Abstract: Tetradentate platinum and palladium complexes based on biscarbazole and analogues for full color displays and lighting applications.

Abstract: A fluid and power provision apparatus is provided. The apparatus includes a power provision device and a pump assembly. The pump assembly includes a motor, a transmission system, a piston assembly, and a collar assembly. The piston assembly includes a piston sleeve, a piston, and a piston arm operably coupled to the piston and the transmission system to transmit energy from the motor to articulate the piston within the piston sleeve. The collar assembly forms a collar plenum, a first flowpath, and a second flowpath. The piston sleeve extends at least in part into the collar plenum. The first flowpath extends in fluid communication from the collar plenum to a fluid supply outlet. The second flowpath extends in fluid communication from an interior of the apparatus to the first flowpath.

Abstract: A high-capacity battery comprises an enclosure, a group of battery cells arranged inside the enclosure, and cover plates arranged on two opposite sides of the enclosure. The cover plates serve as positive and negative poles of the battery. The group of battery cells are composed of a plurality of battery cells with similar performance, which are grouped by capacity, voltage, internal resistance, and self-discharge, etc., and connected in shunt, and all battery cells in the group share the same electrolyte system. The pole lugs of the group of battery cells are connected to the cover plates, and the cover plates are connected to the enclosure in an insulated and sealed manner.

Abstract: The disclosure is related to systems and methods for data detection and device optimization. In one example, a device may include an interface circuit for data transmission, and an interface detection module adapted to determine a characteristic of a data transfer over the interface circuit. The device may implement an optimization profile for the device based upon the determined characteristic. Further, a device may be configured to measure a data transfer rate, determine an interface type based on the data transfer rate, and implement an optimization profile based on the interface type. The optimization profile may optimize a system for power consumption, performance, or other benefits.

Abstract: The technology disclosed herein pertains to a system and method for managing write failures in a disc drive. Implementations disclosed herein provide a method including monitoring write fault events per sector for a storage device, in response to a write fault event, updating a write fault repeat count table, wherein the repeat count table tracks a number of write fault repeat counts per sector, comparing a write fault repeat count for a sector to a predetermined threshold write fault repeat count, and in response to determining that the write fault repeat count for a sector is above the predetermined threshold write fault repeat count, performing a write-reassign operation.

Abstract: A semiconductor structure is provided. The semiconductor structure includes: a base substrate having an opening; and a first gate layer formed in the opening. In the first gate layer closes a top of the opening and the first gate layer includes at least one void. The semiconductor structure further includes a second gate layer formed on the first gate layer. An atomic radius of the material of the second gate layer is smaller than gaps among atoms of the material of the first gate layer and the void is filled by atoms of one of the material of the first gate layer and the material of the second gate layer.

Abstract: Radiation detecting-structures and fabrications methods thereof are presented. The methods include, for instance: providing a substrate, the substrate including at least one trench extending into the substrate from an upper surface thereof; and epitaxially forming a radiation-responsive semiconductor material layer from one or more sidewalls of the at least one trench of the substrate, the radiation-responsive semiconductor material layer responding to incident radiation by generating charge carriers therein. In one embodiment, the sidewalls of the at least one trench of the substrate include a (111) surface of the substrate, which facilitates epitaxially forming the radiation-responsive semiconductor material layer. In another embodiment, the radiation-responsive semiconductor material layer includes hexagonal boron nitride, and the epitaxially forming includes providing the hexagonal boron nitride with an a-axis aligned parallel to the sidewalls of the trench.

Abstract: A method and apparatus for determining a trajectory of a robot's end effector are disclosed. In an embodiment, the apparatus includes a force obtaining device to obtain a collision force of the end effector of the robot, caused by a collision of the end effector upon the collision being detected; and a trajectory determining device to determine a second trajectory of the end effector based on the collision force of the end effector obtained, and based on a recorded first trajectory of the end effector. The recorded first trajectory is a trajectory recorded before the collision, and the second trajectory is a trajectory determined after the collision. As such, an efficient protection for the robot and its working environment at the moment of collision may be achieved.

Abstract: The technology disclosed herein pertains to a system and method for managing write failures in a disc drive. Implementations disclosed herein provide a method including monitoring write fault events per sector for a storage device, in response to a write fault event, updating a write fault repeat count table, wherein the repeat count table tracks a number of write fault repeat counts per sector, comparing a write fault repeat count for a sector to a predetermined threshold write fault repeat count, and in response to determining that the write fault repeat count for a sector is above the predetermined threshold write fault repeat count, performing a write-reassign operation.

Abstract: An adjacent track interference (ATI) metric is determined for each of a plurality of regions of a single surface of a magnetic disk. Based on the ATI metrics, each of the regions is assigned a region-specific directed offline scan (DOS) criterion, at least two of the DOS criteria being different from one another. Based on a write count of a track within one of the regions satisfying the associated region-specific DOS criterion, a DOS remediation of the track is performed.

Abstract: This utility model discloses a kind of outdoor furniture with a non-welded and quick-installed structure, including a furniture body, is characterized in that the connection of each pipe of the furniture body mentioned is realized through the interference fit between the fittings and adjacent pipes. The utility model eliminates the welding and polishing processes and simplifies the assembly process through the interference fit of the two-coupling, three-coupling and four-coupling fittings with pipes for the early stage brackets, greatly saving the labor cost and production cost.

Abstract: The technology disclosed herein pertains to a method for determining expected command completion time (CCT), the method including receiving a plurality of position error signals (PESs) for an HDD over a predetermined time period, determining sigma of the plurality of PESs, retrieving upper off-track limits (UOL) for one or more data sectors of the HDD, calculating average number of retrieved sectors (A) between two consecutive occurrences of the |PES|>UOL for the HDD, and determining required number of revolutions (CCT) to collect data based on the average number of retrieved data sectors (A) and a total number of requested data sectors (N).

Abstract: A semiconductor structure is provided. The semiconductor structure includes: a base substrate having an opening; and a first gate layer formed in the opening. In the first gate layer closes a top of the opening and the first gate layer includes at least one void. The semiconductor structure further includes a second gate layer formed on the first gate layer. An atomic radius of the material of the second gate layer is smaller than gaps among atoms of the material of the first gate layer and the void is filled by atoms of one of the material of the first gate layer and the material of the second gate layer.

Abstract: The technology disclosed herein pertains to a system and method for managing write failures in a disc drive. Implementations disclosed herein provide a method including monitoring write fault events per sector for a storage device, in response to a write fault event, updating a write fault repeat count table, wherein the repeat count table tracks a number of write fault repeat counts per sector, comparing a write fault repeat count for a sector to a predetermined threshold write fault repeat count, and in response to determining that the write fault repeat count for a sector is above the predetermined threshold write fault repeat count, performing a write-reassign operation.

Abstract: The technology disclosed herein pertains to a method for determining expected command completion time (CCT), the method including receiving a plurality of position error signals (PESs) for an HDD over a predetermined time period, determining sigma of the plurality of PESs, retrieving upper off-track limits (UOL) for one or more data sectors of the HDD, calculating average number of retrieved sectors (A) between two consecutive occurrences of the |PES|>UOL for the HDD, and determining required number of revolutions (CCT) to collect data based on the average number of retrieved data sectors (A) and a total number of requested data sectors (N).

Abstract: An adjacent track interference (ATI) metric is determined for each of a plurality of regions of a single surface of a magnetic disk. Based on the ATI metrics, each of the regions is assigned a region-specific directed offline scan (DOS) criterion, at least two of the DOS criteria being different from one another. Based on a write count of a track within one of the regions satisfying the associated region-specific DOS criterion, a DOS remediation of the track is performed.

Abstract: Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a base substrate having an opening and forming a first gate layer in the opening. The first gate layer closes a top of the opening and includes a void. The method also includes forming a second gate layer on the first gate layer. An atomic radius of a material of the second gate layer is smaller than gaps among the atoms of the material of the first gate layer. Further, the method includes performing a thermal annealing process to cause atoms of the material of the second layer to pass through the first gate layer to fill the void.

Abstract: A method includes moving data in a defect range from a defective area of a data storage medium to a reserve area of the data storage medium, and identifying the defect range by an address of a start of the defect range and a defect length. A logical address table is updated with the address of the start of the defect range, the defect length and an offset to the reserve area.

Abstract: The disclosed technology provides a method that improves CCT in SMR device systems. In one implementation, the method comprises writing data to a shingled magnetic recording (SMR) band in a storage device, determining whether an off-track write has occurred, identifying unsafe written data in response to determining that an off-track write has occurred, determining whether caching space is available upon identifying unsafe written data, continue writing data to the SMR band without a write retry upon determining that caching space is available, and writing unsafe written data to the available caching space. In another implementation, the method comprises receiving a request to repair an encroached track in an SMR band, recovering encroached data to a dynamic random-access memory, determining whether caching space is available, writing the recovered data to the available caching space upon determining that caching space is available, and merging other cached data in the SMR band.

Abstract: An apparatus includes a data storage medium having a plurality of tracks. The apparatus also includes a write history buffer configured to store a history of prior write commands to the plurality of tracks. The apparatus further includes a controller communicatively coupled to the write history buffer. The controller is configured to receive a new write command directed to a first portion of a first track of the plurality of tracks on the data storage medium. The controller is further configured to determine whether to update ATI contribution measures from the first track based on the history of write commands to the first track.