protection cap and exterior sides of the bonding substances; vias which are formed by etching away another portion of the protection cap, and electrically connected to an upper surface of the device substrate through the bonding substances; under barrier metals (UBMs) formed on the vias; and solder bumpers, being connection terminals for an external signal, formed on the UBMs.

Abstract: A tunable capacitor using an electrowetting phenomenon includes a first electrode; a second electrode which is spaced apart from the first electrode and faces the first electrode; a fluidic channel which is disposed between the first electrode and the second electrode; a first insulating layer which is disposed between the first electrode and the fluidic channel; and a conductive fluid which is disposed in the fluidic channel and moves along the fluidic channel when a direct current (DC) potential difference occurs between the first and second electrodes. Accordingly, it is possible to fabricate the tunable capacitor with the simplified fabrication process, good reliability and durability, and no restriction on the tuning range.

Abstract: A cap wafer, fabrication method, and a semiconductor chip are provided. The cap wafer includes a cap wafer substrate; a penetrated electrode formed to penetrate the cap wafer substrate; and an electrode pad connected with a lower portion of the penetrated electrode on a lower surface of the cap wafer substrate, wherein the penetrated electrode has an oblique section which gradually widens from an upper surface to the lower surface of the cap wafer substrate. The fabrication method includes forming an oblique-via hole on a lower surface of a cap wafer substrate, the oblique-via hole having an oblique section which gradually narrows in a direction moving away from the lower surface of the cap wafer substrate; and forming a penetrated electrode in the oblique-via hole. The semiconductor chip includes a base wafer; a cap wafer; a cavity; a penetrated electrode; and a pad bonding layer.

Abstract: A method of fabricating a backlight module in which at least one luminescence element is positioned, including: positioning a luminescence element in at least one cavity formed on a carrier; forming a lower electrode on a substrate; transferring the luminescence element positioned on the carrier to the substrate, connecting the luminescence element to a pattern of the lower electrode formed on the substrate, and removing the carrier; forming an insulating layer on a surface of the substrate to which the luminescence element is transferred, and exposing a top region of the luminescence element; and forming an upper electrode on the exposed top region of the luminescence element. Accordingly, the backlight module including very small luminescence elements being of a micro unit in size is easily fabricated.

Abstract: A micro package, a multi-stack micro package, and a manufacture method therefor are provided. A micro package according to the present invention includes a device substrate for mounting a devices, being a circuit module; a protection cap for protecting the device; bonding substances which, formed by patterning on predetermined areas on the device substrate, bond the device substrate and the protection cap; layers formed on a portion of the device substrate and a portion of the protection cap and exterior sides of the bonding substances; vias which are formed by etching away another portion of the protection cap, and electrically connected to an upper surface of the device substrate through the bonding substances; under barrier metals (UBMs) formed on the vias; and solder bumpers, being connection terminals for an external signal, formed on the UBMs.

Abstract: A micro package, a multi-stack micro package, and a manufacture method therefor are provided. A micro package according to the present invention includes a device substrate for mounting a devices, being a circuit module; a protection cap for protecting the device; bonding substances which, formed by patterning on predetermined areas on the device substrate, bond the device substrate and the protection cap; layers formed on a portion of the device substrate and a portion of the protection cap and exterior sides of the bonding substances; vias which are formed by etching away another portion of the protection cap, and electrically connected to an upper surface of the device substrate through the bonding substances; under barrier metals (UBMs) formed on the vias; and solder bumpers, being connection terminals for an external signal, formed on the UBMs.

Abstract: A thermally-driven ink-jet printhead includes a substrate having an ink chamber to be filled with ink to be ejected, a manifold for supplying ink, and an ink channel for providing flow communication therebetween. First and second sidewalls are formed to a predetermined depth from an upper surface of the substrate and define the ink chamber to have a substantially rectangular shape. A nozzle plate including a plurality of material layers is formed on the substrate. A nozzle passes through the nozzle plate and is in flow communication with the ink chamber. A heater is disposed between the nozzle and one of the first sidewalls above the ink chamber. A conductor is electrically connected to the heater. The conductor and the heater are disposed within the nozzle plate. A shifting feature moves cavitation points beyond an outer edge of the heater.

Abstract: A wafer level package for a surface acoustic wave (SAW) device and a fabrication method thereof. The SAW device wafer level package includes a SAW device in which a SAW element is formed on a top surface of a device wafer, a cap wafer which is bonded with a top surface of the SAW device and has a viahole penetrating the cap wafer, and a conductive member to fill a part of the viahole. The viahole has a first via portion and a second via portion, the first via portion has a gradually smaller diameter from a bottom surface of the cap wafer until a certain depth, and the second via portion has a gradually greater diameter from the first via portion until a top surface of the cap wafer.

Abstract: An apparatus and method for driving an ink-jet printhead in which current is applied to a heater to heat ink to be supplied in an ink chamber to generate a bubble to eject ink from the ink chamber, the apparatus including a circuit that alternately applies current to the heater to alternate a direction of current flowing through the heater.

Abstract: A wafer level package for a surface acoustic wave device and a fabrication method thereof include a SAW device formed with a SAW element on an upper surface of a device wafer; a cap wafer joined on an upper part of the SAW element; a cavity part housing the SAW element between the cap wafer and the SAW device; a cap pad formed on an upper surface of the cap wafer; and a metal line formed to penetrate through the cap wafer to electrically connect the cap pad and the SAW element, the device wafer and the cap wafer being made of the same materials.